Formation and optimization of undercut-microholes in InGaN light emitting diodes by using wet chemical etching

2012 ◽  
Vol 520 (13) ◽  
pp. 4373-4377 ◽  
Author(s):  
Hyun-Kyu Kim ◽  
Jae-Hyoung Ryu ◽  
Hee-Yun Kim ◽  
Ji-Hye Kang ◽  
Nam Han ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Wet Chemical ◽  
Wet Chemical Etching

scholarly journals Revealing the Role of Sidewall Orientation in Wet Chemical Etching of GaN-Based Ultraviolet Light-Emitting Diodes

Nanomaterials ◽  
2019 ◽  
Vol 9 (3) ◽  
pp. 365 ◽  
Author(s):  
Hui Wan ◽  
Bin Tang ◽  
Ning Li ◽  
Shengjun Zhou ◽  
Chengqun Gui ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Light Output ◽  
Light Output Power ◽  
Light Emitting ◽  
Wet Chemical ◽  
Wet Chemical Etching ◽  
Crystallographic Planes ◽  
Ultraviolet Light Emitting Diodes ◽  
Tmah Solution

We demonstrated that the tetramethylammonium hydroxide (TMAH) solution possesses different etching abilities to the chip sidewalls with different orientations because the orientation of chip sidewall determines the exposed crystallographic plane of gallium nitride (GaN) and these crystallographic planes are with different chemical stability to the TMAH solution. After TMAH etching treatment, trigonal prisms were observed on sidewalls where m-plane GaN was exposed. For the investigated two types of light-emitting diodes (LEDs) with orthogonal arrangements, the LEDs with their larger sidewalls orientated along the [11–20] direction exhibited an additional 10% improvement in light output power after TMAH etching treatment compared to the LEDs with larger sidewalls orientated along the [1–100] direction.

Decapsulation Techniques for Cu Wire Bonding Package

2009 ◽  
Author(s):  
Dongmei Meng ◽  
Joe Rupley ◽  
Chris McMahon
Keyword(s):  
Laser Ablation ◽  
Thin Layer ◽  
Chemical Etching ◽  
Wire Bonding ◽  
Methods And Techniques ◽  
Wet Chemical ◽  
Wet Chemical Etching ◽  
Reliability Issue ◽  
Etch Time ◽  
Device Technology

Abstract This paper presents decapsulation solutions for devices bonded with Cu wire. By removing mold compound to a thin layer using a laser ablation tool, Cu wire bonded packages are decapsulated using wet chemical etching by controlling the etch time and temperature. Further, the paper investigates the possibilities of decapsulating Cu wire bonded devices using full wet chemical etches without the facilitation of laser ablation removing much of mold compound. Additional discussion on reliability concerns when evaluating Cu wirebond devices is addressed here. The lack of understanding of the reliability of Cu wire bonded packages creates a challenge to the FA engineer as they must develop techniques to help understanding the reliability issue associated with Cu wire bonding devices. More research and analysis are ongoing to develop appropriate analysis methods and techniques to support the Cu wire bonding device technology in the lab.

scholarly journals Controlling the Facet of ZnO during Wet Chemical Etching Its (0001) O‐Terminated Surface

Small ◽  
2020 ◽  
Vol 16 (51) ◽  
pp. 2007045
Author(s):  
Mei Sun ◽  
Bocheng Yu ◽  
Mengyu Hong ◽  
Zhiwei Li ◽  
Fengjiao Lyu ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Wet Chemical ◽  
Wet Chemical Etching

scholarly journals In Situ Study of the Wet Chemical Etching of SiO2 and Nanoparticle@SiO2 Core–Shell Nanospheres

2021 ◽  
Author(s):  
Albert Grau-Carbonell ◽  
Sina Sadighikia ◽  
Tom A. J. Welling ◽  
Relinde J. A. van Dijk-Moes ◽  
Ramakrishna Kotni ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Core Shell ◽  
In Situ Study ◽  
Wet Chemical ◽  
Wet Chemical Etching

Controllable end shape modification of ZnO nano-arrays/rods by a simple wet chemical etching technique

2015 ◽  
Vol 48 (36) ◽  
pp. 365303 ◽  
Author(s):  
Jingchang Sun ◽  
Ting Zhao ◽  
Zhangwei Ma ◽  
Ming Li ◽  
Cheng Chang ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Shape Modification ◽  
Etching Technique ◽  
Wet Chemical ◽  
Wet Chemical Etching
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