High-rate Deposition of Amorphous Silicon Film by Atmospheric Pressure Plasma Chemical Vapor Deposition. (2nd Report). Investigation for Higher Deposition Rate.

Journal of the Japan Society for Precision Engineering ◽

10.2493/jjspe.66.1636 ◽

2000 ◽

Vol 66 (10) ◽

pp. 1636-1640

Author(s):

Yuzo MORI ◽

Kumayasu YOSHII ◽

Kiyoshi YASUTAKE ◽

Motohiro NAKANO ◽

Hiroaki KAKIUCHI ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Atmospheric Pressure ◽

Silicon Film ◽

Atmospheric Pressure Plasma ◽

Chemical Vapor ◽

High Rate ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition ◽

Amorphous Silicon Film

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Effect of hydrogen on the structure of high-rate deposited SiC on Si by atmospheric pressure plasma chemical vapor deposition using high-power-density condition

Thin Solid Films ◽

10.1016/j.tsf.2005.08.338 ◽

2006 ◽

Vol 496 (2) ◽

pp. 259-265 ◽

Author(s):

H. Kakiuchi ◽

H. Ohmi ◽

M. Aketa ◽

K. Yasutake ◽

K. Yoshii ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Atmospheric Pressure ◽

Atmospheric Pressure Plasma ◽

Chemical Vapor ◽

High Rate ◽

High Power Density ◽

Density Condition ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition

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High-Rate Deposition of Amorphous Silicon Films by Atmospheric-Pressure Plasma Chemical Vapor Deposition

Crystal Growth Technology ◽

10.1002/0470871687.ch29 ◽

2004 ◽

pp. 645-652 ◽

Author(s):

Yuzo Mori ◽

Hiroaki Kakiuchi ◽

Kumayasu Yoshii ◽

Kiyoshi Yasutake

Keyword(s):

Chemical Vapor Deposition ◽

Amorphous Silicon ◽

Vapor Deposition ◽

Atmospheric Pressure ◽

Atmospheric Pressure Plasma ◽

Chemical Vapor ◽

High Rate ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition ◽

Pressure Plasma

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Atmospheric pressure plasma chemical vapor deposition system for high-rate deposition of functional materials

Review of Scientific Instruments ◽

10.1063/1.1305510 ◽

2000 ◽

Vol 71 (8) ◽

pp. 3173-3177 ◽

Author(s):

Y. Mori ◽

K. Yoshii ◽

H. Kakiuchi ◽

K. Yasutake

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Atmospheric Pressure ◽

Atmospheric Pressure Plasma ◽

Chemical Vapor ◽

Functional Materials ◽

High Rate ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition ◽

Pressure Plasma

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Investigation of deposition characteristics and properties of high-rate deposited silicon nitride films prepared by atmospheric pressure plasma chemical vapor deposition

Thin Solid Films ◽

10.1016/j.tsf.2004.11.104 ◽

2005 ◽

Vol 479 (1-2) ◽

pp. 17-23 ◽

Author(s):

H. Kakiuchi ◽

Y. Nakahama ◽

H. Ohmi ◽

K. Yasutake ◽

K. Yoshii ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Silicon Nitride ◽

Vapor Deposition ◽

Atmospheric Pressure ◽

Atmospheric Pressure Plasma ◽

Chemical Vapor ◽

High Rate ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition ◽

Silicon Nitride Films

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High-Rate Deposition of Amorphous SiC Films by Atmospheric Pressure Plasma Chemical Vapor Deposition (2nd Report)

Journal of the Japan Society for Precision Engineering Contributed Papers ◽

10.2493/jspe.70.1075 ◽

2004 ◽

Vol 70 (8) ◽

pp. 1075-1079

Author(s):

Hiroaki KAKIUCHI ◽

Hiromasa OHMI ◽

Koichi NAKAZAWA ◽

Kiyoshi YASUTAKE ◽

Kumayasu YOSHII ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Atmospheric Pressure ◽

Atmospheric Pressure Plasma ◽

Chemical Vapor ◽

High Rate ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition ◽

Amorphous Sic ◽

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High-rate growth of epitaxial silicon at low temperatures (530–690 °C) by atmospheric pressure plasma chemical vapor deposition

Thin Solid Films ◽

10.1016/s0040-6090(03)01148-9 ◽

2003 ◽

Vol 444 (1-2) ◽

pp. 138-145 ◽

Author(s):

Y. Mori ◽

K. Yoshii ◽

K. Yasutake ◽

H. Kakiuchi ◽

H. Ohmi ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Atmospheric Pressure ◽

Low Temperatures ◽

Atmospheric Pressure Plasma ◽

Chemical Vapor ◽

High Rate ◽

Epitaxial Silicon ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition

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High-Rate Deposition of Amorphous SiC Films by Atmospheric Pressure Plasma Chemical Vapor Deposition. (1st Report). Examination of Deposition Rate and Film Structure.

Journal of the Japan Society for Precision Engineering ◽

10.2493/jjspe.66.907 ◽

2000 ◽

Vol 66 (6) ◽

pp. 907-911

Author(s):

Yuzo MORI ◽

Hiroaki KAKIUCHI ◽

Kumayasu YOSHII ◽

Kiyoshi YASUTAKE

Keyword(s):

Vapor Deposition ◽

Atmospheric Pressure ◽

Atmospheric Pressure Plasma ◽

Chemical Vapor ◽

Film Structure ◽

High Rate ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition ◽

Amorphous Sic ◽

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Effect of Ar+Ion Bombardment During Hydrogenated Amorphous Silicon Film Growth in Plasma Chemical Vapor Deposition System

Japanese Journal of Applied Physics ◽

10.1143/jjap.39.6404 ◽

2000 ◽

Vol 39 (Part 1, No. 11) ◽

pp. 6404-6409 ◽

Author(s):

Isamu Kato ◽

Yuuki Nakano ◽

Nobuhiko Yamaguchi

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Film Growth ◽

Silicon Film ◽

Hydrogenated Amorphous Silicon ◽

Chemical Vapor ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition ◽

Amorphous Silicon Film ◽

Hydrogenated Amorphous

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Characterization of Epitaxial Si Films Grown by Atmospheric Pressure Plasma Chemical Vapor Deposition Using Cylindrical Rotary Electrode

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.3592 ◽

2006 ◽

Vol 45 (4B) ◽

pp. 3592-3597 ◽

Author(s):

Kiyoshi Yasutake ◽

Hiromasa Ohmi ◽

Hiroaki Kakiuchi ◽

Takuya Wakamiya ◽

Heiji Watanabe

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Atmospheric Pressure ◽

Atmospheric Pressure Plasma ◽

Chemical Vapor ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition ◽

Pressure Plasma ◽

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Defect-free growth of epitaxial silicon at low temperatures (500–800 °C) by atmospheric pressure plasma chemical vapor deposition

Applied Physics A ◽

10.1007/s00339-004-3198-5 ◽

2005 ◽

Vol 81 (6) ◽

pp. 1139-1144 ◽

Author(s):

K. Yasutake ◽

H. Kakiuchi ◽

H. Ohmi ◽

K. Yoshii ◽

Y. Mori

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Atmospheric Pressure ◽

Low Temperatures ◽

Atmospheric Pressure Plasma ◽

Chemical Vapor ◽

Epitaxial Silicon ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition ◽

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