Low-frequency noise and static analysis of the impact of the TiN metal gate thicknesses on n- and p-channel MuGFETs

2010 ◽  
Vol 54 (12) ◽  
pp. 1592-1597 ◽  
Author(s):  
M. Rodrigues ◽  
J.A. Martino ◽  
A. Mercha ◽  
N. Collaert ◽  
E. Simoen ◽  
...  
Keyword(s):  
Static Analysis ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Metal Gate ◽  
Tin Metal ◽  
The Impact

The Impact of Ultra Thin ALD TiN Metal Gate on Low Frequency Noise of CMOS Transistors

2007 ◽  
Author(s):  
A. Mercha ◽  
R. Singanamalla ◽  
V. Subramanian ◽  
E. Simoen ◽  
W. Sansen ◽  
...  
Keyword(s):  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Metal Gate ◽  
Cmos Transistors ◽  
Tin Metal ◽  
The Impact

TaN Versus TiN Metal Gate Input/Output pMOSFETs: A Low-Frequency Noise Perspective

2018 ◽  
Vol 65 (9) ◽  
pp. 3676-3681 ◽  
Author(s):  
Eddy Simoen ◽  
Barry O'sullivan ◽  
Romain Ritzenthaler ◽  
Eugenio Dentoni Litta ◽  
Tom Schram ◽  
...  
Keyword(s):  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Input Output ◽  
Metal Gate ◽  
Tin Metal ◽  
Gate Input

Ceiling Construction Low-Frequency Noise Issues

2013 ◽  
Vol 649 ◽  
pp. 277-280
Author(s):  
Petra Berková ◽  
Pavel Berka
Keyword(s):  
Spectral Analysis ◽  
Low Frequency ◽  
Sound Insulation ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Frequency Tone ◽  
The Impact ◽  
40 Hz

Through the use of a spectral analysis of the source of noise – person’s movement over the ceiling construction – it was found out that in this kind of noise distinctive low-frequency tone components occur (31,5 - 40 Hz) which is beyond the evaluation area of the impact sound insulation of the ceiling construction, s. [2], [3].

Investigation of low-frequency noise of 28-nm technology process of high-k/metal gate p-MOSFETs with fluorine incorporation

2016 ◽  
Vol 115 ◽  
pp. 7-11
Author(s):  
Tsung-Hsien Kao ◽  
Shoou-Jinn Chang ◽  
Yean-Kuen Fang ◽  
Po-Chin Huang ◽  
Bo-Chin Wang ◽  
...  
Keyword(s):  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Metal Gate ◽  
High K ◽  
Technology Process ◽  
28 Nm

Improving Low-Frequency Noise in 14-nm FinFET by Optimized High-k/Metal Gate Thermal Processing

2021 ◽  
pp. 1-1
Author(s):  
Hao Zhu ◽  
Bin Ye ◽  
Chengkang Tang ◽  
Xianghui Li ◽  
Qingqing Sun ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Metal Gate ◽  
High K

Low-Frequency Noise Investigation and Noise Variability Analysis in High- $k$/Metal Gate 32-nm CMOS Transistors

2011 ◽  
Vol 58 (8) ◽  
pp. 2310-2316 ◽  
Author(s):  
Diana Lopez ◽  
S. Haendler ◽  
C. Leyris ◽  
Gregory Bidal ◽  
Gérard Ghibaudo
Keyword(s):  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Metal Gate ◽  
Variability Analysis ◽  
Cmos Transistors ◽  
High K

Impact of Trap Behavior in High-k/Metal Gate p-MOSFET with Incorporated Fluorine on Low-Frequency Noise Characteristics

2014 ◽  
Author(s):  
T.–H. Kao ◽  
S.–L. Wu ◽  
C.–Y. Wu ◽  
Y.–K. Fang ◽  
P.–C. Huang ◽  
...  
Keyword(s):  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Metal Gate ◽  
Noise Characteristics ◽  
High K

Low Frequency Noise Analysis in Advanced CMOS Devices

2011 ◽  
Vol 324 ◽  
pp. 441-444 ◽  
Author(s):  
Jalal Jomaah ◽  
Majida Fadlallah ◽  
Gerard Ghibaudo
Keyword(s):  
Experimental Data ◽  
Noise Analysis ◽  
Low Frequency ◽  
Deep Submicron ◽  
Electrical Noise ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Sources ◽  
The Impact ◽  
Mobility Fluctuations

A review of recent results concerning the low frequency noise in modern CMOS devices is given. The approaches such as the carrier number and the Hooge mobility fluctuations used for the analysis of the noise sources are illustrated through experimental data obtained on advanced CMOS generations. Furthermore, the impact on the electrical noise of the shrinking of CMOS devices in the deep submicron range is also shown.

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