Lead based ferroelectric capacitors for low voltage non-volatile memory applications

ABSTRACTModified lead titanate ferroelectdc thin films are currently utilized in conjunction with silicon CMOS technology for non-volatile memory applications. The electrical measurement of ferroelectric films has been common practice for many years but the parameters necessary for optimizing their use as memory have not been routinely recorded. Remanent polarization, spontaneous polarization and their change through fatigue and ageing are still the dominant parameters but the pulsing conditions of interest are driven by the circuit requirements. The operation of a memory circuit will be discussed along with implications for testing. Memory is written by applying a pulse to the capacitor. It is read by applying a pulse and sensing whether or not the polarization switched. Read and write pulses will apply different voltages to the ferroelectric capacitor in the circuit because a sense capacitor will be in series with it during the read. A new test, pulsed hysteresis, which is based on circuit operation will be presented. Parameter space of interest will also be discussed.

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Hysteresis Behavior of the Donor–Acceptor-Type Ambipolar Semiconductor for Non-Volatile Memory Applications

Micromachines ◽

10.3390/mi12030301 ◽

2021 ◽

Vol 12 (3) ◽

pp. 301

Author(s):

Young Jin Choi ◽

Jihyun Kim ◽

Min Je Kim ◽

Hwa Sook Ryu ◽

Han Young Woo ◽

...

Keyword(s):

Organic Semiconductor ◽

Field Effect ◽

Field Effect Transistor ◽

Memory Device ◽

Non Volatile Memory ◽

Device Applications ◽

Donor Acceptor ◽

Effect Transistor ◽

Volatile Memory ◽

Memory Applications

Donor–acceptor-type organic semiconductor molecules are of great interest for potential organic field-effect transistor applications with ambipolar characteristics and non-volatile memory applications. Here, we synthesized an organic semiconductor, PDPPT-TT, and directly utilized it in both field-effect transistor and non-volatile memory applications. As-synthesized PDPPT-TT was simply spin-coated on a substrate for the device fabrications. The PDPPT-TT based field-effect transistor showed ambipolar electrical transfer characteristics. Furthermore, a gold nanoparticle-embedded dielectric layer was used as a charge trapping layer for the non-volatile memory device applications. The non-volatile memory device showed clear memory window formation as applied gate voltage increases, and electrical stability was evaluated by performing retention and cycling tests. In summary, we demonstrate that a donor–acceptor-type organic semiconductor molecule shows great potential for ambipolar field-effect transistors and non-volatile memory device applications as an important class of materials.

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The electrical characteristics of metal-ferroelectric (PbZr/sub x/Ti/sub 1-x/O/sub 3/)-insulator(Ta/sub 2/O/sub 5/)-silicon structure for non-volatile memory applications

2000 International Semiconducting and Insulating Materials Conference. SIMC-XI (Cat. No.00CH37046) ◽

10.1109/sim.2000.939259 ◽

2002 ◽

Author(s):

Chi-Yuan Sze ◽

J.Y. Lee

Keyword(s):

Electrical Characteristics ◽

Silicon Structure ◽

Non Volatile Memory ◽

Volatile Memory ◽

Memory Applications

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Resistive switching characteristics of all-solution-based Ag/TiO2/Mo-doped In2O3devices for non-volatile memory applications

Journal of Materials Chemistry C ◽

10.1039/c6tc03607d ◽

2016 ◽

Vol 4 (46) ◽

pp. 10967-10972 ◽

Cited By ~ 35

Author(s):

Sujaya Kumar Vishwanath ◽

Jihoon Kim

Keyword(s):

Resistive Switching ◽

Retention Time ◽

Elevated Temperatures ◽

Switching Behavior ◽

Memory Devices ◽

Bipolar Switching ◽

Non Volatile Memory ◽

Volatile Memory ◽

Switching Characteristics ◽

Memory Applications

The all-solution-based memory devices demonstrated excellent bipolar switching behavior with a high resistive switching ratio of 103, excellent endurance of more than 1000 cycles, stable retention time greater than 104s at elevated temperatures, and fast programming speed of 250 ns.

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