Investigation of deposition characteristics and properties of high-rate deposited silicon nitride films prepared by atmospheric pressure plasma chemical vapor deposition

2005 ◽  
Vol 479 (1-2) ◽  
pp. 17-23 ◽  
Author(s):  
H. Kakiuchi ◽  
Y. Nakahama ◽  
H. Ohmi ◽  
K. Yasutake ◽  
K. Yoshii ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Atmospheric Pressure Plasma ◽  
Chemical Vapor ◽  
High Rate ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Silicon Nitride Films

Preparation of Plasma Chemical Vapor Deposition Silicon Nitride Films from SiH2F2and NH3Source Gases

1991 ◽  
Vol 30 (Part 2, No. 4A) ◽  
pp. L619-L621 ◽  
Author(s):  
Nobuaki Watanabe ◽  
Mamoru Yoshida ◽  
Yi-Chao Jiang ◽  
Tutomu Nomoto ◽  
Ichimatsu Abiko
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Silicon Nitride Films
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