Effects of an elastic substrate on the interfacial adhesion of thin films

2006 ◽  
Vol 200 (16-17) ◽  
pp. 5003-5008 ◽  
Author(s):  
Xian-Fang Li

2006 ◽  
Vol 21 (2) ◽  
pp. 505-511 ◽  
Author(s):  
Lili Hu ◽  
Junlan Wang ◽  
Zijian Li ◽  
Shuang Li ◽  
Yushan Yan

Nanoporous silica zeolite thin films are promising candidates for future generation low-dielectric constant (low-k) materials. During the integration with metal interconnects, residual stresses resulting from the packaging processes may cause the low-k thin films to fracture or delaminate from the substrates. To achieve high-quality low-k zeolite thin films, it is important to carefully evaluate their adhesion performance. In this paper, a previously reported laser spallation technique is modified to investigate the interfacial adhesion of zeolite thin film-Si substrate interfaces fabricated using three different methods: spin-on, seeded growth, and in situ growth. The experimental results reported here show that seeded growth generates films with the highest measured adhesion strength (801 ± 68 MPa), followed by the in situ growth (324 ± 17 MPa), then by the spin-on (111 ± 29 MPa). The influence of the deposition method on film–substrate adhesion is discussed. This is the first time that the interfacial strength of zeolite thin films-Si substrates has been quantitatively evaluated. This paper is of great significance for the future applications of low-k zeolite thin film materials.



2015 ◽  
Vol 584 ◽  
pp. 154-160 ◽  
Author(s):  
Chang-Chun Lee ◽  
Pal-Jen Wei ◽  
Bow-Tsin Chian ◽  
Chia-Hao Tsai ◽  
Yu-Hua Dzeng


2010 ◽  
Vol 25 (4) ◽  
pp. 728-734 ◽  
Author(s):  
Han Li ◽  
Nicholas X. Randall ◽  
Joost J. Vlassak

Indentation experiments on thin films are analyzed by using a rigorous solution to model elastic substrate effects. Two cases are discussed: elastic indentations where film and substrate are anisotropic and elastoplastic indentations where significant material pileup occurs. We demonstrate that the elastic modulus of a thin film can be accurately measured in both cases, even if there is significant elastic mismatch between film and substrate.



Materials ◽  
2004 ◽  
Author(s):  
Lili Hu ◽  
Junlan Wang ◽  
Zijian Li ◽  
Shuang Li ◽  
Yushan Yan

Nanoporous zeolite thin films are promising candidates as future low-k materials. During the integration with other semiconducting materials, the high stresses resulted from the synthesis process can cause the film to fracture or delaminate from the substrates. Evaluating the interfacial adhesion of zeolite thin films is very important in achieving high performance low-k materials. In this work, laser spallation technique is utilized to investigate the interfacial strength of zeolite thin films from three different synthesis processes. The preliminary results show that the fully crystalline zeolite thin films from hydro-thermal in-situ and seeded growth methods have a stronger interface than that from the spin-on process. Effort is also being made to compare the interfacial strength of the zeolite films between the two hydro-thermal methods. This is the first time that the interfacial strength of zeolite thin films is quantitatively evaluated. The results have great significance in the future applications of low-k zeolite thin films.



Author(s):  
Robert M. Fisher

Vapour deposited thin films are widely used for interconnections, insulators and other components in microelectronic semiconductor devices. Their mechanical and electrical properties as well as their adherence to substrates are strongly influenced by high internal streses that result from a pronounced columnar growth pattern of most thin films when deposition is at relatively low temperatures ie. 0.4 Tmp so that very little atom migration takes place. These stresses can cause cracking during deposition or during subsequent thermal or stress-activated relaxation and also can cause spontaneous delamination from the substrate. Effects clearly indicative of significant anisotropy in residual stresses in evaporated chromium films were observed during on-going studies of the primary factors determining interfacial adhesion.



2007 ◽  
Vol 353-358 ◽  
pp. 400-403
Author(s):  
Pu Lin Nie ◽  
Yao Shen ◽  
Jie Yang ◽  
Qiu Long Chen ◽  
Xun Cai

Cross-sectional nanoindentation (CSN) is a new method for measuring interface adhesion of thin films. The interfacial energy release rate (G), characterizing interfacial adhesion, is calculated from the material and geometrical parameters relevant to the test. Effects of residual stresses on G and crack tip phase angle Ψ, have been studied by finite element simulation in this study. The results show tensile residual stresses increase G and compressive stresses reduce it, and they have similar effects on the magnitude of Ψ.







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