Epitaxial growth of GaN with a high growth rate of 1.4μm/h by RF-radical source molecular beam epitaxy
1998 ◽
Vol 189-190
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pp. 385-389
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1998 ◽
Vol 191
(1-2)
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pp. 31-33
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Keyword(s):
2000 ◽
Vol 8
(3)
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pp. 333-338
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Keyword(s):
Keyword(s):
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2008 ◽
Vol 600-603
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pp. 111-114
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Keyword(s):
2016 ◽
Vol 858
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pp. 173-176
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2007 ◽
Vol 556-557
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pp. 157-160
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