Impact of electron-beam irradiation combined with shellac coating on the suppression of chlorophyll degradation and water loss of lime fruit during storage

2021 ◽  
Vol 172 ◽  
pp. 111364
Author(s):  
Ratchagon Pongsri ◽  
Sukanya Aiamla-or ◽  
Varit Srilaong ◽  
Apiradee Uthairatanakij ◽  
Pongphen Jitareerat
2021 ◽  
Vol 64 (1) ◽  
Author(s):  
Truc Trung Nguyen ◽  
Apiradee Uthairatanakij ◽  
Varit Srilaong ◽  
Natta Laohakunjit ◽  
Masaya Kato ◽  
...  

AbstractAt the present, the mechanism of chlorophyll degradation in response to ionizing irradiation in harvested fruits have not been examined. To understand the effect of electron beam (E-beam) irradiation on the chlorophyll degrading pathway in relation to chlorophyll degrading enzymes activity, reactive oxygen species (ROS) and antioxidant capacities of harvested mangoes stored at 13 °C for 16 days were studied. E-beam-treated fruit significantly suppressed the activities of chlorophyll degrading enzymes especially pheophytinase (PPH) and chlorophyll degrading peroxidase (Chl-POX) in the late stage of storage. This resulted in the chlorophyll content being maintained. However, E-beam irradiation did not affect the activities of chlorophyllase (Chlase) and magnesium de-chelatase (MD). The respiration rate, ethylene production, ROS accumulation (hydrogen peroxide [H2O2] and superoxide radical [O−.2]) immediately increased after E-beam treatment, following which they significantly decreased in comparison to the control. E-beam treatment enhanced the fruit’s antioxidant capacity by activating the activities of catalase (CAT) and ascorbate peroxidase (APX) and glutathione (GSH) content, and inactivated the activity of superoxide dismutase (SOD). Further, it did not affect the activity of glutathione reductase (GR) and glutathione disulfide (GSSG), vitamin C content, or total phenolic content. These results imply that E-beam treatment has the potential to delay chlorophyll degradation by suppressing the Chl-POX and PPH activities as well as reduce ROS production via CAT, APX, and SOD activities and GSH content.


Author(s):  
B. L. Armbruster ◽  
B. Kraus ◽  
M. Pan

One goal in electron microscopy of biological specimens is to improve the quality of data to equal the resolution capabilities of modem transmission electron microscopes. Radiation damage and beam- induced movement caused by charging of the sample, low image contrast at high resolution, and sensitivity to external vibration and drift in side entry specimen holders limit the effective resolution one can achieve. Several methods have been developed to address these limitations: cryomethods are widely employed to preserve and stabilize specimens against some of the adverse effects of the vacuum and electron beam irradiation, spot-scan imaging reduces charging and associated beam-induced movement, and energy-filtered imaging removes the “fog” caused by inelastic scattering of electrons which is particularly pronounced in thick specimens.Although most cryoholders can easily achieve a 3.4Å resolution specification, information perpendicular to the goniometer axis may be degraded due to vibration. Absolute drift after mechanical and thermal equilibration as well as drift after movement of a holder may cause loss of resolution in any direction.


Author(s):  
Wei-Chih Wang ◽  
Jian-Shing Luo

Abstract In this paper, we revealed p+/n-well and n+/p-well junction characteristic changes caused by electron beam (EB) irradiation. Most importantly, we found a device contact side junction characteristic is relatively sensitive to EB irradiation than its whole device characteristic; an order of magnitude excess current appears at low forward bias region after 1kV EB acceleration voltage irradiation (Vacc). Furthermore, these changes were well interpreted by our Monte Carlo simulation results, the Shockley-Read Hall (SRH) model and the Generation-Recombination (G-R) center trap theory. In addition, four essential examining items were suggested and proposed for EB irradiation damage origins investigation and evaluation. Finally, by taking advantage of the excess current phenomenon, a scanning electron microscope (SEM) passive voltage contrast (PVC) fault localization application at n-FET region was also demonstrated.


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