Recovery of silicon carbide and synthesis of silica materials from silicon ingot cutting fluid waste

Silicon carbide (SiC) is widely employed as an abrasive material in aqueous media for sawing silicon ingot into individual wafers in photovoltaic industry. After a series of cutting, grinding and polishing operation, a mixture of substances (Cutting fluid, SiC, Si and small amount of magnetic metal) is produced as a form of slurry. The used SiC can be preferably recovered and reused for another application, rather than disposed of as waste. In this study, a pilot scale system (25 kg/h) is developed to extract SiC from photovoltaic industry abrasive slurry. The recovery system is composed of physical and chemical separation processes to remove silicon particles and magnetic materials which are dispersed in the slurry. X-ray diffraction analysis showed that purified powder is in the 6H-SiC structure and powder consists only of silicon carbide and has no residual silicon. It might be applied again in silicon ingot cutting or for other purposes which require this kind of ceramic material.

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Study on nano silicon carbide water-based cutting fluid in polysilicon cutting

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2020.105512 ◽

2021 ◽

Vol 123 ◽

pp. 105512

Author(s):

Chunyan Yao ◽

Dongdong Chen ◽

Kaixiang Xu ◽

Zhongli Zheng ◽

Qiangsheng Wang ◽

...

Keyword(s):

Silicon Carbide ◽

Cutting Fluid ◽

Water Based ◽

Nano Silicon

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Silicon Carbide Recovery from Cutting Fluid Waste: Evolution of Recycling Performance for Valorization with Higher Added Value

Silicon ◽

10.1007/s12633-021-01169-2 ◽

2021 ◽

Author(s):

M. Hecini ◽

S. Beddek ◽

M. Tablaoui ◽

Y. Ayoucha ◽

B. Palahouane ◽

...

Keyword(s):

Silicon Carbide ◽

Added Value ◽

Cutting Fluid

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Three Output Membrane Hydrocyclone: Classification and Filtration

Molecules ◽

10.3390/molecules24061116 ◽

2019 ◽

Vol 24 (6) ◽

pp. 1116 ◽

Cited By ~ 2

Author(s):

Jhao-Yi Lin ◽

Rome-Ming Wu

Keyword(s):

Silicon Carbide ◽

Polyethylene Glycol ◽

Solar Energy ◽

Organic Solvent ◽

Experimental Verification ◽

Ceramic Membrane ◽

Cutting Fluid ◽

Traditional System ◽

Energy Processes ◽

Tubular Membranes

In this study, through simulation and experimental verification, we proposed a novel hydrocyclone in which a tubular ceramic membrane passed through the overflow outlet to the underflow outlet. The centers of overflow and underflow outlets were tubular membranes equipped with an exit of outside-in filtration, and the overflow the underflow outlets were shaped into annular (donut shape) exits. Thus, this novel hydrocyclone has three outlets, namely the overflow dilute liquid, the underflow concentrated liquid, and clear filtrate. This system enabled higher dilution of hydrocyclone overflow concentration than that in the traditional system. Furthermore, underflow was more concentrated, and we obtained a clear filtrate. Therefore, this device can simultaneously perform classification and filtration, which is valuable for special liquid recycling. For instance, in wafer cutting fluid recovery in solar energy processes, the fluid with more silicon can function as the overflow, the fluid with more silicon carbide can function as the underflow, and the polyethylene glycol (PEG) organic solvent can function as the clear filtrate.

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Irradiation behavior of pyrolytic silicon carbide

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100074288 ◽

1983 ◽

Vol 41 ◽

pp. 72-73

Author(s):

R. J. Lauf

Keyword(s):

Silicon Carbide ◽

Fission Products ◽

Thermodynamics And Kinetics ◽

Neutron Fluences ◽

Fuel Particles ◽

Sic Coatings ◽

Irradiation Behavior ◽

Kinetics Of ◽

Htgr Fuel

Fuel particles for the High-Temperature Gas-Cooled Reactor (HTGR) contain a layer of pyrolytic silicon carbide to act as a miniature pressure vessel and primary fission product barrier. Optimization of the SiC with respect to fuel performance involves four areas of study: (a) characterization of as-deposited SiC coatings; (b) thermodynamics and kinetics of chemical reactions between SiC and fission products; (c) irradiation behavior of SiC in the absence of fission products; and (d) combined effects of irradiation and fission products. This paper reports the behavior of SiC deposited on inert microspheres and irradiated to fast neutron fluences typical of HTGR fuel at end-of-life.

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Microstructural Evaluation of Silicon Carbide Whisker Reinforced Alumina Fabricated with Carbon-Coated Whiskers

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100088919 ◽

1991 ◽

Vol 49 ◽

pp. 920-921

Author(s):

K. B. Alexander ◽

P. F. Becher

Keyword(s):

Silicon Carbide ◽

High Resolution Electron Microscopy ◽

Ceramic Composites ◽

Interface Debonding ◽

Resolution Electron ◽

Microstructural Evaluation ◽

Carbon Coated ◽

Electron Energy Loss ◽

Interfacial Films ◽

Debonding Process

The presence of interfacial films at the whisker-matrix interface can significantly influence the fracture toughness of ceramic composites. The film may alter the interface debonding process though changes in either the interfacial fracture energy or the residual stress at the interface. In addition, the films may affect the whisker pullout process through the frictional sliding coefficients or the extent of mechanical interlocking of the interface due to the whisker surface topography.Composites containing ACMC silicon carbide whiskers (SiCw) which had been coated with 5-10 nm of carbon and Tokai whiskers coated with 2 nm of carbon have been examined. High resolution electron microscopy (HREM) images of the interface were obtained with a JEOL 4000EX electron microscope. The whisker geometry used for HREM imaging is described in Reference 2. High spatial resolution (< 2-nm-diameter probe) parallel-collection electron energy loss spectroscopy (PEELS) measurements were obtained with a Philips EM400T/FEG microscope equipped with a Gatan Model 666 spectrometer.

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TEM of grain growth and phase transformations during creep of SCS-6 silicon carbide fibers

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100138129 ◽

1995 ◽

Vol 53 ◽

pp. 350-351

Author(s):

L. A. Giannuzzi ◽

C. A. Lewinsohn ◽

C. E. Bakis ◽

R. E. Tressler

Keyword(s):

Silicon Carbide ◽

Creep Rate ◽

Vapor Deposition ◽

Chemical Vapor ◽

Primary Creep ◽

Excess Carbon ◽

Silicon Carbide Fibers ◽

Sic Fiber ◽

Carbon Core ◽

Grain Width

The SCS-6 SiC fiber is a 142 μm diameter fiber consisting of four distinct regions of βSiC. These SiC regions vary in excess carbon content ranging from 10 a/o down to 5 a/o in the SiC1 through SiC3 region. The SiC4 region is stoichiometric. The SiC sub-grains in all regions grow radially outward from the carbon core of the fiber during the chemical vapor deposition processing of these fibers. In general, the sub-grain width changes from 50nm to 250nm while maintaining an aspect ratio of ~10:1 from the SiC1 through the SiC4 regions. In addition, the SiC shows a <110> texture, i.e., the {111} planes lie ±15° along the fiber axes. Previous has shown that the SCS-6 fiber (as well as the SCS-9 and the developmental SCS-50 μm fiber) undergoes primary creep (i.e., the creep rate constantly decreases as a function of time) throughout the lifetime of the creep test.

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