Wide bandwidth room-temperature THz imaging array based on antenna-coupled MOSFET bolometer

2014 ◽  
Vol 215 ◽  
pp. 96-104 ◽  
Author(s):  
Thomas Morf ◽  
Bernhard Klein ◽  
Michel Despont ◽  
Ute Drechsler ◽  
Lukas Kull ◽  
...  
Sensors ◽  
2021 ◽  
Vol 21 (12) ◽  
pp. 4092
Author(s):  
Gintaras Valušis ◽  
Alvydas Lisauskas ◽  
Hui Yuan ◽  
Wojciech Knap ◽  
Hartmut G. Roskos

In this roadmap article, we have focused on the most recent advances in terahertz (THz) imaging with particular attention paid to the optimization and miniaturization of the THz imaging systems. Such systems entail enhanced functionality, reduced power consumption, and increased convenience, thus being geared toward the implementation of THz imaging systems in real operational conditions. The article will touch upon the advanced solid-state-based THz imaging systems, including room temperature THz sensors and arrays, as well as their on-chip integration with diffractive THz optical components. We will cover the current-state of compact room temperature THz emission sources, both optolectronic and electrically driven; particular emphasis is attributed to the beam-forming role in THz imaging, THz holography and spatial filtering, THz nano-imaging, and computational imaging. A number of advanced THz techniques, such as light-field THz imaging, homodyne spectroscopy, and phase sensitive spectrometry, THz modulated continuous wave imaging, room temperature THz frequency combs, and passive THz imaging, as well as the use of artificial intelligence in THz data processing and optics development, will be reviewed. This roadmap presents a structured snapshot of current advances in THz imaging as of 2021 and provides an opinion on contemporary scientific and technological challenges in this field, as well as extrapolations of possible further evolution in THz imaging.


2018 ◽  
Vol 26 (11) ◽  
pp. 13730 ◽  
Author(s):  
Chuncai Hou ◽  
Jialin Sun ◽  
Jiqiang Ning ◽  
Jinchuan Zhang ◽  
Ning Zhuo ◽  
...  

Nano Letters ◽  
2012 ◽  
Vol 12 (12) ◽  
pp. 6432-6435 ◽  
Author(s):  
T. S. Abhilash ◽  
John P. Mathew ◽  
Shamashis Sengupta ◽  
M. R. Gokhale ◽  
Arnab Bhattacharya ◽  
...  

2010 ◽  
Vol 5 ◽  
pp. 952-955
Author(s):  
Marcelo B. Pisani ◽  
Kailiang Ren ◽  
Ping Kao ◽  
Srinivas Tadigadapa

2020 ◽  
Vol 10 (21) ◽  
pp. 7924 ◽  
Author(s):  
Yang Liu ◽  
Bo Zhang ◽  
Yinian Feng ◽  
Xiaolin Lv ◽  
Dongfeng Ji ◽  
...  

Frequency multipliers and mixers based on Schottky barrier diodes (SBDs) are widely used in terahertz (THz) imaging applications. However, they still face obstacles, such as poor performance consistency caused by discrete flip-chip diodes, as well as low efficiency and large receiving noise temperature. It is very hard to meet the requirement of multiple channels in THz imaging array. In order to solve this problem, 12-μm-thick gallium arsenide (GaAs) monolithic integrated technology was adopted. In the process, the diode chip shared the same GaAs substrate with the transmission line, and the diode’s pads were seamlessly connected to the transmission line without using silver glue. A three-dimensional (3D) electromagnetic (EM) model of the diode chip was established in Ansys High Frequency Structure Simulator (HFSS) to accurately characterize the parasitic parameters. Based on the model, by quantitatively analyzing the influence of the surface channel width and the diode anode junction area on the best efficiency, the final parameters and dimensions of the diode were further optimized and determined. Finally, three 0.34 THz triplers and subharmonic mixers (SHMs) were manufactured, assembled, and measured for demonstration, all of which comprised a waveguide housing, a GaAs circuit integrated with diodes, and other external connectors. Experimental results show that all the triplers and SHMs had great performance consistency. Typically, when the input power was 100 mW, the output power of the THz tripler was greater than 1 mW in the frequency range of 324 GHz to 352 GHz, and a peak efficiency of 6.8% was achieved at 338 GHz. The THz SHM exhibited quite a low double sideband (DSB) noise temperature of 900~1500 K and a DSB conversion loss of 6.9~9 dB over the frequency range of 325~352 GHz. It is indicated that the GaAs monolithic integrated process, diodes modeling, and circuits simulation method in this paper provide an effective way to design THz frequency multiplier and mixer circuits.


2007 ◽  
Vol 17 (2) ◽  
pp. 310-313 ◽  
Author(s):  
P. Helisto ◽  
J.S. Penttila ◽  
H. Sipola ◽  
L. Gronberg ◽  
F. Maibaum ◽  
...  

2010 ◽  
Vol 18 (3) ◽  
Author(s):  
W. Knap ◽  
H. Videlier ◽  
S. Nadar ◽  
D. Coquillat ◽  
N. Dyakonova ◽  
...  

AbstractResonant frequencies of the two-dimensional plasma in FETs reach the THz range for nanometer transistor channels. Non-linear properties of the electron plasma are responsible for detection of THz radiation with FETs. Resonant excitation of plasma waves with sub-THz and THz radiation was demonstrated for short gate transistors at cryogenic temperatures. At room temperature, plasma oscillations are usually over-damped, but the FETs can still operate as efficient broadband THz detectors. The paper presents the main theoretical and experimental results on detection with FETs stressing their possible THz imaging applications. We discuss advantages and disadvantages of application of III–V GaAs and GaN HEMTs and silicon MOSFETs.


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