Deposition of high quality amorphous silicon, germanium and silicon-germanium thin films by a hollow cathode reactive sputtering system

2004 ◽  
Vol 177-178 ◽  
pp. 676-681 ◽  
Author(s):  
R.J. Soukup ◽  
N.J. Ianno ◽  
G. Pribil ◽  
Z. Hubicka
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Hollow Cathode ◽  
Silicon Germanium ◽  
Reactive Sputtering ◽  
High Quality ◽  
Amorphous Silicon Germanium ◽  
Sputtering System

The Effect of Plasma Power on the Properties of Amorphous Silicon-Germanium Thin Films

2011 ◽  
Vol 317-319 ◽  
pp. 341-344
Author(s):  
Long Gu ◽  
Hui Dong Yang ◽  
Bo Huang
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Deposition Rate ◽  
Silicon Germanium ◽  
Structural Characteristics ◽  
Chemical Vapor ◽  
Plasma Power ◽  
Glass Substrates ◽  
Frequency Plasma ◽  
Amorphous Silicon Germanium

Amorphous Silicon-germanium films were prepared by radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) on glass substrates. The structural characteristics, deposition rate, photosensitivity, and optical band gap of the silicon-germanium thin films were investigated with plasma power varying from 15W to 45W. The deposition rate increased within a certain range of plasma power. With the plasma power increasing, the photosensitivity of the thin films decreased. It is evident that varying the plasma power changes the deposition rate, photosensitivity, which was fundamentally crucial for the fabrication of a-Si/a-SiGe/a-SiGe stacked solar cells. For our deposition system, the most optimization value was 30-35W.

Hydrogenated amorphous silicon–germanium thin films with a narrow band gap for silicon-based solar cells

2011 ◽  
Vol 11 (1) ◽  
pp. S50-S53 ◽  
Author(s):  
Chao-Chun Wang ◽  
Chueh-Yang Liu ◽  
Shui-Yang Lien ◽  
Ko-Wei Weng ◽  
Jung-Jie Huang ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Amorphous Silicon ◽  
Band Gap ◽  
Silicon Germanium ◽  
Narrow Band ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Based ◽  
Amorphous Silicon Germanium ◽  
Hydrogenated Amorphous

Effect of Ge Incorporation on Hydrogenated Amorphous Silicon Germanium Thin Films Prepared by Plasma Enhanced Chemical Vapor Deposition

2012 ◽  
Vol 569 ◽  
pp. 27-30
Author(s):  
Bao Jun Yan ◽  
Lei Zhao ◽  
Ben Ding Zhao ◽  
Jing Wei Chen ◽  
Hong Wei Diao ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Silicon Germanium ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Dark Conductivity ◽  
Amorphous Silicon Germanium ◽  
Hydrogenated Amorphous

Hydrogenated amorphous silicon germanium thin films (a-SiGe:H) were prepared via plasma enhanced chemical vapor deposition (PECVD). By adjusting the flow rate of GeH4, a-SiGe:H thin films with narrow bandgap (Eg) were fabricated with high Ge incorporation. It was found that although narrow Eg was obtained, high Ge incorporation resulted in a great reduction of the thin film photosensitivity. This degradation was attributed to the increase of polysilane-(SiH2)n, which indicated a loose and disordered microstructure, in the films by systematically investigating the optical, optoelectronic and microstructure properties of the prepared a-SiGe:H thin films via transmission, photo/dark conductivity, Raman spectroscopy, and Fourier transform infrared spectroscopy (FTIR) measurements. Such investigation provided a helpful guide for further preparing narrow Eg a-SiGe:H materials with good optoelectronic properties.

Amorphous Silicon—Germanium Deposited by Photo—CVD

1985 ◽  
Vol 49 ◽  
Author(s):  
H. Itozaki ◽  
N. Fujita ◽  
H. Hitotsuyanagi
Keyword(s):  
Solar Cell ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Silicon Germanium ◽  
Chemical Vapor ◽  
High Quality ◽  
Transmission Electron ◽  
Amorphous Silicon Germanium ◽  
Hydrogenated Amorphous ◽  
Gas Ratio

AbstractHydrogenated amorphous silicon germanium (a—SiGe:H) films were deposited by photo—chemical vapor deposition (Photo—CVD) of SiH4 and GeH4 with mercury sensitizer. Their band gap was controlled from 0.9 eV to 1.9 eV by changing the gas ratio of SiH4 and GeH4. High quality opto—electrical properties have been obtained for thea—SiGe:H films by Photo—CVD. Hydrogen termination and microstructure of a-SiGe:H were investigated by infrared absorption and transmission electron microscopy. Ana—Si:H solar cell and an a—Si:H/a—SiGe:H stacked solar cell were made, each of which has conversion efficiency 5.3% and 5.1%, respectively.

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