Improvement in the electronic quality of pulsed laser deposited CuIn0.7Ga0.3Se2 thin films via post-deposition elemental sulfur annealing process

Raman spectroscopy was employed to study Y–Ba–Cu–O films prepared by multilayer, reactive sputtering from separate Y, Cu, and Ba0.5Cu0.5 targets. A set of films having the composition YxBa2CuyOz with 0.7 < x < 1.8 and 2.8 < y < 3.5 and critical temperature with zero resistance, Tc(R = 0), ranging from 25 to 90 K was studied with the Raman technique. The correlation between Raman data and critical temperature, Tc, was investigated. This technique provides important information concerning the film crystallinity, homogencity, and impurity content (including other phases) which is useful in judging the quality of high Tc superconducting films. We also found that the rapid thermal annealing process is a very efficient way to reduce chemical reactions between the film and the substrate.

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Growth and Characterization of PZT Thin Films

2008 Second International Conference on Integration and Commercialization of Micro and Nanosystems ◽

10.1115/micronano2008-70289 ◽

2008 ◽

Author(s):

Daqun Bao ◽

Yi Zhang ◽

Hang Guo

Keyword(s):

Thin Films ◽

Sol Gel ◽

Xrd Analysis ◽

Annealing Process ◽

Pzt Thin Films ◽

X Ray ◽

Crystallographic Structures ◽

Strain Equation

This paper presents the growth and characterization of PZT thin films by using the sol-gel technology. In this paper, we study the influences of annealing process and different substrates on the orientation and crystalline quality of PZT thin films. The crystallographic structures are tested by using X-ray diffractometer (XRD), and the residual stresses of PZT thin films are obtained by calculation from a derived stress-strain equation in XRD analysis. Moreover, surface morphology and microstructure of the films are investigated by using AFM and SEM, and the polarization hysteresis of PZT thin films is measured by using a Sawyer Tower circuit. The results show that PZT thin films prepared by using the sol-gel method have good properties and can be used for developing PZT-based micro and nano devices.

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Effects of Deposition Temperature and Annealing Process on PZT Thin Films Prepared by Pulsed Laser Deposition

Transactions on Electrical and Electronic Materials ◽

10.4313/teem.2002.3.1.014 ◽

2002 ◽

Vol 3 (1) ◽

pp. 14-17

Author(s):

Min-Chul Kim ◽

Ji-Won Choi ◽

Chong-Yun Kang ◽

Seok-Jin Yoon ◽

Hyun-Jai Kim ◽

...

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Deposition Temperature ◽

Pulsed Laser ◽

Annealing Process ◽

Laser Deposition ◽

Pzt Thin Films

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Lead potassium niobate thin films grown by Pulsed Laser Deposition

OAJ Materials and Devices ◽

10.23647/ca.md20171401 ◽

2016 ◽

Vol vol1 (1) ◽

Author(s):

Billal Allouche ◽

Yaovi Gagou ◽

M. El Marssi

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Laser Deposition ◽

Potassium Niobate ◽

X Ray Diffraction ◽

X Ray ◽

Deposition Parameters ◽

Out Of Plane

By pulsed laser deposition, lead potassium niobate Pb2KNb5O15 was grown on (001) oriented Gd3Ga5O12 substrate using a platinum buffer layer. The PKN thin films were characterized by X-Ray diffraction and Scanning Electron Microscopy (SEM). The dependence of their structural properties as a function of the deposition parameters was studied. It has been found that the out of plane orientation of PKN film depends on the oxygen pressure used during the growth. Indeed, PKN thin film is oriented [001] for low pressure and is oriented [530] for high pressure. For these two orientations, the crystalline quality of PKN film was determined using omega scans.

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Pulsed Laser Annealing Effect on Optical and Structural Properties of ZnS/ZnSe Heterostructures

Journal of Modern Materials ◽

10.21467/jmm.6.1.23-29 ◽

2019 ◽

Vol 6 (1) ◽

pp. 23-29

Author(s):

Haidar Howari

Keyword(s):

Thin Films ◽

Absorption Coefficient ◽

Laser Annealing ◽

Pulsed Laser ◽

Annealing Process ◽

Reflection Spectra ◽

Pulsed Laser Annealing ◽

Before And After ◽

Transmission And Reflection Spectra ◽

Transmission And Reflection

Studies of pulsed laser annealing (PLA) on semiconductor thin films were performed to examine changes of the optical and structural parameters due to the laser heat. Thin films of ZnS/ZnSe were deposited on quartz substrates at a pressure of 8.2*10-6 mbar using PVD technique. These thin films were annealed at different laser powers using CO2 pulsed laser. Transmission and reflection spectra were recorded before and after the annealing process. A decrease in the transmission and reflection spectra after annealing is observed. The absorption coefficient, refractive index, damping coefficient and dielectric constant were calculated before and after the annealing process. Changes in the optical parameters are found after the annealing process. The energy band gaps of ZnS and ZnSe have been determined. Upon annealing, an increase in the absorption coefficient is observed which is due to an improvement in the granular nanostructure of the ZnS/ZnSe thin films. XRD patterns of the prepared samples were obtained before and after the annealing procedure and revealed an enhancement in the crystallite structure upon annealing.

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Latest Development on Pulsed Laser Deposited Thin Films for Advanced Luminescence Applications

Coatings ◽

10.3390/coatings10111078 ◽

2020 ◽

Vol 10 (11) ◽

pp. 1078

Author(s):

Simon N. Ogugua ◽

Odireleng Martin Ntwaeaborwa ◽

Hendrik C. Swart

Keyword(s):

Thin Films ◽

Academic Research ◽

Pulsed Laser ◽

Industrial Applications ◽

Primary Objective ◽

Basic Operation ◽

Deposition Parameters ◽

Deposition Techniques ◽

Made In

Currently, pulsed laser deposition (PLD) is a widely used technique to grow thin films for academic research and for industrial applications. The PLD has superior advantages including versatility, control over the growth rate, stoichiometric transfer and unlimited degree of freedom in the ablation geometry compared to other deposition techniques. The primary objective of this review is to revisit the basic operation mechanisms of the PLD and discuss recent modifications of the technique aimed at enhancing the quality of thin films. We also discussed recent progress made in the deposition parameters varied during preparation of luminescent inorganic oxide thin films grown using the PLD technique, which include, among others, the substrate temperature. The advanced technological applications and different methods for film characterization are also discussed. In particular, we pay attention to luminescence properties, thickness of the films and how different deposition parameters affect these properties. The advantages and shortcomings of the technique are outlined.

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