Simulation of the backscattered electron intensity of multi layer structure for the explanation of secondary electron contrast

2013 ◽  
Vol 124 ◽  
pp. 88-95 ◽  
Author(s):  
A. Sulyok ◽  
A.L. Toth ◽  
L. Zommer ◽  
M. Menyhard ◽  
A. Jablonski
Keyword(s):  
Secondary Electron ◽  
Layer Structure ◽  
Electron Intensity ◽  
Backscattered Electron

Backscattered Electron Imaging of GaAs/AlGaAs Super Lattice Structures with an Ultra-High- Resolution SEM

1988 ◽  
Vol 46 ◽  
pp. 204-205
Author(s):  
Kazumichi Ogura ◽  
Michael M. Kersker
Keyword(s):  
High Resolution ◽  
Layer Structure ◽  
High Sensitivity ◽  
Beam Current ◽  
Electron Beam Current ◽  
Lattice Structures ◽  
Super Lattice ◽  
Different Types ◽  
Backscattered Electron ◽  
Electron Imaging

Backscattered electron (BE) images of GaAs/AlGaAs super lattice structures were observed with an ultra high resolution (UHR) SEM JSM-890 with an ultra high sensitivity BE detector. Three different types of super lattice structures of GaAs/AlGaAs were examined. Each GaAs/AlGaAs wafer was cleaved by a razor after it was heated for approximately 1 minute and its crosssectional plane was observed.First, a multi-layer structure of GaAs (100nm)/AlGaAs (lOOnm) where A1 content was successively changed from 0.4 to 0.03 was observed. Figures 1 (a) and (b) are BE images taken at an accelerating voltage of 15kV with an electron beam current of 20pA. Figure 1 (c) is a sketch of this multi-layer structure corresponding to the BE images. The various layers are clearly observed. The differences in A1 content between A1 0.35 Ga 0.65 As, A1 0.4 Ga 0.6 As, and A1 0.31 Ga 0.69 As were clearly observed in the contrast of the BE image.

Thickness and composition determinations from T.E.M. specimens using both x-ray and backscattered electron data

1984 ◽  
Vol 42 ◽  
pp. 576-577
Author(s):  
M.D. Ball ◽  
H. Lagace ◽  
M.C. Thornton
Keyword(s):  
Electron Microscope ◽  
Atomic Number ◽  
Transmission Electron Microscope ◽  
Convenient Method ◽  
Flow Chart ◽  
X Ray ◽  
Intensity Measurements ◽  
Transmission Electron ◽  
Electron Intensity ◽  
Backscattered Electron

The backscattered electron coefficient η for transmission electron microscope specimens depends on both the atomic number Z and the thickness t. Hence for specimens of known atomic number, the thickness can be determined from backscattered electron coefficient measurements. This work describes a simple and convenient method of estimating the thickness and the corrected composition of areas of uncertain atomic number by combining x-ray microanalysis and backscattered electron intensity measurements.The method is best described in terms of the flow chart shown In Figure 1. Having selected a feature of interest, x-ray microanalysis data is recorded and used to estimate the composition. At this stage thickness corrections for absorption and fluorescence are not performed.

Research and Application of S-4800 Scanning Electron Microscope in Modern Testing and Analysis Technology

2014 ◽  
Vol 668-669 ◽  
pp. 936-939
Author(s):  
Quan Wen ◽  
Zhao Yang Ding ◽  
Fu Sheng Kou ◽  
Peng Zhou
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Secondary Electron ◽  
Forming Mechanism ◽  
Main Application ◽  
Signal Transformation ◽  
Backscattered Electron ◽  
Application Fields ◽  
Scanning Electron

Mechanism and functions of S-4800 Scanning Electron Microscope are introduced in this paper. The image-forming mechanism and structure of SEM are studied, and the signal transformation of secondary electron and backscattered electron is presented. The main application fields of SEM are researched.

SEM Backscattered-Electron Images of Paint Cross Sections as Information Source for the Presence of the Lead White Pigment and Lead-Related Degradation and Migration Phenomena in Oil Paintings

2011 ◽  
Vol 17 (5) ◽  
pp. 696-701 ◽  
Author(s):  
Katrien Keune ◽  
Annelies van Loon ◽  
Jaap J. Boon
Keyword(s):  
Cross Sections ◽  
Layer Structure ◽  
Information Source ◽  
Particle Morphology ◽  
Paint System ◽  
Lead White ◽  
White Pigment ◽  
Oil Paintings ◽  
Backscattered Electron ◽  
And Migration

AbstractScanning electron microscopy backscattered-electron images of paint cross sections show the compositional contrast within the paint system. They not only give valuable information about the pigment composition and layer structure but also about the aging processes in the paint. This article focuses on the reading of backscatter images of lead white-containing samples from traditional oil paintings (17th–19th centuries). In contrast to modern lead white, traditional stack process lead white is characterized by a wide particle size distribution. Changes in particle morphology and distribution are indications of chemical/physical reactivity in the paint. Lead white can be affected by free fatty acids to form lead soaps. The dissolution of lead white can be recognized in the backscatter image by gray (less scattering) peripheries around particles and gray amorphous areas as opposed to the well-defined, highly scattering intact lead white particles. The small particles react away first, while the larger particles/lumps can still be visible. Formed lead soaps appear to migrate or diffuse through the semipermeable paint system. Lead-rich bands around particles, at layer interfaces and in the paint medium, are indications of transport. The presence of lead-containing crystals at the paint surface or inside aggregates furthermore point to the migration and mineralization of lead soaps.

In situ measurement method of GaAs surface coverage using secondary electron intensity

1991 ◽  
Vol 115 (1-4) ◽  
pp. 348-352 ◽  
Author(s):  
Kiyoshi Kanisawa ◽  
Jiro Osaka ◽  
Shigeru Hirono ◽  
Naohisa Inoue
Keyword(s):  
Measurement Method ◽  
Secondary Electron ◽  
Surface Coverage ◽  
In Situ Measurement ◽  
Gaas Surface ◽  
Electron Intensity

μm-Scale Lateral Growth of Ga-Monolayers Observed In-Situ by Electron Microscopy

1989 ◽  
Vol 159 ◽  
Author(s):  
J. Osaka ◽  
N. Inoue
Keyword(s):  
Electron Microscopy ◽  
Secondary Electron ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Intensity Difference ◽  
Lateral Growth ◽  
Mbe Growth ◽  
Electron Intensity ◽  
Scanning Electron

ABSTRACTAn ultra high vacuum scanning electron microscope equipped to an MBE system is utilized to study a transient of a surface atomic structure during MBE growth of GaAs and AlGaAs by the alternate supply method. Lateral growth of a Ga-monolayer over microns is realized utilizing Ga droplets. This is confirmed by discriminating the Ga and As top layer by using the secondary electron intensity difference between the Ga and As top layer. The growth mechanism of the Ga monolayer is discussed based on the results.

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