Predictions and measurements of interfacial adhesion among encapsulated thin films of flexible devices

2015 ◽  
Vol 584 ◽  
pp. 154-160 ◽  
Author(s):  
Chang-Chun Lee ◽  
Pal-Jen Wei ◽  
Bow-Tsin Chian ◽  
Chia-Hao Tsai ◽  
Yu-Hua Dzeng
Keyword(s):  
Thin Films ◽  
Interfacial Adhesion ◽  
Flexible Devices

Interfacial adhesion of nanoporous zeolite thin films

2006 ◽  
Vol 21 (2) ◽  
pp. 505-511 ◽  
Author(s):  
Lili Hu ◽  
Junlan Wang ◽  
Zijian Li ◽  
Shuang Li ◽  
Yushan Yan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Interfacial Adhesion ◽  
Interfacial Strength ◽  
Future Generation ◽  
In Situ Growth ◽  
Seeded Growth ◽  
Si Substrates ◽  
Film Substrate

Nanoporous silica zeolite thin films are promising candidates for future generation low-dielectric constant (low-k) materials. During the integration with metal interconnects, residual stresses resulting from the packaging processes may cause the low-k thin films to fracture or delaminate from the substrates. To achieve high-quality low-k zeolite thin films, it is important to carefully evaluate their adhesion performance. In this paper, a previously reported laser spallation technique is modified to investigate the interfacial adhesion of zeolite thin film-Si substrate interfaces fabricated using three different methods: spin-on, seeded growth, and in situ growth. The experimental results reported here show that seeded growth generates films with the highest measured adhesion strength (801 ± 68 MPa), followed by the in situ growth (324 ± 17 MPa), then by the spin-on (111 ± 29 MPa). The influence of the deposition method on film–substrate adhesion is discussed. This is the first time that the interfacial strength of zeolite thin films-Si substrates has been quantitatively evaluated. This paper is of great significance for the future applications of low-k zeolite thin film materials.

scholarly journals Formation and Characterization of Various ZnO/SiO2-Stacked Layers for Flexible Micro-Energy Harvesting Devices

2018 ◽  
Vol 8 (7) ◽  
pp. 1127 ◽  
Author(s):  
Chongsei Yoon ◽  
Buil Jeon ◽  
Giwan Yoon
Keyword(s):  
Thin Films ◽  
Energy Harvesting ◽  
Indium Tin Oxide ◽  
Control Sample ◽  
Single Layer ◽  
Rf Magnetron Sputtering ◽  
Device Performance ◽  
Polyethylene Naphthalate ◽  
Flexible Devices ◽  
Energy Harvesting Devices

In this paper, we present a study of various ZnO/SiO2-stacked thin film structures for flexible micro-energy harvesting devices. Two groups of micro-energy harvesting devices, SiO2/ZnO/SiO2 micro-energy generators (SZS-MGs) and ZnO/SiO2/ZnO micro-energy generators (ZSZ-MGs), were fabricated by stacking both SiO2 and ZnO thin films, and the resulting devices were characterized. With a particular interest in the fabrication of flexible devices, all the ZnO and SiO2 thin films were deposited on indium tin oxide (ITO)-coated polyethylene naphthalate (PEN) substrates using a radio frequency (RF) magnetron sputtering technique. The effects of the thickness and/or position of the SiO2 films on the device performance were investigated by observing the variations of output voltage in comparison with that of a control sample. As a result, compared to the ZnO single-layer device, all the ZSZ-MGs showed much better output voltages, while all the SZS-MG showed only slightly better output voltages. Among the ZSZ-MGs, the highest output voltages were obtained from the ZSZ-MGs where the SiO2 thin films were deposited using a deposition power of 150 W. Overall, the device performance seems to depend significantly on the position as well as the thickness of the SiO2 thin films in the ZnO/SiO2-stacked multilayer structures, in addition to the processing conditions.

Lead-Free Piezoelectric (Ba,Ca)(Zr,Ti)O3 Thin Films for Biocompatible and Flexible Devices

2016 ◽  
Vol 9 (1) ◽  
pp. 266-278 ◽  
Author(s):  
N. D. Scarisoreanu ◽  
F. Craciun ◽  
V. Ion ◽  
R. Birjega ◽  
A. Bercea ◽  
...  
Keyword(s):  
Thin Films ◽  
Lead Free ◽  
Flexible Devices

Interfacial Adhesion of Nanoporous Zeolite Thin Films

Materials ◽  
2004 ◽  
Author(s):  
Lili Hu ◽  
Junlan Wang ◽  
Zijian Li ◽  
Shuang Li ◽  
Yushan Yan
Keyword(s):  
Thin Films ◽  
Interfacial Adhesion ◽  
High Performance ◽  
Interfacial Strength ◽  
Synthesis Process ◽  
Seeded Growth ◽  
Thermal Methods ◽  
Laser Spallation ◽  
First Time ◽  
Low K

Nanoporous zeolite thin films are promising candidates as future low-k materials. During the integration with other semiconducting materials, the high stresses resulted from the synthesis process can cause the film to fracture or delaminate from the substrates. Evaluating the interfacial adhesion of zeolite thin films is very important in achieving high performance low-k materials. In this work, laser spallation technique is utilized to investigate the interfacial strength of zeolite thin films from three different synthesis processes. The preliminary results show that the fully crystalline zeolite thin films from hydro-thermal in-situ and seeded growth methods have a stronger interface than that from the spin-on process. Effort is also being made to compare the interfacial strength of the zeolite films between the two hydro-thermal methods. This is the first time that the interfacial strength of zeolite thin films is quantitatively evaluated. The results have great significance in the future applications of low-k zeolite thin films.

Stress anisotropy and delamination of evaporated chromium films

1987 ◽  
Vol 45 ◽  
pp. 236-237
Author(s):  
Robert M. Fisher
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Residual Stresses ◽  
Low Temperatures ◽  
Interfacial Adhesion ◽  
Columnar Growth ◽  
Substrate Effects ◽  
Mechanical And Electrical Properties ◽  
Atom Migration ◽  
Chromium Films

Vapour deposited thin films are widely used for interconnections, insulators and other components in microelectronic semiconductor devices. Their mechanical and electrical properties as well as their adherence to substrates are strongly influenced by high internal streses that result from a pronounced columnar growth pattern of most thin films when deposition is at relatively low temperatures ie. 0.4 Tmp so that very little atom migration takes place. These stresses can cause cracking during deposition or during subsequent thermal or stress-activated relaxation and also can cause spontaneous delamination from the substrate. Effects clearly indicative of significant anisotropy in residual stresses in evaporated chromium films were observed during on-going studies of the primary factors determining interfacial adhesion.

Influence of Residual Stresses on the Interfacial Toughness Measurement by Cross-Sectional Nanoindentation

2007 ◽  
Vol 353-358 ◽  
pp. 400-403
Author(s):  
Pu Lin Nie ◽  
Yao Shen ◽  
Jie Yang ◽  
Qiu Long Chen ◽  
Xun Cai
Keyword(s):  
Thin Films ◽  
Finite Element ◽  
Residual Stresses ◽  
Interfacial Adhesion ◽  
Geometrical Parameters ◽  
Cross Sectional ◽  
Interfacial Toughness ◽  
Compressive Stresses ◽  
Element Simulation ◽  
Toughness Measurement

Cross-sectional nanoindentation (CSN) is a new method for measuring interface adhesion of thin films. The interfacial energy release rate (G), characterizing interfacial adhesion, is calculated from the material and geometrical parameters relevant to the test. Effects of residual stresses on G and crack tip phase angle Ψ, have been studied by finite element simulation in this study. The results show tensile residual stresses increase G and compressive stresses reduce it, and they have similar effects on the magnitude of Ψ.

scholarly journals Mechanical Behavior of Spin-Coated Sb2S3 light Absorption Thin Films

2021 ◽  
Vol 59 (1) ◽  
pp. 1-7
Author(s):  
Mao Zhang ◽  
Dayoung Yoo ◽  
Youngseon Jeon ◽  
Dongyun Lee
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Mechanical Properties ◽  
Light Absorption ◽  
Indentation Test ◽  
Flexible Devices ◽  
Heat Treated ◽  
Coating Method ◽  
Continuous Stiffness Measurement ◽  
Fto Glass

To measure the mechanical properties of Sb2S3, a two-component compound semiconductor used in the light absorption layer of a solar cell, Sb2S3 thin films were formed on FTO glass using the spin coating method. The spin-coated Sb2S3 thin films were heat-treated at 200 <sup>o</sup>C in an Ar atmosphere for up to 1 hour to form a thin film with continuous crystalline structures. A nanoindentation system was used to measure the mechanical properties of the spin-coated Sb2S3 thin films, and the phenomena appearing during indentation were analyzed. We used the continuous stiffness measurement (CSM) technique, and Young's modulus and hardness measured with the indentation depth of 250 nm were about 53.1 GPa and 1.43 GPa, respectively. The results were analyzed and compared with literature values, which varied from 40 GPa for the nanowire forms of Sb2S3 to 117 GPa, based upon simulation results. Since there are few studies on the mechanical properties of spin-coated Sb2S3 thin films, the results of this study are worthwhile. Besides, we observed that the Sb2S3 thin film had a little brittleness in the indentation test at higher load, and the microstructure was pushed around the indenter depending on the degree of bonding to the FTO glass substrate. This is a matter to be considered when making flexible devices in the future.

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