Defect analysis by statistical fitting to 3D atomicmaps

1990 ◽

Vol 48 (2) ◽

pp. 258-259

Author(s):

Martin J. Mahon ◽

Patrick W. Keating ◽

John T. McLaughlin

Keyword(s):

Electron Microscopy ◽

Zero Tolerance ◽

Polymeric Materials ◽

Plant Management ◽

Defect Analysis ◽

X Ray ◽

Root Cause ◽

Cutting Out ◽

Foreign Materials ◽

Automotive Finish

Coatings are applied to appliances, instruments and automobiles for a variety of reasons including corrosion protection and enhancement of market value. Automobile finishes are a highly complex blend of polymeric materials which have a definite impact on the eventual ability of a car to sell. Consumers report that the gloss of the finish is one of the major items they look for in an automobile.With the finish being such an important part of the automobile, there is a zero tolerance for paint defects by auto assembly plant management. Owing to the increased complexity of the paint matrix and its inability to be “forgiving” when foreign materials are introduced into a newly applied finish, the analysis of paint defects has taken on unparalleled importance. Scanning electron microscopy with its attendant x-ray analysis capability is the premier method of examining defects and attempting to identify their root cause.Defects are normally examined by cutting out a coupon sized portion of the autobody and viewing in an SEM at various angles.

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Toward quantitative defect analysis using HREM

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100171304 ◽

1994 ◽

Vol 52 ◽

pp. 714-715

Author(s):

David J. Smith

Keyword(s):

Electron Microscope ◽

Unit Cell ◽

Defect Analysis ◽

Significant Progress ◽

Detailed Characterization ◽

Small Unit ◽

Resolution Electron ◽

High Resolution Electron Microscope ◽

Large Unit Cell ◽

Made In

The electron microscope has evolved to the level where it is now straightforward to record highresolution images from thin samples (t∼10 to 20nm) that are directly interpretable in terms of atomic arrangements. Whilst recorded images necessarily represent two-dimensional projections of the structure, many defects such as dislocations and interfaces may be linear or planar in nature and thus might be expected to be amenable to detailed characterization. In this review, we briefly consider the recent significant progress that has been made in quantitative defect analysis using the high-resolution electron microscope and then discuss some drawbacks to the technique as well as potential scope for further improvements. Surveys of defect modelling for some small-unit-cell materials and interfaces have recently been published, and reference should be made to other papers in this symposium for further examples.The technique of structure imaging originated in the early '70s with observations of large-unit-cell block oxides.

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Failure Analysis and Defect Inspection of Electronic Devices by High-Resolution Cathodoluminescence

ISTFA 2017: Conference Proceedings from the 43rd International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2017p0349 ◽

2017 ◽

Author(s):

C. Monachon ◽

M.S. Zielinski ◽

D. Gachet ◽

S. Sonderegger ◽

S. Muckenhirn ◽

...

Keyword(s):

Failure Analysis ◽

Electronic Materials ◽

Electronic Devices ◽

Optical Emission ◽

Large Field ◽

Nanometer Scale ◽

Defect Analysis ◽

Defect Inspection ◽

Spectrally Resolved ◽

Non Destructive

Abstract Quantitative cathodoluminescence (CL) microscopy is a new optical spectroscopy technique that measures electron beam-induced optical emission over large field of view with a spatial resolution close to that of a scanning electron microscope (SEM). Correlation of surface morphology (SE contrast) with spectrally resolved and highly material composition sensitive CL emission opens a new pathway in non-destructive failure and defect analysis at the nanometer scale. Here we present application of a modern CL microscope in defect and homogeneity metrology, as well as failure analysis in semiconducting electronic materials

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The Application of FIB Voltage-Contrast Technique Combining with TEM on Subtle Defect Analysis: Via Delamination After TC

ISTFA 1997: Conference Proceedings from the 23rd International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa1997p0115 ◽

1997 ◽

Author(s):

X. Yang ◽

X. Song

Keyword(s):

Cross Section ◽

Focused Ion Beam ◽

Ion Beam ◽

New Product ◽

Defect Analysis ◽

Transmission Electron ◽

Contrast Technique ◽

Defect Mechanism ◽

Open Defect ◽

Voltage Contrast

Abstract Novel Focused Ion Beam (FIB) voltage-contrast technique combined with TEM has been used in this study to identify a certain subtle defect mechanism that caused reliability stress failures of a new product. The suspected defect was first isolated to a unique via along the row through electrical testing and layout analysis. Static voltage contrast of FIB cross-section was used to confirm the suspected open defect at the via. Precision Transmission Electron Microscope (TEM) was then used to reveal the detail of the defect. Based on the result, proper process changes were implemented. The failure mode was successfully eliminated and the reliability of the product was greatly improved.

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