Weak localization and electron-electron interaction in percolating nickel films

1997 ◽  
Vol 102 (1) ◽  
pp. 41-46 ◽  
Author(s):  
M Aprili ◽  
J Lesueur ◽  
L Dumoulin ◽  
P Nédellec
Keyword(s):  
Weak Localization ◽  
Electron Interaction ◽  
Nickel Films

Electron weak localization and electron–electron interaction effects on magneto-conductivity in In–Ga–Zn oxide films

2014 ◽  
Vol 551 ◽  
pp. 195-199 ◽  
Author(s):  
Bunju Shinozaki ◽  
Kazuya Hidaka ◽  
Syouhei Ezaki ◽  
Kazumasa Makise ◽  
Takayuki Asano ◽  
...  
Keyword(s):  
Oxide Films ◽  
Weak Localization ◽  
Interaction Effects ◽  
Electron Interaction

Separating weak-localization and electron-electron-interaction contributions to the conductivity of carbon nanostructures

2007 ◽  
Vol 105 (1) ◽  
pp. 223-226 ◽  
Author(s):  
E. N. Tkachev ◽  
A. I. Romanenko ◽  
O. B. Anikeeva ◽  
T. I. Buryakov ◽  
V. E. Fedorov ◽  
...  
Keyword(s):  
Carbon Nanostructures ◽  
Weak Localization ◽  
Electron Interaction

Localization and Electron-Electron Interaction Effects in Platinum Silicide Thin Wires

1986 ◽  
Vol 76 ◽  
Author(s):  
S. Ishida ◽  
K. Murase ◽  
Y. Shimamoto ◽  
K. Ishibashi ◽  
K. Gamo ◽  
...  
Keyword(s):  
Ion Beam ◽  
Weak Localization ◽  
Impurity Scattering ◽  
Surface Region ◽  
Electron Interaction ◽  
Physical Parameters ◽  
Superconducting Transition ◽  
Platinum Silicide ◽  
Thin Wires ◽  
Scattering Time

ABSTRACTThe low-temperature magnetoresistance of PtSi thin wires of varying width, prepared with different mask elements (Cu and Ni) in the reactive ion beam etching, has been studied, to determine the width dependence of the physical parameters in the weak localization. A drastic decrease of the magnetic impurity scattering time τs and that of the superconducting transition temperature Tc have been found for the wires prepared by Ni mask with narrowing width, which suggests that the phase coherence of diffusing electrons responsible for the weak localization and the superconductivity are strongly affected by the presence of a small amount of Ni impurities recoil implanted into the surface region of the sidewalls of wires.

WEAK LOCALIZATION AND ELECTRON–ELECTRON INTERACTION EFFECTS IN THIN METAL WIRES AND FILMS

2010 ◽  
Vol 24 (12n13) ◽  
pp. 2053-2071
Author(s):  
N. Giordano
Keyword(s):  
Electrical Conduction ◽  
Low Temperatures ◽  
Experimental Studies ◽  
Weak Localization ◽  
Thin Metal ◽  
Electron Interaction ◽  
Length Scales ◽  
Disordered Metals ◽  
Experimental Findings ◽  
Metal Wires

A brief and selective review of experimental studies of electrical conduction in thin metal wires and films at low temperatures is given. This review will illustrate the importance of various length scales and of dimensionality in determining the properties disordered metals. A few intriguing and still unresolved experimental findings are also mentioned.

Electron-electron interaction, weak localization and spin valve effect in vertical-transport graphene devices

2014 ◽  
Vol 104 (15) ◽  
pp. 153114 ◽  
Author(s):  
Mingsheng Long ◽  
Youpin Gong ◽  
Xiangfei Wei ◽  
Chao Zhu ◽  
Jianbao Xu ◽  
...  
Keyword(s):  
Spin Valve ◽  
Weak Localization ◽  
Vertical Transport ◽  
Electron Interaction ◽  
Valve Effect ◽  
Graphene Devices

Magnetoresistance of AlGaN/GaN High Electron Mobility Transistors on Silicon

2014 ◽  
Vol 778-780 ◽  
pp. 1180-1184
Author(s):  
Sebastian Roensch ◽  
Victor Sizov ◽  
Takuma Yagi ◽  
Saad Murad ◽  
Lars Groh ◽  
...  
Keyword(s):  
Quantum Correction ◽  
Weak Localization ◽  
High Electron Mobility Transistors ◽  
Electron Interaction ◽  
High Electron ◽  
Temperature Dependent ◽  
Electron Mobility Transistors ◽  
Shubnikov De Haas Oscillations ◽  
Dimensional Electron Gas

We present temperature dependent magnetoresistance measurements on the 2-dimensional electron gas of epitaxially grown AlGaN/GaN heterojunctions on silicon (Si). We report on the quantum correction to the classical conductance. In particular we found weak localization, electron-electron-interaction, and Shubnikov-de Haas oscillations. The results verify the high material quality of the investigated GaN on silicon.

1D AND 2D QUANTUM INTERFERENCE EFFECTS IN ELECTRON TRANSPORT IN Au FILM

2013 ◽  
Vol 27 (08) ◽  
pp. 1350026
Author(s):  
B. I. BELEVTSEV ◽  
E. Yu. BELIAYEV ◽  
Yu. A. KOLESNICHENKO
Keyword(s):  
Electron Transport ◽  
Quantum Interference ◽  
Weak Localization ◽  
Electron Interaction ◽  
Interference Effects ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
One Dimensional ◽  
Au Film ◽  
Nominal Thickness

We present transport properties of quench-condensed Au film with nominal thickness ≈3.56 nm and R□ ≈ 5 k Ω for T > 10 K. This film has weak nonmetallic temperature dependence of resistance with logarithmic behavior above 10 K and somewhat stronger dependence at low temperatures. Above 3 K only two-dimensional (2D) quantum interference effects in electron transport have been found; whereas, below 3 K both one-dimensional (1D) and 2D effects of weak localization (WL) and electron–electron interaction (EEI) can be distinguished. This reflects inhomogeneous structure of the film near the thickness-controlled metal-insulator transition (MIT).

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