Focal depth distribution using sP depth phase and implications for plate coupling in the Hyuganada region, Japan

2006 ◽  
Vol 155 (3-4) ◽  
pp. 219-235 ◽  
Author(s):  
Michitaka Tahara ◽  
Hiroshi Shimizu ◽  
Masao Nakada ◽  
Yoshihiro Ito
Keyword(s):  
Depth Distribution ◽  
Focal Depth ◽  
Plate Coupling

Focal depth distribution of Swedish earthquakes

1979 ◽  
Vol 53 (1-2) ◽  
pp. T29-T32 ◽  
Author(s):  
Markus Båth
Keyword(s):  
Depth Distribution ◽  
Focal Depth

Focal depth distribution of the 1982 Miramichi earthquake sequence determined by modelling depth phases

2017 ◽  
Vol 54 (4) ◽  
pp. 359-369 ◽  
Author(s):  
Shutian Ma ◽  
Dariush Motazedian
Keyword(s):  
New Brunswick ◽  
New England ◽  
Rayleigh Waves ◽  
Depth Distribution ◽  
Body Wave ◽  
Focal Depth ◽  
Earthquake Sequence ◽  
Depth Range ◽  
Eastern Canada ◽  
Body Wave Magnitude

On 9 January 1982, in the Miramichi region of New Brunswick, Canada, an earthquake with body-wave magnitude (mb) 5.7 occurred, and extensive aftershocks followed. The mainshock was felt throughout Eastern Canada and New England, USA. The mainshock and several principal aftershocks were digitally recorded worldwide, but smaller aftershocks were digitally recorded only at regional stations. Digital stations were not yet popular in 1982; therefore, available regional digital waveform records for modelling are very limited. Fortunately, two Eastern Canada Telemetered Network (ECTN) stations, EBN and KLN, produced excellent waveform records for most of the aftershocks until their closure at the end of 1990. The waveform records can be retrieved from the archive database at the Geological Survey of Canada (GSC). Since EBN had clear sPmP records of the larger aftershocks (with magnitude mN ≥ 2.8), we were able to determine focal depths for these larger events. Most of the focal depth solutions for the 113 larger aftershocks were within a depth range of 3–6 km. The majority of the depths were at about 4.5 km. Some aftershocks had depths of about 1–2 km. The focal depth solutions for the shallow events were confirmed by the existence of prominent crustal Rayleigh waves. As the records for the foreshock and the mainshock at EBN were not available, we used the records at station LMN for the foreshock and a teleseismic depth phase for the mainshock. The teleseismic depth phase comparison shows that the mainshock and its three principal aftershocks migrated from a depth of about 7 km to near the Earth’s surface.

scholarly journals Seismicity Pattern Analysis in and around Shillong Great Earthquake of 1897

2015 ◽  
Vol 5 ◽  
pp. 36-38
Author(s):  
Ananta Panthi ◽  
Jyoti Bhattarai
Keyword(s):  
Depth Distribution ◽  
Focal Depth ◽  
Seismic Energy ◽  
Great Earthquake ◽  
Main Central Thrust ◽  
Seismicity Pattern ◽  
Main Boundary Thrust ◽  
Earthquake Frequency ◽  
Spatio Temporal ◽  
Occurrence Pattern

 The seismicity data of the last 50 years (1963-2012) of the region bounded by 89° - 93° E and 24° -28° N have been analyzed for understanding the seismic characteristics in and around Shillong great earthquake of 1897. The distribution of earthquakes for this period shows sporadic nature of seismic activity in the region. The study of earthquake frequency, the spatio-temporal patterns of seismicity, the focal depth distribution, and the energy release pattern during the period 1963-2012 considering the events with cut-off magnitude (mb ≥ 4.5) have revealed that the region is seismically active. It is observed that most of the seismicity over the Shillong region is associated with the Main Central Thrust, Main Boundary Thrust and Transverse faults. The earthquake occurrence pattern is non-uniform and mostly shallow and intermediate focus in nature. Further, it has been observed that there exists a non-uniform pattern of seismic energy release.The Himalayan Physics Year 5, Vol. 5, Kartik 2071 (Nov 2014)Page: 36-38 

scholarly journals Recent seismic status of Shillong Plateau, Northeast India

BIBECHANA ◽  
2012 ◽  
Vol 9 ◽  
pp. 59-62
Author(s):  
Ananta Panthi ◽  
HN Singh
Keyword(s):  
Temporal Pattern ◽  
Depth Distribution ◽  
Focal Depth ◽  
B Value ◽  
Northeast India ◽  
Great Earthquake ◽  
Shillong Plateau ◽  
Middle Portion ◽  
Strong Activity ◽  
Intermediate Depth

Seismic status of Shillong Plateau of Northeast India has been studied, considering spatial and temporal pattern of the region and using seismicity data for the period 1808-2008. Cutoff magnitude and b-value has been estimated using earthquake data for the period 1963-2008. Seismic activity is observed to be very feeble along the major faults of Shillong Plateau and strong activity is found to occur slightly away from these faults and confined within middle portion at two locations of the region. The temporal pattern shows that the region is due for great earthquake. Focal depth distribution of the events shows that all the events are intermediate depth (less than 70 km). DOI: http://dx.doi.org/10.3126/bibechana.v9i0.7175 BIBECHANA 9 (2013) 59-62

Applications of SIMS to electronic materials and devices

1992 ◽  
Vol 50 (2) ◽  
pp. 1682-1683
Author(s):  
S.F. Corcoran
Keyword(s):  
Depth Distribution ◽  
Secondary Ion Mass Spectrometry ◽  
Semiconductor Device ◽  
Electronic Materials ◽  
Profile Analysis ◽  
Semiconductor Industry ◽  
Small Diameter ◽  
Depth Resolution ◽  
Detection Sensitivity

Over the past decade secondary ion mass spectrometry (SIMS) has played an increasingly important role in the characterization of electronic materials and devices. The ability of SIMS to provide part per million detection sensitivity for most elements while maintaining excellent depth resolution has made this technique indispensable in the semiconductor industry. Today SIMS is used extensively in the characterization of dopant profiles, thin film analysis, and trace analysis in bulk materials. The SIMS technique also lends itself to 2-D and 3-D imaging via either the use of stigmatic ion optics or small diameter primary beams.By far the most common application of SIMS is the determination of the depth distribution of dopants (B, As, P) intentionally introduced into semiconductor materials via ion implantation or epitaxial growth. Such measurements are critical since the dopant concentration and depth distribution can seriously affect the performance of a semiconductor device. In a typical depth profile analysis, keV ion sputtering is used to remove successive layers the sample.

Fluorescence effects in quantitative microprobe analysis

1990 ◽  
Vol 48 (2) ◽  
pp. 188-189
Author(s):  
S.J.B. Reed
Keyword(s):  
Microprobe Analysis ◽  
Depth Distribution ◽  
Exciting Radiation ◽  
Primary Radiation ◽  
List Type ◽  
Type Number ◽  
Computing Power ◽  
X Ray ◽  
Fluorescent Radiation

Characteristic fluorescenceThe theory of characteristic fluorescence corrections was first developed by Castaing. The same approach, with an improved expression for the relative primary x-ray intensities of the exciting and excited elements, was used by Reed, who also introduced some simplifications, which may be summarized as follows (with reference to K-K fluorescence, i.e. K radiation of element ‘B’ exciting K radiation of ‘A’):1.The exciting radiation is assumed to be monochromatic, consisting of the Kα line only (neglecting the Kβ line).2.Various parameters are lumped together in a single tabulated function J(A), which is assumed to be independent of B.3.For calculating the absorption of the emerging fluorescent radiation, the depth distribution of the primary radiation B is represented by a simple exponential.These approximations may no longer be justifiable given the much greater computing power now available. For example, the contribution of the Kβ line can easily be calculated separately.

A New Numerical Model for Electron-Probe Analysis at High Depth Resolution

1996 ◽  
Vol 54 ◽  
pp. 490-491
Author(s):  
P.-F. Staub ◽  
C. Bonnelle ◽  
F. Vergand ◽  
P. Jonnard
Keyword(s):  
Electron Probe ◽  
Surface Segregation ◽  
Depth Distribution ◽  
Computing Time ◽  
Depth Resolution ◽  
Physical Parameters ◽  
Electron Probe Analysis ◽  
Interface Phases ◽  
Excitation Conditions ◽  
High Depth

Characterizing dimensionally and chemically nanometric structures such as surface segregation or interface phases can be performed efficiently using electron probe (EP) techniques at very low excitation conditions, i.e. using small incident energies (0.5<E0<5 keV) and low incident overvoltages (1<U0<1.7). In such extreme conditions, classical analytical EP models are generally pushed to their validity limits in terms of accuracy and physical consistency, and Monte-Carlo simulations are not convenient solutions as routine tools, because of their cost in computing time. In this context, we have developed an intermediate procedure, called IntriX, in which the ionization depth distributions Φ(ρz) are numerically reconstructed by integration of basic macroscopic physical parameters describing the electron beam/matter interaction, all of them being available under pre-established analytical forms. IntriX’s procedure consists in dividing the ionization depth distribution into three separate contributions:

AlCu Pattern Generation on 3D StructuredWafer Using Multi Level Exposure Method on Electrodeposited Polymer Material

2003 ◽  
Vol 766 ◽  
Author(s):  
Vineet Sharma ◽  
Arief B. Suriadi ◽  
Frank Berauer ◽  
Laurie S. Mittelstadt
Keyword(s):  
Line Width ◽  
Metal Film ◽  
Focal Depth ◽  
Cost Effective ◽  
Pattern Generation ◽  
Promising Technique ◽  
Critical Dimensions ◽  
Exposure Method ◽  
Multi Level ◽  
3D Surfaces

AbstractNormal photolithography tools have focal depth limitations and are unable to meet the expectations of high resolution photolithography on highly topographic structures. This paper shows a cost effective and promising technique of combining two different approaches to achieve critical dimensions of traces on slope pattern continuity on highly topographic structures. Electrophoretically deposited photoresist is used on 3-D structured wafers. This photoresist coating technique is fairly known in the MEMS industries to achieve uniform and conformal photoresist films on 3D surfaces. Multi step exposures are used to expose electrophoretically deposited photoresist. AlCu (Cu-0.5%), 0.47-0.53 μm thick metal film is deposited on 3D structured silicon substrate to plate photoresist. By combining these two novel methods, metal (AlCu) traces of 75 μm line width and 150 μm pitch (from top flat to down the slope) have been demonstrated on isotropically etched 350 μm deep trenches with 5-10% line width loss.

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