Field effect transistors for terahertz detection - silicon versus III–V material issue

2010 ◽  
Vol 18 (3) ◽  
Author(s):  
W. Knap ◽  
H. Videlier ◽  
S. Nadar ◽  
D. Coquillat ◽  
N. Dyakonova ◽  
...  
Keyword(s):  
Room Temperature ◽  
Field Effect Transistors ◽  
Plasma Waves ◽  
Thz Radiation ◽  
Thz Imaging ◽  
Temperature Plasma ◽  
Resonant Frequencies ◽  
Advantages And Disadvantages ◽  
Terahertz Detection ◽  
Material Issue

AbstractResonant frequencies of the two-dimensional plasma in FETs reach the THz range for nanometer transistor channels. Non-linear properties of the electron plasma are responsible for detection of THz radiation with FETs. Resonant excitation of plasma waves with sub-THz and THz radiation was demonstrated for short gate transistors at cryogenic temperatures. At room temperature, plasma oscillations are usually over-damped, but the FETs can still operate as efficient broadband THz detectors. The paper presents the main theoretical and experimental results on detection with FETs stressing their possible THz imaging applications. We discuss advantages and disadvantages of application of III–V GaAs and GaN HEMTs and silicon MOSFETs.

Harmonic Responses In 2DEG AlGaAs/GaAs HEMT Devices Due To Plasma Wave Interactions

2012 ◽  
Author(s):  
Abdul Manaf Hashim ◽  
Seiya Kasai ◽  
Hideki Hasegawa
Keyword(s):  
Plasma Wave ◽  
Electron Mobility ◽  
Electromagnetic Waves ◽  
Field Effect Transistors ◽  
High Electron Mobility Transistor ◽  
Plasma Waves ◽  
Thz Radiation ◽  
High Electron ◽  
Short Channel ◽  
High Electron Mobility

Gelombang plasma adalah ayunan kepadatan elektron dalam ruang masa, dan di dalam submikro transistor kesan medan, frekuensi plasma khas, ωp, terletak dalam julat terahertz (THz) dan tidak melibatkan peralihan kuantum. Maka, ayunan THz dapat dikesan dan/atau dihasilkan dengan menggunakan ransangan gelombang plasma. Dalam kertas kerja ini, dapat dikaji kaitan gelombang plasma antara penghantaran gelombang plasma dalam saluran pendek transistor pergerakan elektron tinggi (high–electron–mobility transistor – HEMT) dan yang terpancar dari gelombang elektromagnet. Berdasarkan ekperimen, kami telah membuktikan pengesanan radiasi terahertz (THz) oleh AlGaAs /GaAs HEMT hingga harmonik ketiga dalam suhu bilik dan hasil resonan bertepatan dengan hasil kiraan. Kata kunci: Gelombang permukaan plasma; plasma hanyut; peranti THz; GaAs; HEMT Plasma waves are oscillations of electron density in time and space, and in deep submicron field effect transistors, typical plasma frequencies, ωp, lie in the terahertz (THz) range and do not involve any quantum transitions. Hence, using plasma wave excitation for detection and/or generation of THz oscillations is a very promising approach. In this paper, the investigation of plasma wave interaction between the plasma waves propagating in a short–channel High–Electron–Mobility Transistor (HEMT) and that of the radiated electromagnetic waves was carried out. Experimentally, we have demonstrated the detection of the terahertz (THz) radiation by an AlGaAs/GaAs HEMT up to third harmonic at room temperature and their resonant responses show very good agreement with the calculated results. Key words: Surface plasma waves; drift plasma; THz device, GaAs; HEMT

scholarly journals Enhanced terahertz detection of multigate graphene nanostructures

Nanophotonics ◽  
2022 ◽  
Vol 0 (0) ◽  
Author(s):  
Juan A. Delgado-Notario ◽  
Wojciech Knap ◽  
Vito Clericò ◽  
Juan Salvador-Sánchez ◽  
Jaime Calvo-Gallego ◽  
...  
Keyword(s):  
High Performance ◽  
Room Temperature ◽  
Thz Radiation ◽  
Electron Hole ◽  
Back Gate ◽  
Potential Barriers ◽  
Terahertz Detection ◽  
Wide Range ◽  
Order Of Magnitude ◽  
Effect Transistor

Abstract Terahertz (THz) waves have revealed a great potential for use in various fields and for a wide range of challenging applications. High-performance detectors are, however, vital for exploitation of THz technology. Graphene plasmonic THz detectors have proven to be promising optoelectronic devices, but improving their performance is still necessary. In this work, an asymmetric-dual-grating-gate graphene-terahertz-field-effect-transistor with a graphite back-gate was fabricated and characterized under illumination of 0.3 THz radiation in the temperature range from 4.5 K up to the room temperature. The device was fabricated as a sub-THz detector using a heterostructure of h-BN/Graphene/h-BN/Graphite to make a transistor with a double asymmetric-grating-top-gate and a continuous graphite back-gate. By biasing the metallic top-gates and the graphite back-gate, abrupt n+n (or p+p) or np (or pn) junctions with different potential barriers are formed along the graphene layer leading to enhancement of the THz rectified signal by about an order of magnitude. The plasmonic rectification for graphene containing np junctions is interpreted as due to the plasmonic electron-hole ratchet mechanism, whereas, for graphene with n+n junctions, rectification is attributed to the differential plasmonic drag effect. This work shows a new way of responsivity enhancement and paves the way towards new record performances of graphene THz nano-photodetectors.

Terahertz Detection Related to Plasma Excitations in Nanometer Gate Length Field Effect Transistor.

2006 ◽  
Vol 958 ◽  
Author(s):  
Wojciech Knap ◽  
A. El Fatimy ◽  
R. Tauk ◽  
S. Boubanga Tombet ◽  
F. Teppe
Keyword(s):  
Plasma Wave ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Resonant Cavity ◽  
Plasma Waves ◽  
Gate Length ◽  
Terahertz Detection ◽  
Thz Detection ◽  
Effect Transistor

ABSTRACTThe channel of nanometre field effect transistor can act as a resonant cavity for plasma waves. The frequency of these plasma waves is in the Terahertz range and can be tuned by the gate length and the gate bias. During the last few years Terahertz detection and emission related to plasma wave instabilities in nanometre size field effect transistors was demonstrated experimentally. In this work we review the recent results on sub-THz and THz detection by 50-300nm gate length III-V HEMTs and Si MOSFETs. We present experimental results on the resonant and nonresonant (overdamped) plasma wave detection and discuss possible applications of nanometre field effect transistors as new detectors of THz radiations.

Room temperature terahertz detection based on bulk plasmons in antenna-coupled GaAs field effect transistors

2008 ◽  
Vol 92 (25) ◽  
pp. 253508 ◽  
Author(s):  
Sangwoo Kim ◽  
Jeramy D. Zimmerman ◽  
Paolo Focardi ◽  
Arthur C. Gossard ◽  
Dong Ho Wu ◽  
...  
Keyword(s):  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistors ◽  
Terahertz Detection

Room-temperature plasma waves resonant detection of sub-terahertz radiation by nanometer field-effect transistor

2005 ◽  
Vol 87 (5) ◽  
pp. 052107 ◽  
Author(s):  
F. Teppe ◽  
W. Knap ◽  
D. Veksler ◽  
M. S. Shur ◽  
A. P. Dmitriev ◽  
...  
Keyword(s):  
Terahertz Radiation ◽  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistor ◽  
Plasma Waves ◽  
Temperature Plasma ◽  
Effect Transistor

scholarly journals Tunnel field-effect transistors for sensitive terahertz detection

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
I. Gayduchenko ◽  
S. G. Xu ◽  
G. Alymov ◽  
M. Moskotin ◽  
I. Tretyakov ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Electromagnetic Waves ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Low Noise ◽  
Thz Radiation ◽  
Observational Astronomy ◽  
Terahertz Detection ◽  
Lateral Tunnel ◽  
Tunnel Transistors

AbstractThe rectification of electromagnetic waves to direct currents is a crucial process for energy harvesting, beyond-5G wireless communications, ultra-fast science, and observational astronomy. As the radiation frequency is raised to the sub-terahertz (THz) domain, ac-to-dc conversion by conventional electronics becomes challenging and requires alternative rectification protocols. Here, we address this challenge by tunnel field-effect transistors made of bilayer graphene (BLG). Taking advantage of BLG’s electrically tunable band structure, we create a lateral tunnel junction and couple it to an antenna exposed to THz radiation. The incoming radiation is then down-converted by the tunnel junction nonlinearity, resulting in high responsivity (>4 kV/W) and low-noise (0.2 pW/$$\sqrt{{\rm{Hz}}}$$ Hz ) detection. We demonstrate how switching from intraband Ohmic to interband tunneling regime can raise detectors’ responsivity by few orders of magnitude, in agreement with the developed theory. Our work demonstrates a potential application of tunnel transistors for THz detection and reveals BLG as a promising platform therefor.

Sub-THz radiation room temperature sensitivity of long-channel silicon field effect transistors

2012 ◽  
Vol 20 (2) ◽  
Author(s):  
F. Sizov ◽  
A. Golenkov ◽  
D. But ◽  
M. Sakhno ◽  
V. Reva
Keyword(s):  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistors ◽  
Cmos Technology ◽  
Effective Area ◽  
Noise Equivalent Power ◽  
Thz Radiation ◽  
Si Substrates ◽  
Temperature Operating ◽  
Long Channel

AbstractRoom temperature operating n-MOSFETs (n-type metal-oxide silicon field effect transistors) used for registration of sub-THz (sub-terahertz) radiation in the frequency range ν = 53−145 GHz are considered. n-MOSFETs were manufactured by 1-μm Si CMOS technology applied to epitaxial Si-layers (d ≈15 μm) deposited on thick Si substrates (d = 640 μm). It was shown that for transistors with the channel width to length ratio W/L = 20/3 μm without any special antennas used for radiation input, the noise equivalent power (NEP) for radiation frequency ν ≈76 GHz can reach NEP ∼6×10−10 W/Hz1/2. With estimated frequency dependent antenna effective area Sest for contact wires considered as antennas, the estimated possible noise equivalent power NEPpos for n-MOSFET structures themselves can be from ∼15 to ∼103 times better in the specral range of ν ∼55–78 GHz reaching NEPpos ≈10−12 W/Hz1/2.

scholarly journals Plasmonic Field-Effect Transistors (TeraFETs) for 6G Communications

Sensors ◽  
2021 ◽  
Vol 21 (23) ◽  
pp. 7907
Author(s):  
Michael Shur ◽  
Gregory Aizin ◽  
Taiichi Otsuji ◽  
Victor Ryzhii
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Plasma Waves ◽  
Mean Free Path ◽  
Thz Radiation ◽  
Data Traffic ◽  
Short Channel ◽  
Plasmonic Crystals ◽  
Ballistic Electron ◽  
Unit Cells

Ever increasing demands of data traffic makes the transition to 6G communications in the 300 GHz band inevitable. Short-channel field-effect transistors (FETs) have demonstrated excellent potential for detection and generation of terahertz (THz) and sub-THz radiation. Such transistors (often referred to as TeraFETs) include short-channel silicon complementary metal oxide (CMOS). The ballistic and quasi-ballistic electron transport in the TeraFET channels determine the TeraFET response at the sub-THz and THz frequencies. TeraFET arrays could form plasmonic crystals with nanoscale unit cells smaller or comparable to the electron mean free path but with the overall dimensions comparable with the radiation wavelength. Such plasmonic crystals have a potential of supporting the transition to 6G communications. The oscillations of the electron density (plasma waves) in the FET channels determine the phase relations between the unit cells of a FET plasmonic crystal. Excited by the impinging radiation and rectified by the device nonlinearities, the plasma waves could detect both the radiation intensity and the phase enabling the line-of-sight terahertz (THz) detection, spectrometry, amplification, and generation for 6G communication.

scholarly journals Terahertz Detection of Quantum Cascade Laser Emission by Plasma Waves in Field Effect Transistors

2011 ◽  
Vol 120 (5) ◽  
pp. 930-932 ◽  
Author(s):  
F. Teppe ◽  
C. Consejo ◽  
J. Torres ◽  
B. Chenaud ◽  
P. Solignac ◽  
...  
Keyword(s):  
Quantum Cascade Laser ◽  
Field Effect ◽  
Laser Emission ◽  
Field Effect Transistors ◽  
Plasma Waves ◽  
Quantum Cascade ◽  
Terahertz Detection

Cryogenic atomic force microscopy

1991 ◽  
Vol 49 ◽  
pp. 54-55
Author(s):  
K. A. Fisher ◽  
M. G. L. Gustafsson ◽  
M. B. Shattuck ◽  
J. Clarke
Keyword(s):  
Room Temperature ◽  
Rapid Freezing ◽  
Cryogenic Temperatures ◽  
Soft Or ◽  
Electrically Conductive ◽  
Force Microscopy ◽  
Flexible Molecules ◽  
Advantages And Disadvantages ◽  
Atomic Force ◽  
Chemical Perturbation

The atomic force microscope (AFM) is capable of imaging electrically conductive and non-conductive surfaces at atomic resolution. When used to image biological samples, however, lateral resolution is often limited to nanometer levels, due primarily to AFM tip/sample interactions. Several approaches to immobilize and stabilize soft or flexible molecules for AFM have been examined, notably, tethering coating, and freezing. Although each approach has its advantages and disadvantages, rapid freezing techniques have the special advantage of avoiding chemical perturbation, and minimizing physical disruption of the sample. Scanning with an AFM at cryogenic temperatures has the potential to image frozen biomolecules at high resolution. We have constructed a force microscope capable of operating immersed in liquid n-pentane and have tested its performance at room temperature with carbon and metal-coated samples, and at 143° K with uncoated ferritin and purple membrane (PM).

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