Influence of Residual Stresses on the Interfacial Toughness Measurement by Cross-Sectional Nanoindentation

2007 ◽  
Vol 353-358 ◽  
pp. 400-403
Author(s):  
Pu Lin Nie ◽  
Yao Shen ◽  
Jie Yang ◽  
Qiu Long Chen ◽  
Xun Cai
Keyword(s):  
Thin Films ◽  
Finite Element ◽  
Residual Stresses ◽  
Interfacial Adhesion ◽  
Geometrical Parameters ◽  
Cross Sectional ◽  
Interfacial Toughness ◽  
Compressive Stresses ◽  
Element Simulation ◽  
Toughness Measurement

Cross-sectional nanoindentation (CSN) is a new method for measuring interface adhesion of thin films. The interfacial energy release rate (G), characterizing interfacial adhesion, is calculated from the material and geometrical parameters relevant to the test. Effects of residual stresses on G and crack tip phase angle Ψ, have been studied by finite element simulation in this study. The results show tensile residual stresses increase G and compressive stresses reduce it, and they have similar effects on the magnitude of Ψ.

Modeling and Prediction of Residual Stresses in Additive Layer Manufacturing by Microplasma Transferred Arc Process Using Finite Element Simulation

2019 ◽  
Vol 141 (6) ◽  
Author(s):  
Sagar H. Nikam ◽  
N. K. Jain
Keyword(s):  
Residual Stress ◽  
Finite Element ◽  
Temperature Distribution ◽  
Residual Stresses ◽  
Substrate Material ◽  
Tensile Residual Stress ◽  
Additive Layer Manufacturing ◽  
Element Simulation ◽  
Layer Manufacturing ◽  
Transferred Arc

Prediction of residual stresses induced by any additive layer manufacturing process greatly helps in preventing thermal cracking and distortion formed in the substrate and deposition material. This paper presents the development of a model for the prediction of residual stresses using three-dimensional finite element simulation (3D-FES) and their experimental validation in a single-track and double-track deposition of Ti-6Al-4V powder on AISI 4130 substrate by the microplasma transferred arc (µ-PTA) powder deposition process. It involved 3D-FES of the temperature distribution and thermal cycles that were validated experimentally using three K-type thermocouples mounted along the deposition direction. Temperature distribution, thermal cycles, and residual stresses are predicted in terms of the µ-PTA process parameters and temperature-dependent properties of substrate and deposition materials. Influence of a number of deposition tracks on the residual stresses is also studied. Results reveal that (i) tensile residual stress is higher at the bonding between the deposition and substrate and attains a minimum value at the midpoint of a deposition track; (ii) maximum tensile residual stress occurs in the substrate material at its interface with deposition track. This primarily causes distortion and thermal cracks; (iii) maximum compressive residual stress occurs approximately at mid-height of the substrate material; and (iv) deposition of a subsequent track relieves tensile residual stress induced by the previously deposited track.

Influence of deposition parameters on the residual stresses of WC-Wo sputtered thin films

MRS Advances ◽  
2020 ◽  
Vol 5 (23-24) ◽  
pp. 1215-1223
Author(s):  
R.R. Phiri ◽  
O.P. Oladijo ◽  
E.T. Akinlabi
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Residual Stresses ◽  
Substrate Surface ◽  
Tribological Performance ◽  
X Ray Diffraction ◽  
X Ray ◽  
Compressive Stresses ◽  
Deposition Parameters ◽  
Cobalt Thin Films

AbstractControl and manipulation of residual stresses in thin films is a key for attaining coatings with high mechanical and tribological performance. It is therefore imperative to have reliable residual stress measurements methods to further understand the dynamics involved. The sin2ψ method of X-ray diffraction was used to investigate the residual stresses on the tungsten carbide cobalt thin films deposited on a mild steel surface to understand the how the deposition parameters influence the generation of residual stresses within the substrate surface. X-ray spectra of the surface revealed an amorphous phase of the thin film therefore the stress measured was of the substrate surface and the effects of sputtering parameters on residual stress were analysed. Compressive stresses were identified within all samples studied. The results reveal that as the sputtering parameters are varied, the residual stresses also change. Optimum deposition parameters in terms of residual stresses were suggested.

Study on the Correlativity between Grinding Parameters and Surface Residual Stresses in Ceramic

2008 ◽  
Vol 375-376 ◽  
pp. 480-484 ◽  
Author(s):  
Guang Xiu Zhang ◽  
Bin Lin ◽  
Zhen Peng Shi
Keyword(s):  
Residual Stress ◽  
Finite Element ◽  
Residual Stresses ◽  
Mechanical Effect ◽  
Diffraction Measurement ◽  
Depth Of Penetration ◽  
Surface Residual Stress ◽  
Grinding Parameters ◽  
Surface Residual Stresses ◽  
Element Simulation

The generation and distribution of workpiece surface and sub-surface residual stress were predicted through the dynamic finite element simulation of the grinding ceramic process. The base of the simulation is that the thermo elastic-plastic finite element theory and the coupling of grinding forces and temperature were adopted. The results obtained from X-ray diffraction measurement compared well with the values calculated from theory. The correlation between grinding parameters and the ceramic residual stresses was investigated. The research results show that the normal grinding force is the primary factor responsible for the generation of residual stress in grinding ceramic. The mechanical effect of the grains is to affect the magnitude, the depth of penetration and the gradient of the residual stresses.

Characterization of Mechanical Properties of Thin Films by Nanoindentation Technique and Finite Element Simulation

2002 ◽  
Author(s):  
Zhaohui Shan ◽  
Suresh K. Sitaraman
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Mechanical Properties ◽  
Finite Element ◽  
Strain Hardening Exponent ◽  
Plastic Properties ◽  
Titanium Thin Film ◽  
Nanoindentation Technique ◽  
Element Simulation ◽  
Titanium Thin Films

Titanium thin films have been widely used in microelectronics due to their good adhesion to substrates, such as Silicon wafer and Quartz. However, mechanical behavior of Titanium thin films has not been well characterized. This paper presents a methodology that combines the nanoindentation technique and finite element modeling to characterize the mechanical (elastic and plastic) properties of thin film with its application on Titanium thin film deposited on silicon substrate. The results show that the elastic properties (Young’s modulus) of the Titanium thin film does not change much from the bulk Titanium, and the plastic properties (yield stress and strain hardening exponent) of the Titanium thin film are higher than those of bulk Titanium. This method is also applicable for the study of mechanical properties of other thin films and small volume materials.

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