Contribution of weak localization, electron–electron interaction, and Zeeman spin-splitting effects in corrective term “mT1/2” of the metallic conductivity in n-type GaAs

2011 ◽  
Vol 406 (18) ◽  
pp. 3489-3492
Author(s):  
A. Sybous ◽  
A. El kaaouachi ◽  
N. Ait Ben Ameur ◽  
B. Capoen ◽  
J. Hemine ◽  
...  
Keyword(s):  
Weak Localization ◽  
Spin Splitting ◽  
Electron Interaction ◽  
Metallic Conductivity ◽  
Corrective Term

Electron weak localization and electron–electron interaction effects on magneto-conductivity in In–Ga–Zn oxide films

2014 ◽  
Vol 551 ◽  
pp. 195-199 ◽  
Author(s):  
Bunju Shinozaki ◽  
Kazuya Hidaka ◽  
Syouhei Ezaki ◽  
Kazumasa Makise ◽  
Takayuki Asano ◽  
...  
Keyword(s):  
Oxide Films ◽  
Weak Localization ◽  
Interaction Effects ◽  
Electron Interaction

Separating weak-localization and electron-electron-interaction contributions to the conductivity of carbon nanostructures

2007 ◽  
Vol 105 (1) ◽  
pp. 223-226 ◽  
Author(s):  
E. N. Tkachev ◽  
A. I. Romanenko ◽  
O. B. Anikeeva ◽  
T. I. Buryakov ◽  
V. E. Fedorov ◽  
...  
Keyword(s):  
Carbon Nanostructures ◽  
Weak Localization ◽  
Electron Interaction

Localization and Electron-Electron Interaction Effects in Platinum Silicide Thin Wires

1986 ◽  
Vol 76 ◽  
Author(s):  
S. Ishida ◽  
K. Murase ◽  
Y. Shimamoto ◽  
K. Ishibashi ◽  
K. Gamo ◽  
...  
Keyword(s):  
Ion Beam ◽  
Weak Localization ◽  
Impurity Scattering ◽  
Surface Region ◽  
Electron Interaction ◽  
Physical Parameters ◽  
Superconducting Transition ◽  
Platinum Silicide ◽  
Thin Wires ◽  
Scattering Time

ABSTRACTThe low-temperature magnetoresistance of PtSi thin wires of varying width, prepared with different mask elements (Cu and Ni) in the reactive ion beam etching, has been studied, to determine the width dependence of the physical parameters in the weak localization. A drastic decrease of the magnetic impurity scattering time τs and that of the superconducting transition temperature Tc have been found for the wires prepared by Ni mask with narrowing width, which suggests that the phase coherence of diffusing electrons responsible for the weak localization and the superconductivity are strongly affected by the presence of a small amount of Ni impurities recoil implanted into the surface region of the sidewalls of wires.

WEAK LOCALIZATION AND ELECTRON–ELECTRON INTERACTION EFFECTS IN THIN METAL WIRES AND FILMS

2010 ◽  
Vol 24 (12n13) ◽  
pp. 2053-2071
Author(s):  
N. Giordano
Keyword(s):  
Electrical Conduction ◽  
Low Temperatures ◽  
Experimental Studies ◽  
Weak Localization ◽  
Thin Metal ◽  
Electron Interaction ◽  
Length Scales ◽  
Disordered Metals ◽  
Experimental Findings ◽  
Metal Wires

A brief and selective review of experimental studies of electrical conduction in thin metal wires and films at low temperatures is given. This review will illustrate the importance of various length scales and of dimensionality in determining the properties disordered metals. A few intriguing and still unresolved experimental findings are also mentioned.

Electron-electron interaction, weak localization and spin valve effect in vertical-transport graphene devices

2014 ◽  
Vol 104 (15) ◽  
pp. 153114 ◽  
Author(s):  
Mingsheng Long ◽  
Youpin Gong ◽  
Xiangfei Wei ◽  
Chao Zhu ◽  
Jianbao Xu ◽  
...  
Keyword(s):  
Spin Valve ◽  
Weak Localization ◽  
Vertical Transport ◽  
Electron Interaction ◽  
Valve Effect ◽  
Graphene Devices

SPIN SPLITTING IN A TWO DIMENSIONAL ELECTRON SYSTEM DETERMINED BY NUCLEAR MAGNETIC RELAXATION AND MAGNETOTRANSPORT ACTIVATION MEASUREMENTS

1993 ◽  
Vol 07 (01n03) ◽  
pp. 474-479 ◽  
Author(s):  
A. BERG ◽  
D. WEISS ◽  
K. V. KLITZING ◽  
R. NÖTZEL
Keyword(s):  
Energy Transport ◽  
Lattice Relaxation ◽  
Electron System ◽  
Spin Lattice Relaxation ◽  
Spin Splitting ◽  
Electron Interaction ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Spin Lattice ◽  
Dimensional Electron System

The spin splitting observed in two-dimensional electron systems at high magnetic fields is not only determined by the single-electron Zeeman energy but also by many-particle effects. Electron-electron interaction results in an enhanced g-factor which can be described by the exchange part of the Coulomb interaction. Nuclear spin lattice relaxation experiments analysing the Overhauser Shift in Electron Spin Resonance (ESR) measurements reveal that the exchange term is dominant. The spin splitting is strongly dependent on magnetic field and temperature. Numerical simulations enable the quantitative determination of the exchange part of the spin split energy. Transport activation measurements verify that the exchange part is proportional to the spin polarization of the electrons.

Weak localization and electron-electron interaction in percolating nickel films

1997 ◽  
Vol 102 (1) ◽  
pp. 41-46 ◽  
Author(s):  
M Aprili ◽  
J Lesueur ◽  
L Dumoulin ◽  
P Nédellec
Keyword(s):  
Weak Localization ◽  
Electron Interaction ◽  
Nickel Films

Magnetoresistance of AlGaN/GaN High Electron Mobility Transistors on Silicon

2014 ◽  
Vol 778-780 ◽  
pp. 1180-1184
Author(s):  
Sebastian Roensch ◽  
Victor Sizov ◽  
Takuma Yagi ◽  
Saad Murad ◽  
Lars Groh ◽  
...  
Keyword(s):  
Quantum Correction ◽  
Weak Localization ◽  
High Electron Mobility Transistors ◽  
Electron Interaction ◽  
High Electron ◽  
Temperature Dependent ◽  
Electron Mobility Transistors ◽  
Shubnikov De Haas Oscillations ◽  
Dimensional Electron Gas

We present temperature dependent magnetoresistance measurements on the 2-dimensional electron gas of epitaxially grown AlGaN/GaN heterojunctions on silicon (Si). We report on the quantum correction to the classical conductance. In particular we found weak localization, electron-electron-interaction, and Shubnikov-de Haas oscillations. The results verify the high material quality of the investigated GaN on silicon.

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