The interface structure of high performance ZnO Schottky diodes

2012 ◽  
Vol 407 (15) ◽  
pp. 2867-2870 ◽  
Author(s):  
Edwin L.H. Mayes ◽  
James G. Partridge ◽  
Matthew R. Field ◽  
Dougal G. McCulloch ◽  
Steven M. Durbin ◽  
...  
Keyword(s):  
High Performance ◽  
Schottky Diodes ◽  
Interface Structure

scholarly journals Tracking structural evolution: operando regenerative CeOx/Bi interface structure for high-performance CO2 electroreduction

2020 ◽  
Author(s):  
Ruichao Pang ◽  
Pengfei Tian ◽  
Hongliang Jiang ◽  
Minghui Zhu ◽  
Xiaozhi Su ◽  
...  
Keyword(s):  
High Performance ◽  
Density Functional ◽  
Structural Evolution ◽  
Density Functional Theory Calculations ◽  
Active Phase ◽  
Interface Structure ◽  
Operating Conditions ◽  
Faradaic Efficiency ◽  
Co2 Electroreduction ◽  
Water Activation

Abstract Unveiling the structural evolution and working mechanism of catalysts under realistic operating conditions is crucial for the design of efficient electrocatalysts for CO2 electroreduction, yet remains highly challenging. Here, by virtue of operando structural measurements at multiscale levels, it is identified under CO2 electroreduction conditions that an as-prepared CeO2/BiOCl precatalyst gradually evolves into CeOx/Bi interface structure with enriched Ce3+ species, which serves as the real catalytically active phase. The derived CeOx/Bi interface structure compared to pure Bi counterpart delivers substantially enhanced performance with a formate Faradaic efficiency approaching 90% for 24 hours in a wide potential window. The formate Faradaic efficiency can be further increased by using isotope D2O instead of H2O. Density functional theory calculations suggest that the regenerative CeOx/Bi interfacial sites can not only promote water activation to increase local *H species for CO2 protonation appropriately, but also stabilize the key intermediate *OCHO in formate pathway.

scholarly journals High performance Schottky diodes based on indium-gallium-zinc-oxide

2016 ◽  
Vol 34 (4) ◽  
pp. 04C101 ◽  
Author(s):  
Jiawei Zhang ◽  
Qian Xin ◽  
Aimin Song
Keyword(s):  
Zinc Oxide ◽  
High Performance ◽  
Schottky Diodes ◽  
Indium Gallium Zinc Oxide ◽  
Indium Gallium

scholarly journals High performance InGaZnO-based Schottky diodes fabricated at room temperature

2016 ◽  
Vol 13 (7-9) ◽  
pp. 618-622 ◽  
Author(s):  
Linlong Yan ◽  
Qian Xin ◽  
Lulu Du ◽  
Jiawei Zhang ◽  
Yi Luo ◽  
...  
Keyword(s):  
High Performance ◽  
Room Temperature ◽  
Schottky Diodes

High-Performance AlGaN/GaN Schottky Diodes With an AlGaN/AlN Buffer Layer

2011 ◽  
Vol 32 (11) ◽  
pp. 1519-1521 ◽  
Author(s):  
Geng-Yen Lee ◽  
Hsueh-Hsing Liu ◽  
Jen-Inn Chyi
Keyword(s):  
Buffer Layer ◽  
High Performance ◽  
Schottky Diodes ◽  
Aln Buffer

Research of High Performance Concrete of C100

2013 ◽  
Vol 838-841 ◽  
pp. 170-174
Author(s):  
Guo Jun Wang
Keyword(s):  
Silicon Content ◽  
High Performance ◽  
High Performance Concrete ◽  
Concrete Strength ◽  
Interface Structure ◽  
Orthogonal Test ◽  
Cementitious Material ◽  
Point Of View ◽  
Aggregate Gradation ◽  
Interface Structures

The effect on concrete strength of various kinds factor was systematically studied by orthogonal test. The amount of cementitious material, slag content, silicon content, water cement ratio, aggregate gradation and other factors was consider. By adjusting the parameters of the experiment, the C100 concrete was preparation successfully, which has high stregth and pumping perfomance. The interface structure of the C100 concrete was analyzed by scanning electron microscope (SEM) and found that C100 has a better interface structures. The concrete is a system and his strength depends on the strength of the suitability of various materials, which is a new point of view was put forward.

Electrical Characterization of Ni-Silicide Schottky Contacts on SiC for High Performance Temperature Sensor

2015 ◽  
Vol 821-823 ◽  
pp. 436-439 ◽  
Author(s):  
Razvan Pascu ◽  
Gheorghe Pristavu ◽  
Gheorghe Brezeanu ◽  
Florin Draghici ◽  
Marian Badila ◽  
...  
Keyword(s):  
Barrier Height ◽  
Temperature Sensor ◽  
High Performance ◽  
Schottky Diodes ◽  
Schottky Contact ◽  
Electrical Characterization ◽  
Post Annealing ◽  
Schottky Device ◽  
Post Annealing Temperature

The electrical behavior and stability of a temperature sensor based on 4H-SiC Schottky diodes using Ni2Si as Schottky contact, are investigated. The ideality factor and the barrier height were found to be strongly dependent on the post-annealing temperature of the Ni contact (which lead to the formation of Ni2Si). A nearly ideal Schottky device, with the barrier height approaching the high value of1.7eV, and a slight temperature dependence, was obtained after an annealing atTA=800°C.This high barrier height proves that Ni2Si is suitable as Schottky contact for temperature sensors, able to reliably operate up to450°C. Sensor sensitivity levels between1.00mV/°Cand2.70 mV/°Chave been achieved.

scholarly journals High-Performance RF Balanced Microstrip Mixer Configuration for Cryogenic and Room Temperatures

Electronics ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 102
Author(s):  
Noy Citron ◽  
Eldad Holdengreber ◽  
Oz Sorkin ◽  
Shmuel E. Schacham ◽  
Eliyahu Farber
Keyword(s):  
High Performance ◽  
Schottky Diodes ◽  
Band Pass Filter ◽  
Pass Filter ◽  
Low Pass Filter ◽  
Noise Rejection ◽  
Low Pass ◽  
Hybrid Coupler ◽  
Band Pass ◽  
Simulation Results

A high-performance S-band down-conversion microstrip mixer, for operation from 77 K to 300 K, is described. The balanced mixer combines a 90 degree hybrid coupler, two Schottky diodes, a band pass filter, and a low pass filter. The coupler phase shift drastically improves noise rejection. The circuit was implemented according to the configuration obtained from extensive simulation results based on electromagnetic analysis. The experimental results agreed well with the simulation results, showing a maximum measured insertion loss of 0.4 dB at 2 GHz. The microstrip mixer can be easily adjusted to different frequency ranges, up to about 50 GHz, through the proper choice of microstrip configuration. This novel S-band cryogenic mixer, implemented without resorting to special components, shows a very high performance at liquid nitrogen temperatures, making this mixer very suitable for high-temperature superconductive applications, such as front-ends.

scholarly journals Electronic structure and thermal conductance of the MASnI3/Bi2Te3 interface: a first-principles study

2022 ◽  
Vol 12 (1) ◽  
Author(s):  
Masayuki Morimoto ◽  
Shoya Kawano ◽  
Shotaro Miyamoto ◽  
Koji Miyazaki ◽  
Shuzi Hayase ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Composite Material ◽  
First Principles ◽  
High Performance ◽  
Thermal Conductance ◽  
Electronic States ◽  
Interface Structure ◽  
First Principles Calculations ◽  
Interfacial Thermal Conductance ◽  
Interface Structures

AbstractTo develop high-performance thermoelectric devices that can be created using printing technology, the interface of a composite material composed of MASnI3 and Bi2Te3, which individually show excellent thermoelectric performance, was studied based on first-principles calculations. The structural stability, electronic state, and interfacial thermal conductance of the interface between Bi2Te3 and MASnI3 were evaluated. Among the interface structure models, we found stable interface structures and revealed their specific electronic states. Around the Fermi energy, the interface structures with TeII and Bi terminations exhibited interface levels attributed to the overlapping electron densities for Bi2Te3 and MASnI3 at the interface. Calculation of the interfacial thermal conductance using the diffuse mismatch model suggested that construction of the interface between Bi2Te3 and MASnI3 could reduce the thermal conductivity. The obtained value was similar to the experimental value for the inorganic/organic interface.

Arrayed silk fibroin for high-performance Li metal batteries and atomic interface structure revealed by cryo-TEM

2020 ◽  
Vol 8 (48) ◽  
pp. 26045-26054 ◽  
Author(s):  
Baolin Zhang ◽  
Haodong Shi ◽  
Zhijin Ju ◽  
Kai Huang ◽  
Cheng Lian ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Silk Fibroin ◽  
Layered Structure ◽  
High Performance ◽  
Interface Structure ◽  
Atomic Interface

An upright silk fibroin/lithium foil alternating array is fabricated to facilitate an unexpected SEI with a robust layered structure of lithium deposited on the anode (revealed by cryogenic electron microscopy), thus significantly suppressing dendrites.

Correlation between barrier height and interface structure of Ag/Si(111) Schottky diodes

1994 ◽  
pp. 21-25
Author(s):  
R.F. Schmitsdorf ◽  
T.U. Kampen ◽  
W. Mönch
Keyword(s):  
Barrier Height ◽  
Schottky Diodes ◽  
Interface Structure
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