Diffusion barrier performance of amorphous W–Ti–N films in Cu metallization

CoSiN film can be used as diffusion barrier layer in ULSI-Cumetallization.CoSiN/Cu/CoSiN/SiO2/Si films are prepared by magnetron sputtering technology. Four-point-probe, SGC-10,Atomic forced microscopy (AFM) are used to detect the resistivity,film thickness and surface morphology. It is investigated the barrier performance of CoSiN film for Cu metallization in sub-45nm technology. The results shows that the resistivity and the components ofCoSiN/Cu/CoSiN/SiO2/Si film do not have the obvious change after being annealing at 550°C in Ar atomosphere, and CoSiN film can keep good barrier performance for Cu line. This multi-film shows good thermal stability .

Download Full-text

Improvement of Ta diffusion barrier performance in Cu metallization by insertion of a thin Zr layer into Ta film

Applied Physics Letters ◽

10.1063/1.121472 ◽

1998 ◽

Vol 72 (22) ◽

pp. 2832-2834 ◽

Cited By ~ 8

Author(s):

Joon Seop Kwak ◽

Hong Koo Baik ◽

Jong-Hoon Kim ◽

Sung-Man Lee

Keyword(s):

Diffusion Barrier ◽

Cu Metallization ◽

Barrier Performance

Download Full-text

Improvement of Diffusion Barrier Performance of Ru Thin Film by Incorporating a WHfN Underlayer for Cu Metallization

Electrochemical and Solid-State Letters ◽

10.1149/1.3518522 ◽

2011 ◽

Vol 14 (2) ◽

pp. H84 ◽

Cited By ~ 6

Author(s):

Chun-Xiao Yang ◽

Shi-Jin Ding ◽

David Wei Zhang ◽

Peng-Fei Wang ◽

Xin-Ping Qu ◽

...

Keyword(s):

Thin Film ◽

Diffusion Barrier ◽

Cu Metallization ◽

Barrier Performance

Download Full-text

Improvement of Zr-N Diffusion Barrier Performance in Cu Metallization by Insertion of a Thin Zr Layer

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.347-350.1148 ◽

2013 ◽

Vol 347-350 ◽

pp. 1148-1152

Author(s):

Yan Nan Zhai ◽

Hun Zhang ◽

Kun Yang ◽

Zhao Xin Wang ◽

Li Li Zhang

Keyword(s):

Diffusion Barrier ◽

Barrier Properties ◽

Fast Diffusion ◽

X Ray Diffraction ◽

Multilayered Films ◽

X Ray ◽

Cu Metallization ◽

Cu Film ◽

Barrier Performance ◽

Failure Temperature

In order to increase the failure temperature of Zr-N diffusion barrier for Cu, the effect of insertion of a thin Zr layer into Zr-N film on Zr-N diffusion barrier performance in Cu metallization was investigated by means of X-ray diffraction, scanning electron microscopy, Auger electron spectroscopy, and 4-point probe technique. XRD,SEM ,AES and FPP results show that the insertion of a thin Zr layer into Zr-N film improves barrier properties significantly when the ZrN / Zr/ZrN barrier layers are deposited by RF reactive magnetron sputtering and Zr-N(10nm)/Zr (5nm)/Zr-N(10nm) barrier tolerates annealing at 700°C for 1 h without any breaking and agglomerating Cu film. This interpretes that insertion of a thin Zr layer into Zr-N film is attributed to the densification of grain boundaries in ZrN/Zr/ZrN films followed by the reduction of fast diffusion of Cu through ZrN /Zr/ ZrN multilayered films.

Download Full-text

Improvement of thermal stability of Ta-N film in Cu metallization by a Zr-Si interlayer

E3S Web of Conferences ◽

10.1051/e3sconf/202127104015 ◽

2021 ◽

Vol 271 ◽

pp. 04015

Author(s):

Yannan Zhai ◽

Zhaoxin Wang ◽

Hui Zhang ◽

Ling Gao ◽

Changhong Ding

Keyword(s):

Diffusion Barrier ◽

Rf Magnetron Sputtering ◽

X Ray Diffraction ◽

Pure Nitrogen ◽

Cu Metallization ◽

In Situ Deposition ◽

Barrier Performance ◽

Barrier Breakdown ◽

20 Nm ◽

Substrate Temperatures

Ta-N (10 nm)/Zr (20 nm) film was grown on n-type (100) silicon wafer at various substrate temperatures in a rf magnetron sputtering system, followed by in situ deposition of Cu. The Cu/Ta-N/Zr/Si samples were subjected to thermal annealing up to 800 ℃ under the protection of pure nitrogen gas. In order to investigate the effect of insertion of a thin Zr layer under Ta-N film on Ta-N diffusion barrier performance in Cu metallization, Cu/Ta-N/Zr/Si contact system was characterized by X-ray diffraction (XRD), four-point probe (FPP) measurement, scanning electron microscopy (SEM), and Auger electron spectroscopy (AES) depth profile. The results reveal that the microstructure of Ta-N films deposited on Zr is amorphous at different substrate temperatures. The barrier breakdown temperature of Ta-N/Zr film is about 100°C higher than that of Ta-N. It can effectively prevent the diffusion of Cu after annealed at 800°C. The improvement of diffusion barrier performance may be due to the production of Zr-Si layer with low contact resistivity after annealed at 800°C.

Download Full-text

Mechanical Properties and Diffusion Barrier Performance of CrWN Coatings Fabricated through Hybrid HiPIMS/RFMS

Coatings ◽

10.3390/coatings11060690 ◽

2021 ◽

Vol 11 (6) ◽

pp. 690

Author(s):

Li-Chun Chang ◽

Cheng-En Wu ◽

Tzu-Yu Ou

Keyword(s):

Mechanical Properties ◽

Magnetron Sputtering ◽

Diffusion Barrier ◽

Scratch Resistance ◽

Face Centered Cubic ◽

Cu Metallization ◽

Barrier Performance ◽

Face Centered ◽

And Diffusion ◽

Hardness Values

CrWN coatings were fabricated through a hybrid high-power impulse magnetron sputtering/radio-frequency magnetron sputtering technique. The phase structures, mechanical properties, and tribological characteristics of CrWN coatings prepared with various nitrogen flow ratios (fN2s) were investigated. The results indicated that the CrWN coatings prepared at fN2 levels of 0.1 and 0.2 exhibited a Cr2N phase, whereas the coatings prepared at fN2 levels of 0.3 and 0.4 exhibited a CrN phase. These CrWN coatings exhibited hardness values of 16.7–20.2 GPa and Young’s modulus levels of 268–296 GPa, which indicated higher mechanical properties than those of coatings with similar residual stresses prepared through conventional direct current magnetron sputtering. Face-centered cubic (fcc) Cr51W2N47 coatings with a residual stress of −0.53 GPa exhibited the highest wear and scratch resistance. Furthermore, the diffusion barrier performance of fcc CrWN films on Cu metallization was explored, and they exhibited excellent barrier characteristics up to 650 °C.

Download Full-text

Diffusion barrier performance of W/Ta–W–N double layers for Cu metallization

Microelectronic Engineering ◽

10.1016/j.mee.2005.11.005 ◽

2006 ◽

Vol 83 (3) ◽

pp. 423-427 ◽

Cited By ~ 9

Author(s):

Shuangxi Song ◽

Yuzhang Liu ◽

Ming Li ◽

Dali Mao ◽

Chengkang Chang ◽

...

Keyword(s):

Diffusion Barrier ◽

Double Layers ◽

Cu Metallization ◽

Barrier Performance

Download Full-text

Diffusion barrier performance of TiVCr alloy film in Cu metallization

Applied Surface Science ◽

10.1016/j.apsusc.2010.12.149 ◽

2011 ◽

Vol 257 (11) ◽

pp. 4923-4927 ◽

Cited By ~ 8

Author(s):

Du-Cheng Tsai ◽

Yen-Lin Huang ◽

Sheng-Ru Lin ◽

De-Ru Jung ◽

Shou-Yi Chang ◽

...

Keyword(s):

Diffusion Barrier ◽

Alloy Film ◽

Cu Metallization ◽

Barrier Performance

Download Full-text

Nano-grained ZrB2 thin films as a high-performance diffusion barrier in Cu metallization

RSC Advances ◽

10.1039/c5ra20864e ◽

2016 ◽

Vol 6 (2) ◽

pp. 844-850 ◽

Cited By ~ 2

Author(s):

Y. Meng ◽

F. Ma ◽

Z. X. Song ◽

Y. H. Li ◽

K. W. Xu

Keyword(s):

Thin Films ◽

Thermal Stability ◽

Magnetron Sputtering ◽

Radio Frequency ◽

Diffusion Barrier ◽

High Performance ◽

Elevated Temperatures ◽

Rf Magnetron Sputtering ◽

Cu Metallization ◽

Barrier Performance

Nano-grained ZrB2 thin films are prepared by radio-frequency (rf) magnetron sputtering and, the thermal stability and the diffusion barrier performance are evaluated at elevated temperatures.

Download Full-text