Determination of number and diameter of superheated droplets in bubble detectors (BD) of Type T-12 by irradiation with high energy heavy ions 56Fe, 84Kr and 132Xe at accelerator

Plasmas with solid-state density at temperatures of a few eV will be produced in the near future at GSI by high-energy heavy ions. To diagnose these plasmas, novel methods–based on hard X-ray diagnostics–have to be applied. An investigation of the hydrodynamic expansion of the target requires a space- and time-resolved measurement of the plasma density. The determination of the target density independently of its temperature is obtained by a special X-ray pinhole camera enabling a selective registration of the target K-shell emission in combination with space- and time-resolved beam intensity measurements.

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Determination of concentration profiles by elastic recoil detection with a ΔE−E gas telescope and high energy incident heavy ions

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/0168-583x(89)90426-6 ◽

1989 ◽

Vol 44 (2) ◽

pp. 184-194 ◽

Cited By ~ 87

Author(s):

J.P. Stoquert ◽

G. Guillaume ◽

M. Hage-Ali ◽

J.J. Grob ◽

C. Ganter ◽

...

Keyword(s):

Heavy Ions ◽

High Energy ◽

Concentration Profiles ◽

Elastic Recoil ◽

Elastic Recoil Detection ◽

Energy Incident

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Kinematic Approximations in TED and RHEED Analysis of Reconstructed Surfaces

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100135587 ◽

1990 ◽

Vol 48 (2) ◽

pp. 396-397

Author(s):

L. -M. Peng ◽

M. J. Whelan

Keyword(s):

Electron Diffraction ◽

Kinematic Analysis ◽

Incident Beam ◽

High Energy ◽

Energy Electron ◽

Great Success ◽

High Energy Electron ◽

Kinematic Approximation ◽

Reconstructed Surfaces

In recent years there has been a trend in the structure determination of reconstructed surfaces to use high energy electron diffraction techniques, and to employ a kinematic approximation in analyzing the intensities of surface superlattice reflections. Experimentally this is motivated by the great success of the determination of the dimer adatom stacking fault (DAS) structure of the Si(111) 7 × 7 reconstructed surface.While in the case of transmission electron diffraction (TED) the validity of the kinematic approximation has been examined by using multislice calculations for Si and certain incident beam directions, far less has been done in the reflection high energy electron diffraction (RHEED) case. In this paper we aim to provide a thorough Bloch wave analysis of the various diffraction processes involved, and to set criteria on the validity for the kinematic analysis of the intensities of the surface superlattice reflections.The validity of the kinematic analysis, being common to both the TED and RHEED case, relies primarily on two underlying observations, namely (l)the surface superlattice scattering in the selvedge is kinematically dominating, and (2)the superlattice diffracted beams are uncoupled from the fundamental diffracted beams within the bulk.

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Thermal Dynamic Behavior in Bi-Zone Habitable Cell with and without Phase Change Materials

Proceedings ◽

10.3390/proceedings2020063041 ◽

2020 ◽

Vol 63 (1) ◽

pp. 41

Author(s):

Hanae El Fakiri ◽

Lahoucine Ouhsaine ◽

Abdelmajid El Bouardi

Keyword(s):

Thermal Behavior ◽

Thermal Comfort ◽

Phase Change ◽

Dynamic Behavior ◽

Phase Change Materials ◽

Energy Performance ◽

High Energy ◽

Water Heater ◽

Simplified Modeling

The thermal dynamic behavior of buildings represents an important aspect of the energy efficiency and thermal comfort of the indoor environment. For this, phase change material (PCM) wallboards integrated into building envelopes play an important role in stabilizing the temperature of the human comfort condition. This article provides an assessment of the thermal behavior of a “bi-zone” building cell, which was built based on high-energy performance (HEP) standards and heated by a solar water heater system through a hydronic circuit. The current study is based on studying the dynamic thermal behavior, with and without implantation of PCMs on envelope structure, using a simplified modeling approach. The evolution of the average air temperature was first evaluated as a major indicator of thermal comfort. Then, an evaluation of the thermal behavior’s dynamic profile was carried out in this study, which allowed for the determination of the PCM rate anticipation in the thermal comfort of the building cell.

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Irradiation Induced Changes in Semiconducting Thin Films

Defect and Diffusion Forum ◽

10.4028/www.scientific.net/ddf.341.181 ◽

2013 ◽

Vol 341 ◽

pp. 181-210 ◽

Cited By ~ 1

Author(s):

S.K. Tripathi

Keyword(s):

Thin Films ◽

Solar Cells ◽

Heavy Ions ◽

Semiconductor Device ◽

High Energy ◽

Device Fabrication ◽

Electrical Performance ◽

Radiation Environment ◽

Extended Defects ◽

Semiconducting Thin Films

High-energy electron, proton, neutron, photon and ion irradiation of semiconductor diodes and solar cells has long been a topic of considerable interest in the field of semiconductor device fabrication. The inevitable damage production during the process of irradiation is used to study and engineer the defects in semiconductors. In a strong radiation environment in space, the electrical performance of solar cells is degraded due to direct exposure to energetically charged particles. A considerable amount of work has been reported on the study of radiation damage in various solar cell materials and devices in the recent past. In most cases, high-energy heavy ions damage the material by producing a large amount of extended defects, but high-energy light ions are suitable for producing and modifying the intrinsic point defects. The defects can play a variety of electronically active roles that affect the electrical, structural and optical properties of a semiconductor. This review article aims to present an overview of the advancement of research in the modification of glassy semiconducting thin films using different types of radiations (light, proton and swift heavy ions). The work which has been done in our laboratory related to irradiation induced effects in semiconducting thin films will also be compared with the existing literature.

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