Raman and X-ray photoelectron spectroscopic investigation of solution processed Alq3/ZnO hybrid thin films

Author(s):  
Gnyaneshwar Dasi ◽  
Thyda Lavanya ◽  
S. Suneetha ◽  
S. Vijayakumar ◽  
Jae-Jin Shim ◽  
...  
2021 ◽  
Vol 26 ◽  
pp. 102162
Author(s):  
Refik Arat ◽  
Guobin Jia ◽  
Jan Dellith ◽  
Andrea Dellith ◽  
Jonathan Plentz

2015 ◽  
Vol 1131 ◽  
pp. 35-38
Author(s):  
Navaphun Kayunkid ◽  
Annop Chanhom ◽  
Chaloempol Saributr ◽  
Adirek Rangkasikorn ◽  
Jiti Nukeaw

This research is related to growth and characterizations of indium-doped pentacene thin films as a novel hybrid material. Doped films were prepared by thermal co-evaporation under high vacuum. The doping concentration was varied from 0% to 50% by controlling the different deposition rate between these two materials while the total thickness was fixed at 100 nm. The hybrid thin films were characterized by atomic force microscopy (AFM), X-ray diffraction (XRD) and UV-Visible spectroscopy to reveal the physical and optical properties. Moreover, the electrical properties of ITO/indium-doped-pentacene/Al devices i.e. charge mobility and carrier concentration were determined by considering the relationship between current-voltage and capacitance-voltage. AFM results identify that doping of indium into pentacene has an effect on surface properties of doped films i.e. the increase of surface grain size. XRD results indicate that doping of metal into pentacene has an effect on preferential orientation of pentacene’s crystalline domains. UV-Vis spectroscopy results show evolution of absorbance at photon energy higher than 2.7 eV corresponding to absorption from oxide of indium formed in the films. Electrical measurements exhibit higher conductivity in doped films resulting from increment of both charge carrier mobility and carrier concentration. Furthermore, chemical interactions taken place inside the doped films were investigated by x-ray photoelectron spectroscopy (XPS) in order to complete the remaining questions i.e. how do indium atoms interact with the neighbor molecules?, what is the origin of the absorption at E > 2.7 eV? Further results and discussions will be presented in the publication.


2020 ◽  
Vol 710 ◽  
pp. 138265 ◽  
Author(s):  
Gnyaneshwar Dasi ◽  
R. Ramarajan ◽  
D. Paul Joseph ◽  
S. Vijayakumar ◽  
Jae-Jin Shim ◽  
...  

Crystals ◽  
2011 ◽  
Vol 1 (3) ◽  
pp. 112-119 ◽  
Author(s):  
Lulu Deng ◽  
Kewei Wang ◽  
Cindy X. Zhao ◽  
Han Yan ◽  
James F. Britten ◽  
...  

2011 ◽  
Vol 1292 ◽  
Author(s):  
Yan Wu ◽  
Yiqiang Zhan ◽  
Mats Fahlman ◽  
Mei Fang ◽  
K. V. Rao ◽  
...  

ABSTRACTWe report on ‘in-situ’ solution processed homogeneous (200) oriented MgO ~85nm thin films deposited on Si substrates by inkjet printing. These films are found to show ferromagnetic order beyond room temperature with a saturation magnetization MS as high as ~0.63 emu/g. X-ray photoelectron spectroscopy investigations show the absence of any possible contamination effects, while the Mg 2p, and O 1s spectra indicate that the role of defect structure at the Mg site is important in the observed magnetism. By controlling the pH values of the precursors the concentration of the defects can be varied and hence tune the magnetization at room temperature. The origin of magnetism in these MgO thin films appears to arise from the cation vacancies.


MRS Advances ◽  
2018 ◽  
Vol 3 (5) ◽  
pp. 269-275 ◽  
Author(s):  
Rajinder Singh Deol ◽  
Meenal Mehra ◽  
Bhaskar Mitra ◽  
Madhusudan Singh

ABSTRACTSputtered lead-free piezoelectric materials like potassium sodium niobate (K1-xNaxNbO3 or KNN) have received significant technological interest in recent years in light of several reports of piezoelectric constants comparable to lead zirconium titanate (PZT). Potential applications include self-powered sensors, actuators, and low acoustic impedance transducers. For large area printed applications, it is vital to develop low-temperature solution processed deposition methods. In this work, sol-gel synthesis of K-rich (70:30) KNN was carried out under an argon atmosphere, using acetate precursors, followed by precipitation of white KNN powder upon careful drying. Powder X-ray diffraction (XRD) scans of the product with a Cu Kα source after calcination revealed a dominant (110) peak, accompanied by smaller (100) and (010) peaks, in agreement with published standard KNN data. The composition of K-rich phase was confirmed using energy dispersive X-ray spectroscopy (EDX). To produce thin films, the sol was spin coated on a surface-treated Au-coated Si substrate, followed by slow annealing to obtain low surface roughness films (RMS roughness ﹤∼10 nm) of thickness ∼200 nm after solvent removal. Atomic force microscopy (AFM) scans revealed an unremarkable amorphous film. However, deposition of the sol on the Au-coated backside of Si wafer under similar processing conditions revealed limited polycrystalline film formation observed using optical profilometry. Thin film XRD measurements of the deposited film reveal orthorhombic phase growth of KNN, though the unannealed film was more amorphous than the calcined KNN film. Preliminary piezoresponse force microscopy (PFM) scans were used to estimate a piezoelectric constant (d33) ∼ 2.7 pC/N, consistent with the general expectation of lower piezoelectric constants for thin sol-gel films. The highest processing temperature used at any step during the deposition process was 90°C, consistent with the applications involving flexible polyimide substrates. This low-temperature thin-film growth suggests a potential route towards integration of large area piezoelectric generators for environmentally-friendly autonomous flexible sensor applications, with better control of phase and composition during the solution-phase deposition of KNN.


2015 ◽  
Vol 54 (3) ◽  
pp. 033002 ◽  
Author(s):  
Yin-Chih Lin ◽  
Jhen-Yong Hong ◽  
Chia-Nan Yen ◽  
Shi-Yuan Tong ◽  
Mean-Jue Tung ◽  
...  

2015 ◽  
Vol 3 (29) ◽  
pp. 7604-7611 ◽  
Author(s):  
E. Mitraka ◽  
L. Kergoat ◽  
Z. U. Khan ◽  
S. Fabiano ◽  
O. Douhéret ◽  
...  

Liquid-metal droplets dispersed in a conducting polymer matrix is a material concept for printable electrochemical pH-threshold indicators.


Author(s):  
R. M. Anderson

Aluminum-copper-silicon thin films have been considered as an interconnection metallurgy for integrated circuit applications. Various schemes have been proposed to incorporate small percent-ages of silicon into films that typically contain two to five percent copper. We undertook a study of the total effect of silicon on the aluminum copper film as revealed by transmission electron microscopy, scanning electron microscopy, x-ray diffraction and ion microprobe techniques as a function of the various deposition methods.X-ray investigations noted a change in solid solution concentration as a function of Si content before and after heat-treatment. The amount of solid solution in the Al increased with heat-treatment for films with ≥2% silicon and decreased for films <2% silicon.


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