scholarly journals Breakdown Voltage Enhancement of Al0.1Ga0.9N channel HEMT With Recessed Floating Field Plate

2021 ◽  
Author(s):  
Ramkumar Natarajan ◽  
Eswaran Parthasarathy
Keyword(s):  
Breakdown Voltage ◽  
Hafnium Oxide ◽  
Figure Of Merit ◽  
Drain Current ◽  
Power Switching ◽  
High Power Microwave ◽  
Field Plate ◽  
State Breakdown ◽  
Power Microwave ◽  
Microwave Characteristics

Abstract In this paper, electrical and microwave characteristics of Al0.1Ga0.9N channel HEMTs was reported. The device performance were evaluated for conventional gate, field plate gate, and recessed floating field plate with Silicon nitride (SiN)/Hafnium oxide (HfO2) passivation. The recessed floating field plate HEMT with gate length LG = 0.8 µm, gate to drain distance LGD = 1 µm, and HfO2(SiN) passivation HEMT reports peak drain current density (IDS) of 0.282(0.288) A/mm at VGS = 0V, three terminal off-state breakdown voltage (VBR) of 677 (617) V, 6.38 Ω.mm of ON-resistance (RON), transconductance (gm,max) of 93(95) mS/mm, and FT/FMAX of 11.4/49 (12/22) GHz. The HfO2 (SiN) passivation device demonstrated the Johnson figure of merit (JFoM)) of 7.71 (7.404) THz.V and FMAX x VBR product of 33.173 (13.574) THz.V. The high JFoM along with high FMAX x VBR indicates the potential of the ultrawide bandgap AlGaN HEMTs for future power switching and high-power microwave applications. The proposed device DC characteristics are validated with reported expeimental work, which shows similar IDS and 54% and and 31% improvement in breakdown voltage on comparisons with conventional HEMT.

AlGaN Channel HEMT with Extremely High Breakdown Voltage

2011 ◽  
Vol 1324 ◽  
Author(s):  
Takuma Nanjo ◽  
Misaichi Takeuchi ◽  
Akifumi Imai ◽  
Yousuke Suzuki ◽  
Muneyoshi Suita ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Drain Current ◽  
High Electron Mobility Transistors ◽  
Low Noise ◽  
Low Noise Amplifiers ◽  
High Electron ◽  
Field Plate ◽  
Electron Mobility Transistors ◽  
Doping Technique ◽  
Resistive Source

ABSTRACTA channel layer substitution of a wider bandgap AlGaN for a conventional GaN in high electron mobility transistors (HEMTs) is an effective method of enhancing the breakdown voltage. Wider bandgap AlGaN, however, should also increase the ohmic contact resistance. Si ion implantation doping technique was utilized to achieve sufficiently low resistive source/drain contacts. The fabricated AlGaN channel HEMTs with the field plate structure demonstrated good pinch-off operation with sufficiently high drain current density of 0.5 A/mm without noticeable current collapse. The obtained maximum breakdown voltages was 1700 V in the AlGaN channel HEMT with the gate-drain distance of 10 μm. These remarkable results indicate that AlGaN channel HEMTs could become future strong candidates for not only high-frequency devices such as low noise amplifiers but also high-power devices such as switching applications.

scholarly journals 60 GHz Double Deck T-Gate AlN/GaN/AlGaN HEMT for V-Band Satellites

2021 ◽  
Author(s):  
A.S. Augustine Fletcher ◽  
D Nirmal ◽  
J Ajayan ◽  
L Arivazhagan ◽  
Husna Hamza K ◽  
...  
Keyword(s):  
Electric Field ◽  
Breakdown Voltage ◽  
Figure Of Merit ◽  
Drain Current ◽  
60 Ghz ◽  
Mechanical Reliability ◽  
Gan Hemt ◽  
V Band ◽  
Silicon Carbide Substrate ◽  
Gate Edge

Abstract The influence of double deck T-gate on LG=0.2 μm AlN/GaN/AlGaN HEMT is analysed in this paper. The T-gate supported with Silicon Nitride provides a tremendous mechanical reliability. It drops off the crest electric-field at gate edges and postponing the breakdown voltage of a device. A 0.2-μm double deck T-gate HEMT on Silicon Carbide substrate offer fMAX of 107 Giga Hertz, fT of 60 Giga Hertz and the breakdown voltage of 136 Volts. Furthermore, it produces the maximum-transconductance and drain-current of 0.187 Siemens/mm and 0.41 Ampere/mm respectively. In addition, the lateral electric-field noticed at gate-edge shows 2.1×106 Volts/cm. Besides, the double deck T-gate AlN/GaN HEMT achieves a 45 % increment in breakdown voltage compared to traditional GaN-HEMT device. Moreover, it reveals a remarkable Johnson figure-of-merit of 7.9 Tera Hertz Volt. Therefore, the double deck T-gate on AlN/GaN/AlGaN HEMT is the superlative device for 60 GHz V-band satellite application.

scholarly journals High drain-current-density and high breakdown-field Al0.36Ga0.64N-channel heterojunction filed-effect transistors with a dual AlN/AlGaInN barrier layer

2022 ◽  
Author(s):  
Akiyoshi Inoue ◽  
Sakura Tanaka ◽  
Takashi Egawa ◽  
Makoto Miyoshi
Keyword(s):  
Current Density ◽  
Barrier Layer ◽  
Ohmic Contacts ◽  
Field Effect Transistors ◽  
Drain Current ◽  
Device Fabrication ◽  
Breakdown Field ◽  
Field Plate ◽  
Order Of Magnitude ◽  
State Breakdown

Abstract In this study, we fabricated and characterized heterojunction field-effect transistors (HFETs) based on an Al0.36Ga0.64N-channel heterostructure with a dual AlN/AlGaInN barrier layer. The device fabrication was accomplished by adopting a regrown n++-GaN layer for ohmic contacts. The fabricated HFETs with a gate length of 2 μm and a gate-to-drain distance of 6 μm exhibited an on-state drain current density as high as approximately 270 mA/mm and an off-state breakdown voltage of approximately 1 kV, which corresponds to an off-state critical electric field of 166 V/μm. This breakdown field, as a comparison in devices without field-plate electrodes, reaches approximately four-fold higher than that for conventional GaN-channel HFETs and was considered quite reasonable as an Al0.36Ga0.64N-channel transistor. It was also confirmed that the devices adopting the dual AlN/AlGaInN barrier layer showed approximately one order of magnitude smaller gate leakage currents than those for devices without the top AlN barrier layer.

High Voltage AlGaN/GaN Heterojunction Transistors

2004 ◽  
Vol 14 (01) ◽  
pp. 225-243 ◽  
Author(s):  
L. S. McCarthy ◽  
N-Q. Zhang ◽  
H. Xing ◽  
B. Moran ◽  
S. DenBaars ◽  
...  
Keyword(s):  
Drain Current ◽  
Gate Insulator ◽  
Threading Dislocation ◽  
High Electron ◽  
Resistive Load ◽  
Power Switching ◽  
Field Plate ◽  
Switching Power ◽  
Dislocation Densities ◽  
Extrinsic Base

The use of AlGaN / GaN HEMTs and HBTs for switching power supplies is explored. With its high electron velocities and breakdown fields, GaN has great potential for power switching. The field-plate HEMT increased breakdown voltages by 20% to 570V by reducing the peak field at the drain-side edge of the gate. The use of a gate insulator is also investigated, using both JVD SiO 2 and e-beam evaporated SiO 2 to reduce gate leakage, increasing breakdown voltages to 1050V and 1300V respectively. The power device figure of merit (FOM) for these devices: [Formula: see text], is the highest reported for switching devices. To reduce trapping effects, reactively sputtered SiN x, is used as a passivant, resulting in a switching time of less than 30 ns for devices blocking over 110V with a drain current of 1.4A under resistive load conditions. Dynamic load results are also presented. The development of HBTs for switching applications included the development of an etched emitter HBT with a selectively regrown extrinsic base. This was later improved upon with the selectively regrown emitter devices with current gains as high as 15. To improve breakdown in these devices, thick GaN layers were grown, reducing threading dislocation densities in the active layers. A further improvement included the use of a bevelled shallow etch and a lateral collector design to maximize device breakdown.

Status of GaN-Based Power Switching Devices

2008 ◽  
Vol 600-603 ◽  
pp. 1257-1262
Author(s):  
Masahiro Hikita ◽  
Hiroaki Ueno ◽  
Hisayoshi Matsuo ◽  
Tetsuzo Ueda ◽  
Yasuhiro Uemoto ◽  
...  
Keyword(s):  
Surface Passivation ◽  
Drain Current ◽  
Hole Injection ◽  
Power Switching ◽  
Channel Temperature ◽  
High Maximum ◽  
Technical Issues ◽  
State Breakdown ◽  
State Resistance ◽  
Heat Spreading

State-of-the-art technologies of GaN-based power switching transistors are reviewed, in which normally-off operation and heat spreading as technical issues. We demonstrate a new operation principle of GaN-based normally-off transistor called Gate Injection Transistor (GIT). The GIT utilizes hole-injection from p-AlGaN to AlGaN/GaN hetero-junction which increases electron density in the depleted channel resulting in dramatic increase of the drain current owing to conductivity modulation. The fabricated GIT on Si substrate exhibits the threshold voltage of +1.0V with high maximum drain current of 200mA/mm. The obtained on-state resistance (Ron·A) and off-state breakdown voltage (BVds) are 2.6mΩ·cm2 and 800V, respectively. These values are the best ones ever reported for GaN-based normally-off transistors. In addition, we propose the use of poly-AlN as surface passivation. The AlN has at least 200 times higher thermal conductivity than conventional SiN so that it can effectively reduce the channel temperature.

High-Breakdown-Voltage GaN Vertical Schottky Barrier Diodes with Field Plate Structure

2009 ◽  
Vol 615-617 ◽  
pp. 963-966 ◽  
Author(s):  
Taku Horii ◽  
Tomihito Miyazaki ◽  
Yu Saito ◽  
Shin Hashimoto ◽  
Tatsuya Tanabe ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Breakdown Voltage ◽  
Figure Of Merit ◽  
Schottky Barrier Diodes ◽  
Field Plate ◽  
Forward Current ◽  
Low Dislocation Density ◽  
Current Voltage ◽  
Dislocation Densities ◽  
Current Voltage Characteristics

Gallium nitride (GaN) vertical Schottky barrier diodes (SBDs) with a SiNx field plate (FP) structure on low-dislocation-density GaN substrates have been designed and fabricated. We have successfully achieved the SBD breakdown voltage (Vb) of 680V with the FP structure, in contrast to that of 400V without the FP structure. There was no difference in the forward current-voltage characteristics with a specific on-resistance (Ron) of 1.1mcm2. The figure of merit V2b/Ron of the SBD with the FP structure was 420MWcm-2. The FP structure and the high quality drift layers grown on the GaN substrates with low dislocation densities have greatly contributed to the obtained results.

500 K operation AlGaN/GaN HFETs with a large current and a high breakdown voltage

2006 ◽  
Vol 955 ◽  
Author(s):  
Hiroshi Kambayashi ◽  
Jiang Li ◽  
Nariaki Ikeda ◽  
Seikoh Yoshida
Keyword(s):  
Breakdown Voltage ◽  
Large Scale ◽  
Room Temperature ◽  
Drain Current ◽  
High Breakdown Voltage ◽  
Large Current ◽  
Drain Electrode ◽  
Current Operation ◽  
State Breakdown ◽  
State Resistance

ABSTRACTIt is reported that we demonstrated a large current operation AlGaN/GaN HFET with a low-on state resistance and a high breakdown voltage operation at room temperature and 500 K. We developed our unique ohmic electrode using Ti/AlSi/Mo. In addition, we investigated the dependence between the distance from the gate electrode to the drain electrode and the off-state breakdown voltage. As a result, the breakdown voltage of a unit HFET was over 1100 V. Furthermore, on the large scale HFET with the gate width of 240 mm, the maximum drain current of over 50 A was obtained at room temperature and also, that of over 25 A was obtained at 500 K. The off-state breakdown voltage was obtained about 800 V at room temperature and about 600 V at 500 K, although Si-based FETs can not operate in such a high temperature.

scholarly journals Enhancing Breakdown Voltage of a Ga2O3 Schottky Barrier Diode with Small-Angle Beveled and High-k Oxide Field Plate

2021 ◽  
Author(s):  
Dinghe Liu ◽  
Yuwen Huang ◽  
Zeyulin Zhang ◽  
Dazheng Chen ◽  
Qian Feng ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Breakdown Voltage ◽  
Small Angle ◽  
Dielectric Layer ◽  
Figure Of Merit ◽  
Field Plate ◽  
Breakdown Mechanism ◽  
High K ◽  
High K Dielectric ◽  
Drift Layer

Abstract To increase their breakdown voltage, Ga2O3 Schottky barrier diodes (SBDs) with a beveled field plate were designed based on TCAD platform simulations. The small-angle beveled field plate can effectively alleviate the electric field concentration effect. The breakdown voltage of Ga2O3 SBDs can reach 1217 V with the SiO2 dielectric and a small-angle (1°) beveled field plate. However, the breakdown mechanism is the early breakdown of the dielectric layer. TO further increase the breakdown voltage, the replacement of SiO2 with a high-k dielectric (Al2O3 and HfO2) can transfer the breakdown location into the Ga2O3 drift layer. By combining the beveled small-angle design and the high-k dielectric, the device demonstrates a Baliga’s figure of merit of 2.94 GW/cm2 and breakdown voltage of 3108V.

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