An enhancement-mode pseudomorphic high electron mobility transistor prepared by an Electroless Plating (EP) and a gate-sinking approaches

2015 ◽  
Vol 105 ◽  
pp. 45-50
Author(s):  
Chun-Chia Chen ◽  
Huey-Ing Chen ◽  
I-Ping Liu ◽  
Po-Cheng Chou ◽  
Jian-Kai Liou ◽  
...  
Keyword(s):  
Electroless Plating ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Enhancement Mode

High-Performance AlGaN/GaN Enhancement-Mode High Electron Mobility Transistor by Two-Step Gate Recess and Electroless-Plating Approaches

2021 ◽  
Vol 13 (1) ◽  
pp. 30-35
Author(s):  
Ching-Hong Chang ◽  
Yue-Chang Lin ◽  
Jing-Shiuan Niu ◽  
Wen-Shiung Lour ◽  
Jung-Hui Tsai ◽  
...  
Keyword(s):  
Electroless Plating ◽  
Electron Mobility ◽  
High Performance ◽  
Drain Current ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Enhancement Mode ◽  
Improved Performance ◽  
Gate Recess

In this work, an AlGaN/GaN enhancement-mode high electron mobility transistor (HEMT) with two-step gate recess and electroless plating (EP) approaches is reported. Scanning electron microscopy and atomic force microscopy surface analysis are used to analysis the related properties of the EP-gate structure. A positive threshold voltage Vthof 0.68 V is obtained for the enhancement-mode EP-HEMT. In addition, a traditional HEMT based on thermal-evaporation gate is compared for the demonstration of the studied EP-HEMT with the improved performance, such as a higher maximum drain saturation current of 228.9 mA/mm, a higher maximum transconductance of 107.2 mS/mm, a lower gate leakage current of 1.2 × 10–7 mA/mm, and a higher ON/OFF drain current ratio of 4.57 × 105.

Double δ-Doped Enhancement-Mode InGaP/AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistor for Linearity Application

2006 ◽  
Vol 45 (No. 35) ◽  
pp. L932-L934 ◽  
Author(s):  
Li-Hsin Chu ◽  
Heng-Tung Hsu ◽  
Edward-Yi Chang ◽  
Tser-Lung Lee ◽  
Sze-Hung Chen ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Enhancement Mode

Applications of GaN-Based High Electron Mobility Transistors in Large-Size Devices

2015 ◽  
Vol 764-765 ◽  
pp. 486-490
Author(s):  
Chih Hao Wang ◽  
Liang Yu Su ◽  
Finella Lee ◽  
Jian Jang Huang
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Saturation Current ◽  
High Electron Mobility ◽  
Enhancement Mode ◽  
Electron Mobility Transistors ◽  
Large Size ◽  
Novel Design

We demonstrate a novel design of large-size device in AlGaN/GaN high-electron-mobility transistor (HEMT). Depletion mode (D-mode) HEMTs and enhancement mode (E-mode) HEMTs are fabricated in our research. The saturation current of D-mode HEMTs is over 6A. By using Cascode structure, the D-mode HEMT becomes a normally-off device efficiently, and the threshold voltage of it rises from-7V to 2V. By using BCB (Benzocyclobutene) as the passivation, the E-mode HEMT shows an excellent characteristic. Also, when the VGS of the E-mode HEMT is over 9V, it still shows a good performance.

A novel enhancement mode AlGaN/GaN high electron mobility transistor with split floating gates

2017 ◽  
Vol 26 (4) ◽  
pp. 047305 ◽  
Author(s):  
Hui Wang ◽  
Ning Wang ◽  
Ling-Li Jiang ◽  
Xin-Peng Lin ◽  
Hai-Yue Zhao ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Floating Gates ◽  
High Electron Mobility ◽  
Enhancement Mode

A Charge Storage Based Enhancement Mode AlGaN/GaN High Electron Mobility Transistor

2018 ◽  
Vol 913 ◽  
pp. 870-875 ◽  
Author(s):  
Hui Wang ◽  
Ling Li Jiang ◽  
Ning Wang ◽  
Hong Yu Yu ◽  
Xin Peng Lin
Keyword(s):  
Electron Mobility ◽  
Gate Dielectric ◽  
High Electron Mobility Transistor ◽  
Charge Storage ◽  
High Electron ◽  
High Electron Mobility ◽  
Charge Trap ◽  
Enhancement Mode ◽  
A Charge ◽  
The Impact

In this work, a charge storage based enhancement mode (E-mode) AlGaN/GaN high electron mobility transistor (HEMT) is proposed and studied. A stacked gate dielectrics, consisting of a tunnel oxide, a charge trap layer and a blocking oxide are applied in the HEMT structure. The E-mode can be realized by negative charge storage within the charge trap layer during the programming process. The impact of the programming condition and the thickness of the dielectrics on the threshold voltage (Vth) are simulated systematically. It is found that the Vth increases with the increasing programming voltage and time due to the increase of the storage charge. Under proper programming condition, the Vth can be increased to more than 2 V. Moreover, It is also found that the Vth increases with the decrease of the thickness of the dielectrics. In addition, it is found that the breakdown voltage of such HEMT can be adjusted by varying the gate dielectric stacks.

Sign in / Sign up

Export Citation Format

Share Document