Comparison of the structural properties and residual stress of AlN films deposited by dc magnetron sputtering and high power impulse magnetron sputtering at different working pressures

2014 ◽  
Vol 550 ◽  
pp. 264-267 ◽  
Author(s):  
K. Ait Aissa ◽  
A. Achour ◽  
J. Camus ◽  
L. Le Brizoual ◽  
P.-Y. Jouan ◽  
...  
2015 ◽  
Vol 662 ◽  
pp. 107-110 ◽  
Author(s):  
Michal Novák ◽  
František Lofaj ◽  
Petra Hviščová ◽  
Rudolf Podoba ◽  
Marián Haršáni ◽  
...  

The effects of residual stresses in thin W-C based coatings were investigated with the aim to find their influence on nanohardness and indentation modulus. Ten samples of W-C based coatings were deposited on microslide glass substrates using DC magnetron sputtering at the identical deposition parameters. Their thickness was in the range from 500 to 600 nm. The residual stresses in the coatings varied from 1.5 GPa up to 4.4 GPa. Increase of residual stress caused linear increase of HITfrom 16 to 19.5 GPa. This increase was only the result of the compressive stresses. EITof the studied coatings was not sensitive to residual stresses and corresponded to 185 GPa ± 15 GPa.


2019 ◽  
Vol 1393 ◽  
pp. 012127
Author(s):  
V A Semenov ◽  
A S Grenadyorov ◽  
V O Oskirko ◽  
A N Zakharov ◽  
S V Rabotkin ◽  
...  

1994 ◽  
Vol 360 ◽  
Author(s):  
G.R. Fox ◽  
D. Damjanovic ◽  
P.A. Danai ◽  
N. Setter ◽  
H.G. Limberger ◽  
...  

AbstractAxially symmetric coatings of ZnO and PZT have been deposited onto fiber substrates by reactive dc magnetron sputtering. Multi-layer Cr/Au/ZnO/Cr/Au coating structures on optical fibers have been used to make integrated phase modulator devices. An analysis of the structural properties and piezoelectric response of the phase modulator devices will be presented. Microtubes of ZnO and Pt/ZnO/Pt multi-layers have been prepared by coating polyester fibers that act as a fugitive phase. After burning away the polyester fiber, up to 3 cm long micro-tubes with a 23 μm inside diameter and 3 to 9 μm wall thickness were obtained.


2009 ◽  
Vol 1156 ◽  
Author(s):  
Fridrik Magnus ◽  
Arni Sigurdur Ingason ◽  
Sveinn Olafsson ◽  
Jon Tomas Gudmundsson

AbstractUltrathin TiN films were grown by reactive dc magnetron sputtering on amorphous SiO2 substrates and single-crystalline MgO substrates at 600°C. The resistance of the films was monitored in-situ during growth to determine the coalescence and continuity thicknesses. TiN films grown on SiO2 are polycrystalline and have coalescence and continuity thicknesses of 8 Å and 19 Å, respectively. TiN films grow epitaxially on the MgO substrates and the coalescence thickness is 2 Å and the thickness where the film becomes continuous cannot be resolved from the coalescence thickness. X-ray reflection measurements indicate a significantly higher density and lower roughness of the epitaxial TiN films.


Coatings ◽  
2019 ◽  
Vol 9 (4) ◽  
pp. 253 ◽  
Author(s):  
Wei-Chun Chen ◽  
Chao-Te Lee ◽  
James Su ◽  
Hung-Pin Chen

Zirconium diboride (ZrB2) thin films were deposited on a Si(100) substrate using pulsed direct current (dc) magnetron sputtering and then annealed in high vacuum. In addition, we discussed the effects of the vacuum annealing temperature in the range of 750 to 870 °C with flowing N2 on the physical properties of ZrB2 films. The structural properties of ZrB2 films were investigated with X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS). The XRD patterns indicated that the ZrB2 films annealed at various temperatures exhibited a highly preferred orientation along the [0001] direction and that the residual stress could be relaxed by increasing the annealing temperature at 870 °C in a vacuum. The surface morphology was smooth, and the surface roughness slightly decreased with increasing annealing temperature. Cross-sectional TEM images of the ZrB2/Si(100) film annealed at 870 °C reveals the films were highly oriented in the direction of the c-axis of the Si substrate and the film structure was nearly stoichiometric in composition. The XPS results show the film surfaces slightly contain oxygen, which corresponds to the binding energy of Zr–O. Therefore, the obtained ZrB2 film seems to be quite suitable as a buffer layer for III-nitride growth.


Author(s):  
Hirotaka Tanabe ◽  
Yoshio Miyoshi ◽  
Tohru Takamatsu ◽  
Hitoshi Awano ◽  
Takaaki Yamano

The mechanical properties of TiN films deposited on carbon steel JIS S45C by reactive dc magnetron sputtering under three sputtering gas pressures, 0.5Pa, 0.8Pa, and 1.76Pa were investigated. The residual stress once increased and then decreased with increasing bias voltage at 0.5Pa and 0.8Pa, but increased monotonously at 1.76Pa. These variations could be explained by the variations of the bombarding energy of a sputtered ion at each gas pressure. The variations of hardness and toughness correlated with the variation of residual stress. The variation of adhesive strength also could be explained by the variation of the bombarding energy with a model proposed in this study. A specific wear rate was also investigated, and it was found that to increase not only the hardness but also the adhesive strength is necessary to improve the wear resistance of TiN films.


2000 ◽  
Vol 88 (3) ◽  
pp. 1380-1388 ◽  
Author(s):  
Y. G. Shen ◽  
Y. W. Mai ◽  
D. R. McKenzie ◽  
Q. C. Zhang ◽  
W. D. McFall ◽  
...  

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