Modeling of silicon epitaxial growth with SiHCl3 in a CVD barrel reactor at atmospheric pressure

1999 ◽  
Vol 09 (PR8) ◽  
pp. Pr8-221-Pr8-228
Author(s):  
E. de Paola ◽  
P. Duverneuil ◽  
A. Langlais ◽  
M. Nguyen
Keyword(s):  
Epitaxial Growth ◽  
Atmospheric Pressure ◽  
Barrel Reactor

Nonlinear increase in silicon epitaxial growth rate in a SiHCl3H2 system under atmospheric pressure

1997 ◽  
Vol 182 (3-4) ◽  
pp. 352-362 ◽  
Author(s):  
Hitoshi Habuka ◽  
Masatake Katayama ◽  
Manabu Shimada ◽  
Kikuo Okuyama
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
Atmospheric Pressure ◽  
Nonlinear Increase

Epitaxial growth of 3C–SiC films on 4 in. diam (100) silicon wafers by atmospheric pressure chemical vapor deposition

1995 ◽  
Vol 78 (8) ◽  
pp. 5136-5138 ◽  
Author(s):  
Christian A. Zorman ◽  
Aaron J. Fleischman ◽  
Andrew S. Dewa ◽  
Mehran Mehregany ◽  
Chacko Jacob ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Silicon Wafers ◽  
Pressure Chemical ◽  
Sic Films

Epitaxial Growth of Zinc Oxide Whiskers by Chemical-Vapor Deposition under Atmospheric Pressure

1999 ◽  
Vol 38 (Part 2, No. 5B) ◽  
pp. L586-L589 ◽  
Author(s):  
Minoru Satoh ◽  
Norio Tanaka ◽  
Yoshikazu Ueda ◽  
Shigeo Ohshio ◽  
Hidetoshi Saitoh
Keyword(s):  
Zinc Oxide ◽  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor

In situ B-doped Si epitaxial growth at low temperatures by atmospheric-pressure plasma CVD

2008 ◽  
Vol 40 (6-7) ◽  
pp. 984-987 ◽  
Author(s):  
Y. Kirihata ◽  
T. Nomura ◽  
H. Ohmi ◽  
H. Kakiuchi ◽  
K. Yasutake
Keyword(s):  
Epitaxial Growth ◽  
Atmospheric Pressure ◽  
Low Temperatures ◽  
Atmospheric Pressure Plasma ◽  
Plasma Cvd ◽  
Pressure Plasma

Characteristics of in-situ phosphorus-doped silicon selective epitaxial growth at atmospheric pressure

2008 ◽  
Vol 310 (21) ◽  
pp. 4507-4510 ◽  
Author(s):  
Tetsuya Ikuta ◽  
Shigeru Fujita ◽  
Hayato Iwamoto ◽  
Shingo Kadomura ◽  
Takayoshi Shimura ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Atmospheric Pressure ◽  
Selective Epitaxial Growth ◽  
Doped Silicon ◽  
Phosphorus Doped

Model on transport phenomena and epitaxial growth of silicon thin film in SiHCl3H2 system under atmospheric pressure

1996 ◽  
Vol 169 (1) ◽  
pp. 61-72 ◽  
Author(s):  
Hitoshi Habuka ◽  
Takatoshi Nagoya ◽  
Masanori Mayusumi ◽  
Masatake Katayama ◽  
Manabu Shimada ◽  
...  
Keyword(s):  
Thin Film ◽  
Epitaxial Growth ◽  
Atmospheric Pressure ◽  
Transport Phenomena ◽  
Silicon Thin Film

Decomposition Mechanisms of Antimony Source Compounds for Organometallic Vapor-Phase Epitaxy

1990 ◽  
Vol 204 ◽  
Author(s):  
Cory A. Larsen ◽  
Robert W. Gedridge ◽  
Shin Hwa Li ◽  
Gerald B. Stringfellow
Keyword(s):  
Epitaxial Growth ◽  
Vapor Phase ◽  
Atmospheric Pressure ◽  
Organometallic Vapor Phase Epitaxy ◽  
Flow Tube ◽  
Methyl Vinyl ◽  
Pyrolysis Mechanism ◽  
Tube Reactor ◽  
Decomposition Mechanisms ◽  
Carrier Gases

ABSTRACTThe decompositions of tertiary stibines (R3Sb, R = methyl, vinyl, isopropyl) were studied in an atmospheric pressure flow tube reactor, using D2 and He as carrier gases. D2 was used to isotopically label the byproducts in order to elucidate the pyrolysis mechanism. The exhaust products were analyzed by a time-of-flight mass spectrometer. The decomposition of these tertiary stibines in the presence of group Ill precursors was studied in order to simulate the conditions of organometallic vapor phase epitaxial growth. A comparison between the pyrolysis temperatures, decomposition mechanisms, and surface area effects of these Sb source compounds is presented.

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