The influence of the carbon precursor, carbon feed rate and helium gas flow rate on the synthesis of fullerenes from carbon powder in an entrained flow 3-phase AC plasma reactor operating at atmospheric pressure

Carbon ◽  
2012 ◽  
Vol 50 (12) ◽  
pp. 4524-4533 ◽  
Author(s):  
L. Fulcheri ◽  
F. Fabry ◽  
V. Rohani
Keyword(s):  
Flow Rate ◽  
Feed Rate ◽  
Atmospheric Pressure ◽  
Gas Flow ◽  
Plasma Reactor ◽  
Carbon Powder ◽  
Carbon Precursor ◽  
Gas Flow Rate ◽  
Helium Gas ◽  
Reactor Operating

Degradation of Organophosphorus Pesticide in a Packed-Bed Plasma Reactor: Effects of Operating Parameters and Kinetics Study

2013 ◽  
Vol 781-784 ◽  
pp. 1637-1645 ◽  
Author(s):  
Ting Jun Ma ◽  
Yi Qing Xu
Keyword(s):  
Removal Efficiency ◽  
Flow Rate ◽  
Gas Flow ◽  
Plasma Reactor ◽  
Organophosphorus Pesticide ◽  
Packed Bed ◽  
Pulse Frequency ◽  
Gas Flow Rate ◽  
Peak Voltage ◽  
Initial Concentration

The degradation effectiveness and reaction kinetics of representative organophosphorus (OP) pesticide in a packed-bed plasma reactor have been studied. Important parameters, including peak voltage, pulse frequency, gas-flow rate, initial concentration, diameter of catalyst particles, and thickness of catalyst bed which influences the removal efficiency, were investigated. Experimental results indicated that rogor removal efficiency as high as 80% can be achieved at 35 kV with the gas flow rate of 800 mL/min and initial concentration of 11.2 mg/m3.The removal efficiency increased with the increase of pulsed high voltage, and pulse frequency, the decrease of the diameter of catalyst particles and the thickness of catalyst bed. Finally, a model was established to predict the degradation of the rogor, which generally can simulate the experimental measurements to some degree.

Facile growth of centimeter-sized single-crystal graphene on copper foil at atmospheric pressure

2015 ◽  
Vol 3 (15) ◽  
pp. 3530-3535 ◽  
Author(s):  
Jing Li ◽  
Xuan-Yun Wang ◽  
Xing-Rui Liu ◽  
Zhi Jin ◽  
Dong Wang ◽  
...  
Keyword(s):  
Single Crystal ◽  
Flow Rate ◽  
Atmospheric Pressure ◽  
Copper Foil ◽  
Gas Flow ◽  
Gas Flow Rate ◽  
Single Crystalline ◽  
Slowing Down ◽  
Cu Foil

By mildly oxidizing Cu foil and slowing down the gas flow rate, centimeter-sized single-crystalline graphene was grown on Cu at atmospheric pressure.

OPTIMIZATION OF NON THERMAL PLASMA REACTOR PERFORMANCE FOR THE DECOMPOSITION OF XYLENE

2016 ◽  
Vol 78 (8) ◽  
Author(s):  
Nor Faraliana Shazwani Nor Azmi ◽  
Abdullahi Mohammed Evuti ◽  
Mohd Ariffin Abu Hassan ◽  
R. K. Raja Ibrahim
Keyword(s):  
Flow Rate ◽  
Thermal Plasma ◽  
Applied Voltage ◽  
Gas Flow ◽  
Plasma Reactor ◽  
Gas Flow Rate ◽  
Reactor Performance ◽  
Model Predictions ◽  
Non Thermal Plasma ◽  
Discharge Gap

Non Thermal Plasma (NTP) is an emerging method used for the decomposition of volatile organic compounds (VOCs). This research focuses on the optimization of NTP reactor performance for decomposition of xylene from wastewater using response surface methodology (RSM) by operating the NTP reactor at applied voltage of 12-15 kV, discharge gap of 2.0-3.0 cm and gas flow rate of 2.0-5.0 L/min. An optimum xylene removal efficiency of 81.98% was obtained at applied voltage 15kV, discharge gap 2.09cm and gas flow rate at 2.36 L/min. The experimental removal efficiencies and model predictions were in close agreement with an error of 0.63%. 

Effects of gas flow rate on diamond deposition in a microwave plasma reactor

2006 ◽  
Vol 515 (4) ◽  
pp. 1970-1975 ◽  
Author(s):  
W. Chen ◽  
X. Lu ◽  
Q. Yang ◽  
C. Xiao ◽  
R. Sammynaiken ◽  
...  
Keyword(s):  
Flow Rate ◽  
Gas Flow ◽  
Microwave Plasma ◽  
Plasma Reactor ◽  
Gas Flow Rate ◽  
Diamond Deposition

Uniform Ultra-Thin Oxides Grown by Rapid Thermal Oxidation of Silicon in N2O Ambient

1997 ◽  
Vol 470 ◽  
Author(s):  
G. C. Xing ◽  
D. Lopes ◽  
G. E. Miner
Keyword(s):  
Thermal Oxidation ◽  
Process Parameters ◽  
Flow Rate ◽  
Atmospheric Pressure ◽  
Gas Flow ◽  
Rotation Speed ◽  
Oxide Thickness ◽  
Gas Flow Rate ◽  
Rapid Thermal Oxidation ◽  
Nitrogen Concentrations

ABSTRACTIn this paper, we report the study of rapid thermal oxidation of silicon in N2O ambient using the Applied Materials RTP Centura rapid thermal processor, and N2O oxide thickness and compositional uniformities with respect to gas flow rate and wafer rotation speed as well as other process parameters. It was found that N2O oxide uniformity is strongly dependent on gas flow rate and wafer rotation speed in addition to process pressure. With optimized setting of the process parameters, excellent oxidation uniformities (one sigma < 1%) were obtained at atmospheric pressure N2O ambient. Nitrogen concentrations of such uniform oxides grown at 1050°C atmospheric pressure N2O oxidation processes were 1.7% for a 40Å oxide and 2.5% for a 60Å oxide, respectively, as characterized by SIMS analysis.

The effect of methane gas flow rate on the streamer propagation in an atmospheric-pressure methane-air plasma jet

2018 ◽  
Vol 25 (9) ◽  
pp. 093508 ◽  
Author(s):  
Jinsong Kang ◽  
Muyang Qian ◽  
Gui Li ◽  
Sanqiu Liu ◽  
Chunsheng Ren ◽  
...  
Keyword(s):  
Flow Rate ◽  
Atmospheric Pressure ◽  
Gas Flow ◽  
Plasma Jet ◽  
Air Plasma ◽  
Gas Flow Rate ◽  
Methane Gas ◽  
Streamer Propagation

Investigation of a Plasma Jet Generated by High Voltage Discharge at Atmospheric Pressure

2011 ◽  
Vol 383-390 ◽  
pp. 5907-5911 ◽  
Author(s):  
Xue Chen Li ◽  
Ning Yuan ◽  
Peng Ying Jia
Keyword(s):  
Flow Rate ◽  
High Voltage ◽  
Discharge Current ◽  
Applied Voltage ◽  
Atmospheric Pressure ◽  
Gas Flow ◽  
Plasma Plume ◽  
Gas Temperature ◽  
Gas Flow Rate ◽  
Uniform Plasma

Appling a high voltage to the dielectric barrier discharge device in a coaxial geometry in flowing argon, a uniform plasma plume is generated at one atmospheric pressure. The waveforms of discharge current and the applied voltage are investigated and results indicate that both the intensity and duration width of the discharge current pulse increase with increasing the applied voltage. The gas temperature of the plasma plume is investigated by using an infrared thermometer. The gas temperature of the plasma plume are functions of gas flow rate, peak value and the frequency of the applied voltage. Results show that the gas temperature increases with increasing the applied voltage or its frequency, while it decreases with increasing the gas flow rate. A qualitative explanation is given for the variance of gas temperature as functions of the experimental parameters by analyzing the waveforms of the discharge current and the applied voltage.

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