Simulation study of the a-Si:H/nc-Si:H solar cells performance sensitivity to the TCO work function, the band gap and the thickness of i-a-Si:H absorber layer

Band-gap-graded Cu2ZnSn(S,Se)4 drives high efficient solar cells

Energy & Environmental Science ◽

10.1039/d1ee03134a ◽

2022 ◽

Author(s):

Hongling Guo ◽

Rutao Meng ◽

Gang Wang ◽

Shenghao Wang ◽

Li Wu ◽

...

Keyword(s):

Solar Cells ◽

Band Gap ◽

Light Harvesting ◽

Absorber Layer ◽

Photovoltaic Application ◽

High Efficient

Fabrication of high efficient solar cells is critical for photovoltaic application. The bandgap-graded absorber layer can not only drive carriers efficient collection but also improve the light harvesting. However, it...

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Computational Study of Inverted All-Inorganic Perovskite Solar Cells Based on CsPbIxBr3-X Absorber Layer with Band Gap of 1.78 eV

10.26434/chemrxiv.13382069.v1 ◽

2020 ◽

Author(s):

Nahuel Martínez ◽

Carlos Pinzón ◽

Guillermo Casas ◽

Fernando Alvira ◽

Marcelo Cappelletti

Keyword(s):

Solar Cells ◽

Band Gap ◽

High Efficiency ◽

Defect Density ◽

Computational Study ◽

Perovskite Solar Cells ◽

Absorber Layer ◽

Inorganic Materials ◽

Tandem Solar Cells ◽

Inorganic Perovskite

All-inorganic perovskite solar cells (PSCs) with inverted p-i-n configuration have not yet reached the high efficiency achieved in the normal n-i-p architecture. However, the inverted all-inorganic PSC are more compatible with the fabrication of tandem solar cells. In this work, a theoretical study of all-inorganic PSCs with inverted structure ITO/HTL/CsPbIxBr3−x/ETL/Ag, has been performed by means of computer simulation. Four p‐type inorganic materials (NiO, Cu2O, CuSCN and CuI) and three n-type inorganic materials (ZnO, TiO2 and SnO2) were used as hole and electron transport layers (HTL and ETL), respectively. A band gap of 1.78 eV was used for the CsPbI x Br3−x perovskite layer. The simulation results allow identifying that CuI and ZnO are the most appropriate materials as HTL and ETL, respectively. Additionally, optimized values of thickness, acceptor density and defect density in the absorber layer have been obtained for the ITO/CuI/CsPbI x Br3−x /ZnO/Ag, from which, an optimum efficiency of 21.82% was achieved. These promising theoretical results aim to improve the manufacturing process of inverted all-inorganic PSCs and to enhance the performance of perovskite–perovskite tandem solar cells.

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Optoelectronic and structural properties of Ge-rich narrow band gap nc-SixGe1-x absorber layer for tandem structure nc-Si solar cells

Journal of Physics and Chemistry of Solids ◽

10.1016/j.jpcs.2021.110055 ◽

2021 ◽

pp. 110055

Author(s):

Amaresh Dey ◽

Debajyoti Das

Keyword(s):

Solar Cells ◽

Band Gap ◽

Structural Properties ◽

Narrow Band ◽

Absorber Layer ◽

Si Solar Cells ◽

Tandem Structure

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A Review of Different Techniques for Improving the Performance of Amorphous Silicon based Solar Cells

Algerian Journal of Renewable Energy and Sustainable Development ◽

10.46657/ajresd.2019.1.2.6 ◽

2019 ◽

Vol 01 (02) ◽

pp. 172-181 ◽

Cited By ~ 3

Author(s):

Ahmed Idda ◽

Leila Ayat ◽

said Bentouba ◽

◽

...

Keyword(s):

Solar Cells ◽

Solar Cell ◽

Amorphous Silicon ◽

Band Gap ◽

Defect Density ◽

Low Cost ◽

Wide Band ◽

Optimization Techniques ◽

Absorber Layer ◽

Window Layer

Hydrogeneted amorphous silicon (a-Si:H) based solar cells are promising candidates for future developments in the photovoltaic industry. In fact, amorphous silicon technology offers significant advantages including low cost fabrication and possibility to deposition on flexible substrat as well as low temperature fabrication. Much progress has been made since the first single junction cell in amorphous silicon made in 1976 by Carlson and Wronski. However, the performance of the solar cells based on a-Si:H is limited by the high defect density and degradation induced by exposure to light, or Staebler-Wronski effect. To become competitive, the performance of the solar cells based on a-Si:H must be improved. In order to improve the performance of a-Si:H solar cells, much research is directed to optimization techniques. The improvement in performance is therefore based on the optimization of the different layers of the solar cell, in particular, the window layer and the absorber layer (intrinsic). The aim of this work is to give an overview on the different techniques and strategies that is used to improve the performance of solar cell. This work is therefore focus in three main areas: first, optimization of window layer, in particular, the p/i interface using wide band gap alloys such as a-SiC:H, second development of high quality absorber layer using band gap engineering, and alloys such as a-SiGe:H. last, optimizing n-type layer and i/n interface.

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Ultra-optical characterization of thin film solar cells materials using core/shell absorber layer

International Journal of Electrical and Computer Engineering (IJECE) ◽

10.11591/ijece.v12i2.pp1377-1384 ◽

2022 ◽

Vol 12 (2) ◽

pp. 1377

Author(s):

Ahmed Thabet ◽

Safaa Abdelhady ◽

Youssef Mobarak

Keyword(s):

Thin Film ◽

Solar Cells ◽

Quantum Dot ◽

Band Gap ◽

Energy Band ◽

Absorber Layer ◽

Thin Film Solar Cells ◽

Window Layer ◽

Core Shell ◽

Energy Band Gap

This paper investigates on new design of heterojunction quantum dot (HJQD) photovoltaics solar cells CdS/PbS that is based on quantum dot metallics PbS core/shell absorber layer and quantum dot window layer. It has been enhanced the performance of traditional HJQD thin film solar cells model based on quantum dot absorber layer and bulk window layer. The new design has been used sub-micro absorber layer thickness to achieve high efficiency with material reduction, low cost, and time. Metallics-semiconductor core/shell absorber layer has been succeeded for improving the optical characteristics such energy band gap and the absorption of absorber layer materials, also enhancing the performance of HJQD ITO/CdS/QDPbS/Au, sub micro thin film solar cells. Finally, it has been formulating the quantum dot (QD) metallic cores concentration effect on the absorption, energy band gap and electron-hole generation rate in absorber layers, external quantum efficiency, energy conversion efficiency, fill factor of the innovative design of HJQD cells.

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Simulation of Silicon Heterojunction Solar Cells for High Efficiency with Lithium Fluoride Electron Carrier Selective Layer

Energies ◽

10.3390/en13071635 ◽

2020 ◽

Vol 13 (7) ◽

pp. 1635 ◽

Cited By ~ 1

Author(s):

Muhammad Quddamah Khokhar ◽

Shahzada Qamar Hussain ◽

Duy Phong Pham ◽

Sunhwa Lee ◽

Hyeongsik Park ◽

...

Keyword(s):

Solar Cells ◽

Work Function ◽

Band Gap ◽

Power Conversion Efficiency ◽

Conversion Efficiency ◽

Lithium Fluoride ◽

Power Conversion ◽

Wide Band ◽

Dramatic Improvement ◽

Wide Band Gap

In this work, to ameliorate the quantum efficiency (QE), we made a valuable development by using wide band gap material, such as lithium fluoride (LiFx), as an emitter that also helped us to achieve outstanding efficiency with silicon heterojunction (SHJ) solar cells. Lithium fluoride holds a capacity to achieve significant power conversion efficiency because of its dramatic improvement in electron extraction and injection, which was investigated using the AFORS-HET simulation. We used AFORS-HET to assess the restriction of numerous parameters which also provided an appropriate way to determine the role of diverse parameters in silicon solar cells. We manifested and preferred lithium fluoride as an interfacial layer to diminish the series resistance as well as shunt leakage and it was also beneficial for the optical properties of a cell. Due to the wide band gap and better surface passivation, the LiFx encouraged us to utilize it as the interfacial as well as the emitter layer. In addition, we used the built-in electric and band offset to explore the consequence of work function in the LiFx as a carrier selective contact layer. We were able to achieve a maximum power conversion efficiency (PEC) of 23.74%, fill factor (FF) of 82.12%, Jsc of 38.73 mA cm−2, and Voc of 741 mV by optimizing the work function and thickness of LiFx layer.

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Simulation analysis of functional MoSe2 layer for ultra-thin Cu(In,Ga)Se2 solar cells architecture

Modern Physics Letters B ◽

10.1142/s0217984920500657 ◽

2019 ◽

Vol 34 (05) ◽

pp. 2050065

Author(s):

Tariq Alzoubi ◽

Mohamed Moustafa

Keyword(s):

Solar Cells ◽

Band Gap ◽

High Performance ◽

Simulation Analysis ◽

Cost Effective ◽

Band Gap Energy ◽

Absorber Layer ◽

Back Surface ◽

Transition Metal Dichalcogenide ◽

Back Contact

The influence of Molybdenum diselenide transition metal dichalcogenide material (p-type MoSe2 TMDC) as an interfacial layer between the ultra-thin Cu (In, Ga)Se2 (CIGS) absorber layer, with thickness less than 500[Formula: see text]nm, and molybdenum back contact was studied using SCAPS-1D simulation package. The possible effects of the p-MoSe2 layer on the electrical properties and the photovoltaic parameters of the CIGS thin-film solar cells have been investigated. Band gap energy, carrier concentration, and the layer thickness of the p-MoSe2 were varied in this study. The optimum band gap is found to be of 1.3 eV. Interfacial layers of thicknesses less than 200 nm have been found to cause deterioration for the overall cell performance. This might be attributed to the increase in the back-contact recombination current and the reduction of the built-in potential at p-MoSe2/CIGS junction. Furthermore, the MoSe2 layer would form the so-called back surface field (BSF), due to the associated wider band gap with respect to that of CIGS absorber layer. Additionally, the simulation of the I–V characteristic showed a higher slope which implies that MoSe2 layer at the CIGS/Mo interface acts in a beneficial way on the CIGS/Mo hetero-contact adapting it from Schottky type contact to quasi-ohmic contact. The conversion efficiency has increased significantly from 14.61% to 22.08%, without and with the MoSe2 layer, respectively. These findings are very promising for future high performance and cost-effective solar cell devices.

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Influence of surface properties on the performance of Cu(In,Ga)(Se,S)2thin-film solar cells using Kelvin probe force microscopy

RSC Advances ◽

10.1039/c5ra05330g ◽

2015 ◽

Vol 5 (51) ◽

pp. 40719-40725 ◽

Cited By ~ 12

Author(s):

JungYup Yang ◽

Dongho Lee ◽

KwangSoo Huh ◽

SeungJae Jung ◽

JiWon Lee ◽

...

Keyword(s):

Solar Cells ◽

Band Gap ◽

Surface Properties ◽

Open Circuit Voltage ◽

Open Circuit ◽

Absorber Layer ◽

Kelvin Probe Force Microscopy ◽

Kelvin Probe ◽

Force Microscopy ◽

Graded Band Gap

We have investigated the sulfurization process in a Cu(In,Ga)(Se,S)2absorber layer fabricated by a two-step sputter and selenization/sulfurization method in order to make an ideal double-graded band-gap profile and increase the open circuit voltage.

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Computational Study of Inverted All-Inorganic Perovskite Solar Cells Based on CsPbIxBr3-X Absorber Layer with Band Gap of 1.78 eV

10.26434/chemrxiv.13382069 ◽

2020 ◽

Author(s):

Nahuel Martínez ◽

Carlos Pinzón ◽

Guillermo Casas ◽

Fernando Alvira ◽

Marcelo Cappelletti

Keyword(s):

Solar Cells ◽

Band Gap ◽

High Efficiency ◽

Defect Density ◽

Computational Study ◽

Perovskite Solar Cells ◽

Absorber Layer ◽

Inorganic Materials ◽

Tandem Solar Cells ◽

Inorganic Perovskite

All-inorganic perovskite solar cells (PSCs) with inverted p-i-n configuration have not yet reached the high efficiency achieved in the normal n-i-p architecture. However, the inverted all-inorganic PSC are more compatible with the fabrication of tandem solar cells. In this work, a theoretical study of all-inorganic PSCs with inverted structure ITO/HTL/CsPbIxBr3−x/ETL/Ag, has been performed by means of computer simulation. Four p‐type inorganic materials (NiO, Cu2O, CuSCN and CuI) and three n-type inorganic materials (ZnO, TiO2 and SnO2) were used as hole and electron transport layers (HTL and ETL), respectively. A band gap of 1.78 eV was used for the CsPbI x Br3−x perovskite layer. The simulation results allow identifying that CuI and ZnO are the most appropriate materials as HTL and ETL, respectively. Additionally, optimized values of thickness, acceptor density and defect density in the absorber layer have been obtained for the ITO/CuI/CsPbI x Br3−x /ZnO/Ag, from which, an optimum efficiency of 21.82% was achieved. These promising theoretical results aim to improve the manufacturing process of inverted all-inorganic PSCs and to enhance the performance of perovskite–perovskite tandem solar cells.

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