Improvement of water wettability of gray cotton fabric using electron beam irradiation and supercritical CO2 treatment

2021 ◽  
pp. 105506
Author(s):  
Heba Ghanayem ◽  
Satoko Okubayashi
Keyword(s):  
Electron Beam ◽  
Cotton Fabric ◽  
Supercritical Co2 ◽  
Electron Beam Irradiation ◽  
Beam Irradiation ◽  
Water Wettability ◽  
Co2 Treatment

Influence of sheet electron beam irradiation (SEBI) on water wettability of hydroxy apatites for artificial bone

1996 ◽  
Vol 463 ◽  
Author(s):  
J. Kawano ◽  
H. Izumi ◽  
K. Oguri ◽  
A. Tonegawa ◽  
T. Kawai ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Surface Condition ◽  
Rate Process ◽  
Artificial Bone ◽  
Beam Irradiation ◽  
Hydroxy Apatite ◽  
Water Wettability ◽  
Sheet Electron Beam ◽  
Bio Compatibility

ABSTRACTAn influence of sheet electron beam irradiation (SEBI) on the wettability is investigated of the hydroxy apatite (HAP) [Ca10(PO4)6(OH)2]. The wettability is one of the important factors to control bio-compatibility. The SEBI is homogeneously performed by an electrocurtain processor. The temperature of the sample is below 323 K just after the irradiation. The wettability is evaluated by measuring the wet angle θ in a drop of water. The SEBI increases the wettability. Based on rate process, the influence of SEBI on wettability is discussed. Using the SEBI, we can precisely control the surface condition of HAP.

Effect of Sheet Electron-Beam Irradiation (SEBI) on Water Wettability of Mirror-Finished Si Wafer

1997 ◽  
Vol 477 ◽  
Author(s):  
K. Mori ◽  
T. Okada ◽  
K. Oguri ◽  
Y. Nishi
Keyword(s):  
Contact Angle ◽  
Electron Beam ◽  
Interfacial Energy ◽  
Hydrofluoric Acid ◽  
Electron Beam Irradiation ◽  
Rate Process ◽  
Beam Irradiation ◽  
Water Wettability ◽  
Sheet Electron Beam ◽  
Si Wafer

ABSTRACTThe influence of sheet electron beam irradiation ( SEBI ) on the water-wettability of the ( 100 ) plane on the Si wafer etched by hydrofluoric acid ( HF ) is investigated. The wettability energy is estimated from the contact angle of water. The SEBI treatment decreases the contact angle and increases the interfacial energy. Aging decreases the change in the interfacial energy. A rate process is inferred for the interfacial energy changes on the Si wafer.

Methods to Monitor and Improve the Performance of Specimen Holders for Transmission Electron Cryomicroscopy

1996 ◽  
Vol 54 ◽  
pp. 454-455
Author(s):  
B. L. Armbruster ◽  
B. Kraus ◽  
M. Pan
Keyword(s):  
Electron Microscopy ◽  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Beam Irradiation ◽  
Quality Of Data ◽  
Electron Cryomicroscopy ◽  
Thermal Equilibration ◽  
Transmission Electron ◽  
Electron Microscopes

One goal in electron microscopy of biological specimens is to improve the quality of data to equal the resolution capabilities of modem transmission electron microscopes. Radiation damage and beam- induced movement caused by charging of the sample, low image contrast at high resolution, and sensitivity to external vibration and drift in side entry specimen holders limit the effective resolution one can achieve. Several methods have been developed to address these limitations: cryomethods are widely employed to preserve and stabilize specimens against some of the adverse effects of the vacuum and electron beam irradiation, spot-scan imaging reduces charging and associated beam-induced movement, and energy-filtered imaging removes the “fog” caused by inelastic scattering of electrons which is particularly pronounced in thick specimens.Although most cryoholders can easily achieve a 3.4Å resolution specification, information perpendicular to the goniometer axis may be degraded due to vibration. Absolute drift after mechanical and thermal equilibration as well as drift after movement of a holder may cause loss of resolution in any direction.

A Study of Electron Beam Irradiation Influence on Device Contact Junction Characteristics of Advanced DRAM Using Atomic Force Probing

2013 ◽  
Author(s):  
Wei-Chih Wang ◽  
Jian-Shing Luo
Keyword(s):  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Forward Bias ◽  
Irradiation Damage ◽  
Beam Irradiation ◽  
Excess Current ◽  
Atomic Force ◽  
Order Of Magnitude ◽  
Voltage Contrast ◽  
Acceleration Voltage

Abstract In this paper, we revealed p+/n-well and n+/p-well junction characteristic changes caused by electron beam (EB) irradiation. Most importantly, we found a device contact side junction characteristic is relatively sensitive to EB irradiation than its whole device characteristic; an order of magnitude excess current appears at low forward bias region after 1kV EB acceleration voltage irradiation (Vacc). Furthermore, these changes were well interpreted by our Monte Carlo simulation results, the Shockley-Read Hall (SRH) model and the Generation-Recombination (G-R) center trap theory. In addition, four essential examining items were suggested and proposed for EB irradiation damage origins investigation and evaluation. Finally, by taking advantage of the excess current phenomenon, a scanning electron microscope (SEM) passive voltage contrast (PVC) fault localization application at n-FET region was also demonstrated.

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