Surface atmospheric pressure excitation of the translational mode of the inner core

Synthesis of silicon carbide nanowires (SiC NWs) from an alumina doped silica-graphite rod is reported. The rod was gradually heated up to a growth temperature by passing current through it under constant flowing argon at atmospheric pressure. The as-grown layers, deposited on the rod surface were separated from the inner core and characterized using scanning electron microscopy, transmission electron microscopy, energy dispersive spectroscopy, selected area electron diffraction, X-ray diffraction and Raman spectroscopy. A non-uniform layer thickness of alumina coating on SiC NWs was clearly observed when the doping was increased from 1 to 2 and 3 wt.%.

Download Full-text

An Electron Microscopic Study of an Avian Reovirus that Causes Arthritis

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100065328 ◽

1971 ◽

Vol 29 ◽

pp. 254-255

Author(s):

E, R. Walker ◽

N. O. Olson ◽

M. H. Friedman

Keyword(s):

Electron Microscopy ◽

Viral Genome ◽

Inner Core ◽

Avian Reovirus ◽

Electron Microscopic ◽

Outer Coat ◽

Acid Type ◽

Chicken Eggs ◽

Icosahedral Particle ◽

Mature Virus

An unidentified virus, responsible for an arthritic-like condition in chickens was studied by electron microscopy and other methods of viral investigation. It was characterized in chorio-allantoic membrane (CAM) lesions of embryonating chicken eggs and in tissue culture as to: 1) particle size; 2) structure; 3) mode of replication in the cell; and 4) nucleic acid type.The inoculated virus, coated and uncoated, is first seen in lysosomal-like inclusions near the nucleus; the virions appear to be uncoated in these electron dense inclusions (Figure 1), Although transfer of the viral genome from these inclusions is not observable, replicating virus and mature virus crystals are seen in the cytoplasm subsequent to the uncoating of the virions.The crystals are formed in association with a mass of fibrils 50 to 80 angstroms in diameter and a ribosome-studded structure that appears to be granular endoplasmic reticulum adapted to virus replication (Figure 2). The mature virion (Figure 3) is an icosahedral particle approximately 75 millimicrons in diameter. The inner core is 45 millimicrons, the outer coat 15 millimicrons, and the virion has no envelope.

Download Full-text

A High-Voltage Terminal for a Field-Emission Gun

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s042482010009539x ◽

1972 ◽

Vol 30 ◽

pp. 428-429

Author(s):

N. F. Ziegler

Keyword(s):

Field Emission ◽

High Voltage ◽

Atmospheric Pressure ◽

Power Supplies ◽

High Coherence

A high-voltage terminal has been constructed for housing the various power supplies and metering circuits required by the field-emission gun (described elsewhere in these Proceedings) for the high-coherence microscope. The terminal is cylindrical in shape having a diameter of 14 inches and a length of 24 inches. It is completely enclosed by an aluminum housing filled with Freon-12 gas at essentially atmospheric pressure. The potential of the terminal relative to ground is, of course, equal to the accelerating potential of the microscope, which in the present case, is 150 kilovolts maximum.

Download Full-text

Electron microscope characterization of MOCVD-grown gap layers on Si

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100144991 ◽

1986 ◽

Vol 44 ◽

pp. 724-725

Author(s):

K.M. Jones ◽

M.M. Al-Jassim ◽

J.M. Olson

Keyword(s):

Atmospheric Pressure ◽

Vapour Deposition ◽

Chemical Vapour ◽

Organic Chemical ◽

Lattice Match ◽

Si Substrates ◽

Metal Organic ◽

Good Lattice ◽

Antiphase Domains

The epitaxial growth of III-V semiconductors on Si for integrated optoelectronic applications is currently of great interest. GaP, with a lattice constant close to that of Si, is an attractive buffer between Si and, for example, GaAsP. In spite of the good lattice match, the growth of device quality GaP on Si is not without difficulty. The formation of antiphase domains, the difficulty in cleaning the Si substrates prior to growth, and the poor layer morphology are some of the problems encountered. In this work, the structural perfection of GaP layers was investigated as a function of several process variables including growth rate and temperature, and Si substrate orientation. The GaP layers were grown in an atmospheric pressure metal organic chemical vapour deposition (MOCVD) system using trimethylgallium and phosphine in H2. The Si substrates orientations used were (100), 2° off (100) towards (110), (111) and (211).

Download Full-text

Microstructure and reactivity of small metal particles: The role of Ce additives

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100121995 ◽

1992 ◽

Vol 50 (1) ◽

pp. 318-319

Author(s):

L.D. Schmidt ◽

K. R. Krause ◽

J. M. Schwartz ◽

X. Chu

Keyword(s):

Atmospheric Pressure ◽

Noble Metals ◽

Mixed Oxides ◽

Catalytic Properties ◽

Chemical Shifts ◽

Catalytic Converter ◽

Structural Evolution ◽

Single Particles ◽

Small Metal Particles

The evolution of microstructures of 10- to 100-Å diameter particles of Rh and Pt on SiO2 and Al2O3 following treatment in reducing, oxidizing, and reacting conditions have been characterized by TEM. We are able to transfer particles repeatedly between microscope and a reactor furnace so that the structural evolution of single particles can be examined following treatments in gases at atmospheric pressure. We are especially interested in the role of Ce additives on noble metals such as Pt and Rh. These systems are crucial in the automotive catalytic converter, and rare earths can significantly modify catalytic properties in many reactions. In particular, we are concerned with the oxidation state of Ce and its role in formation of mixed oxides with metals or with the support. For this we employ EELS in TEM, a technique uniquely suited to detect chemical shifts with ∼30Å resolution.

Download Full-text