Effective passivation and high-performance metal–oxide–semiconductor devices using ultra-high-vacuum deposited high-κ dielectrics on Ge without interfacial layers

2010 ◽  
Vol 54 (9) ◽  
pp. 965-971 ◽  
Author(s):  
L.K. Chu ◽  
R.L. Chu ◽  
T.D. Lin ◽  
W.C. Lee ◽  
C.A. Lin ◽  
...  
Keyword(s):  
Metal Oxide ◽  
High Performance ◽  
Semiconductor Devices ◽  
High Vacuum ◽  
Metal Oxide Semiconductor ◽  
Ultra High Vacuum ◽  
Oxide Semiconductor ◽  
Interfacial Layers

Ga2O3(Gd2O3) on Ge without interfacial layers: Energy-band parameters and metal oxide semiconductor devices

2009 ◽  
Vol 94 (20) ◽  
pp. 202108 ◽  
Author(s):  
L. K. Chu ◽  
T. D. Lin ◽  
M. L. Huang ◽  
R. L. Chu ◽  
C. C. Chang ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Energy Band ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Interfacial Layers
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