Remote hydrogen microwave plasma chemical vapor deposition from methylsilane precursors. 1. Growth mechanism and chemical structure of deposited a-SiC:H films
2006 ◽
Vol 15
(9)
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pp. 1484-1491
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1989 ◽
Vol 50
(C5)
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pp. C5-667-C5-672
1992 ◽
Vol 212
(1-2)
◽
pp. 140-149
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2004 ◽
Vol 13
(4-8)
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pp. 1198-1202
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