Information Safety Process Development According to ISО 27001 for an Industrial Enterprise

This article is devoted to substantiation of basic algorithms for the information system which could provide prompt making of decisions on ensuring safety of underground mining jobs, which are of great importance for the job safety at the mining enterprises. The information safety system architecture and some basic algorithms was developed. The system differs by its methods for prompt predicting and assessing of different scenarios of geomechanical process development, and which includes the following subsystems: a basic client-server subsystem with functions of interaction between the personnel and management of the enterprise; a reference and information subsystem, which supports a decision making process, accumulates data and analyzes technical documentation; a subsystem for analyzing the job safety by geomechanical factors and for assessing of the “support-rocks” system state basing on the risk criteria and mathematical fuzzy logics. Two integral indicators of safety are formed. The first indicator is used to control entering of the control object to the emergency mode and to determine a factor, which requires urgent interruption, and the second indicator is used for the total assessment of the object current state.

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Advanced TEM sample preparation techniques for submicron Si devices

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100138956 ◽

1995 ◽

Vol 53 ◽

pp. 516-517 ◽

Cited By ~ 1

Author(s):

P. B. Basham ◽

H. L. Tsai

Keyword(s):

Sample Preparation ◽

Process Development ◽

Light Transmission ◽

Specific Area ◽

Turnaround Time ◽

Small Hole ◽

Area Of Interest ◽

Transmission Electron ◽

Polished Side ◽

Preparation Techniques

The use of transmission electron microscopy (TEM) to support process development of advanced microelectronic devices is often challenged by a large amount of samples submitted from wafer fabrication areas and specific-spot analysis. Improving the TEM sample preparation techniques for a fast turnaround time is critical in order to provide a timely support for customers and improve the utilization of TEM. For the specific-area sample preparation, a technique which can be easily prepared with the least amount of effort is preferred. For these reasons, we have developed several techniques which have greatly facilitated the TEM sample preparation.For specific-area analysis, the use of a copper grid with a small hole is found to be very useful. With this small-hole grid technique, TEM sample preparation can be proceeded by well-established conventional methods. The sample is first polished to the area of interest, which is then carefully positioned inside the hole. This polished side is placed against the grid by epoxy Fig. 1 is an optical image of a TEM cross-section after dimpling to light transmission.

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The Structure and Properties of MoSi2 Thin Film in Mos Process

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s1431927600001379 ◽

1980 ◽

Vol 38 ◽

pp. 326-327

Author(s):

C.K. Wu ◽

P. Chang ◽

N. Godinho

Keyword(s):

Thin Film ◽

Integrated Circuits ◽

High Performance ◽

Large Scale ◽

Process Development ◽

Structure And Properties ◽

Metal Silicides ◽

High Oxidation ◽

Important Approach ◽

High Oxidation Resistance

Recently, the use of refractory metal silicides as low resistivity, high temperature and high oxidation resistance gate materials in large scale integrated circuits (LSI) has become an important approach in advanced MOS process development (1). This research is a systematic study on the structure and properties of molybdenum silicide thin film and its applicability to high performance LSI fabrication.

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