Remote nitrogen microwave plasma chemical vapor deposition from a tetramethyldisilazane precursor. 2. Properties of deposited silicon carbonitride films

Thin Solid Films ◽

10.1016/j.tsf.2005.09.191 ◽

2006 ◽

Vol 497 (1-2) ◽

pp. 35-41 ◽

Author(s):

I. Blaszczyk-Lezak ◽

A.M. Wrobel ◽

D.M. Bielinski

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Microwave Plasma ◽

Chemical Vapor ◽

Silicon Carbonitride ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition

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Remote hydrogen microwave plasma chemical vapor deposition of silicon carbonitride films from a (dimethylamino)dimethylsilane precursor: Characterization of the process, chemical structure, and surface morphology of the films

Diamond and Related Materials ◽

10.1016/j.diamond.2005.11.011 ◽

2006 ◽

Vol 15 (9) ◽

pp. 1484-1491 ◽

Author(s):

I. Blaszczyk-Lezak ◽

A.M. Wrobel ◽

M.P.M. Kivitorma ◽

I.J. Vayrynen ◽

T. Aoki

Keyword(s):

Chemical Vapor Deposition ◽

Surface Morphology ◽

Vapor Deposition ◽

Chemical Structure ◽

Microwave Plasma ◽

Chemical Vapor ◽

Silicon Carbonitride ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition

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Remote hydrogen microwave plasma chemical vapor deposition of silicon carbonitride films from a (dimethylamino)dimethylsilane precursor: Compositional and structural dependencies of film properties

Diamond and Related Materials ◽

10.1016/j.diamond.2006.01.019 ◽

2006 ◽

Vol 15 (10) ◽

pp. 1650-1658 ◽

Author(s):

I. Blaszczyk-Lezak ◽

A.M. Wrobel ◽

D.M. Bielinski

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Microwave Plasma ◽

Chemical Vapor ◽

Silicon Carbonitride ◽

Plasma Chemical ◽

Film Properties ◽

Plasma Chemical Vapor Deposition

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Remote Hydrogen Microwave Plasma Chemical Vapor Deposition of Amorphous Silicon Carbonitride (a-SiCN) Coatings Derived From Tris(dimethylamino)Silane

Plasma Processes and Polymers ◽

10.1002/ppap.201000203 ◽

2011 ◽

Vol 8 (6) ◽

pp. 542-556 ◽

Author(s):

Aleksander M. Wrobel ◽

Iwona Blaszczyk-Lezak ◽

Pawel Uznanski ◽

Bartosz Glebocki

Keyword(s):

Chemical Vapor Deposition ◽

Amorphous Silicon ◽

Vapor Deposition ◽

Microwave Plasma ◽

Chemical Vapor ◽

Silicon Carbonitride ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition

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Remote nitrogen microwave plasma chemical vapor deposition from a tetramethyldisilazane precursor. 1. Growth mechanism, structure, and surface morphology of silicon carbonitride films

Thin Solid Films ◽

10.1016/j.tsf.2005.09.192 ◽

2006 ◽

Vol 497 (1-2) ◽

pp. 24-34 ◽

Author(s):

I. Blaszczyk-Lezak ◽

A.M. Wrobel ◽

T. Aoki ◽

Y. Nakanishi ◽

I. Kucinska ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Surface Morphology ◽

Growth Mechanism ◽

Vapor Deposition ◽

Microwave Plasma ◽

Chemical Vapor ◽

Silicon Carbonitride ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition

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HIGH RATE DEPOSITION OF HYDROGENATED AMORPHOUS SILICON USING MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION PROCESS

Le Journal de Physique Colloques ◽

10.1051/jphyscol:1989578 ◽

1989 ◽

Vol 50 (C5) ◽

pp. C5-667-C5-672

Author(s):

DING-KUN PENG ◽

CHUN-LIN WANG ◽

GUANG-YAO MENG

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Microwave Plasma ◽

Hydrogenated Amorphous Silicon ◽

Chemical Vapor ◽

Deposition Process ◽

High Rate ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition ◽

Hydrogenated Amorphous

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Self-Organized Microcones Grown on Si Substrate by Microwave Plasma Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.3050 ◽

2008 ◽

Vol 47 (4) ◽

pp. 3050-3052

Author(s):

Masataka Moriya ◽

Yuji Matsumoto ◽

Yoshinao Mizugaki ◽

Tadayuki Kobayashi ◽

Kouichi Usami

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Microwave Plasma ◽

Chemical Vapor ◽

Si Substrate ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition ◽

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Crystalline carbon nitride thin films deposited by microwave plasma chemical vapor deposition

Chinese Physics ◽

10.1088/1009-1963/9/7/015 ◽

2000 ◽

Vol 9 (7) ◽

pp. 545-549

Author(s):

Zhang Yong-ping ◽

Gu You-song ◽

Chang Xiang-rong ◽

Tian Zhong-zhuo ◽

Shi Dong-xia ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Carbon Nitride ◽

Microwave Plasma ◽

Chemical Vapor ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition

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Lateral outward growth of single-crystal diamond by two different structures of microwave plasma reactors

CrystEngComm ◽

10.1039/d1ce01373d ◽

2022 ◽

Author(s):

Wei Cao ◽

Zhibin Ma ◽

Hongyang Zhao ◽

Deng Gao ◽

Qiuming Fu

Keyword(s):

Chemical Vapor Deposition ◽

Single Crystal ◽

Vapor Deposition ◽

Microwave Plasma ◽

Chemical Vapor ◽

Lateral Growth ◽

Plasma Reactors ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition ◽

Single Crystal Diamond

On a semi-open holder, the homoepitaxial lateral growth of single-crystal diamond (SCD) was carried out via microwave plasma chemical vapor deposition (MPCVD). By tuning and optimizing two different structures of...

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The effect of pressure on growth rate and quality of diamond films prepared by microwave plasma chemical vapor deposition

Acta Physica Sinica ◽

10.7498/aps.56.7183 ◽

2007 ◽

Vol 56 (12) ◽

pp. 7183

Author(s):

物理学报

Keyword(s):

Growth Rate ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Microwave Plasma ◽

Diamond Films ◽

Chemical Vapor ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition ◽

Effect Of Pressure

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Deposition of smooth, oriented diamond films using microwave plasma chemical vapor deposition

Thin Solid Films ◽

10.1016/0040-6090(92)90512-a ◽

1992 ◽

Vol 212 (1-2) ◽

pp. 140-149 ◽

Author(s):

F.G. Celii ◽

D. White ◽

A.J. Purdes

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Microwave Plasma ◽

Diamond Films ◽

Chemical Vapor ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition

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