Metal-oxide–semiconductor characteristics of thermally grown nitrided SiO2 thin film on 4H-SiC in various N2O ambient
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2000 ◽
Vol 47
(8)
◽
pp. 838-843
1997 ◽
Vol 36
(Part 1, No. 5A)
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pp. 2565-2570
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1993 ◽
Vol 32
(Part 1, No. 11A)
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pp. 4916-4922
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1992 ◽
Vol 10
(6)
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pp. 2954
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