Structural development during the early stages of polymer melt spinning by in-situ synchrotron X-ray techniques

Polymer ◽  
2000 ◽  
Vol 41 (25) ◽  
pp. 8887-8895 ◽  
Author(s):  
J.M Schultz ◽  
B.S Hsiao ◽  
J.M Samon
2008 ◽  
Vol 3 (3) ◽  
pp. 155892500800300 ◽  
Author(s):  
Michael S. Ellison ◽  
Paulo E. Lopes ◽  
William T. Pennington

The properties of a polymer are strongly influenced by its morphology. In the case of fibers from semi-crystalline polymers this consists of the degree of crystallinity, the spacing and alignment of the crystalline regions, and molecular orientation of the polymer chains in the amorphous regions. Information on crystallinity and orientation can be obtained from X-ray analysis. In-situ X-ray characterization of a polymer during the melt spinning process is a major source of information about the effects of material characteristics and processing conditions upon structure evolution along the spinline, and the final structure and properties of the end product. We have recently designed and installed an X-ray system capable of in-situ analysis during polymer melt spinning. To the best of our knowledge this system is unique in its capabilities for the simultaneous detection of wide angle and small angle X-ray scattering (WAXS and SAXS, respectively), its use of a conventional laboratory radiation source, its vertical mobility along the spinline, and its ability to simulate a semi-industrial environment. Setup, operation and demonstration of the capabilities of this system is presented herein as applied to the characterization of the melt spinning of isotactic poly(propylene). Crystallinity and crystalline orientation calculated from WAXS patterns, and lamellar long period calculated from SAXS patterns, were obtained during melt spinning of the polymer along the spinline.


1998 ◽  
Author(s):  
Brian K. Tanner ◽  
Andrew M. Keir ◽  
Peter Moeck ◽  
Colin R. Whitehouse ◽  
Gareth Lacey ◽  
...  
Keyword(s):  
X Ray ◽  

2002 ◽  
Vol 743 ◽  
Author(s):  
Eugen M. Trifan ◽  
David C. Ingram

ABSTRACTAn innovative approach for in-situ characterization has been used in this work to investigate the composition, growth mode, morphology and crystalline ordering of the early stages of growth of GaN films grown on sapphire by MOCVD for substrate temperatures in the range of 450°C to 1050°C. We have performed in-situ characterization by Rutherford Backscattering Spectroscopy (RBS), Ion Channeling, X-ray Photoelectron Spectroscopy (XPS), and Low Energy Electron Diffraction. Ex-situ the films have been characterized by Scanning Electron Microscopy (SEM), X-ray Diffraction (XRD) and thickness profilometry. The films have been grown in an in-house designed and build MOCVD reactor that is attached by UHV lines to the analysis facilities. RBS analysis indicated that the films have the correct stoichiometry, have variable thickness and for low substrate temperature completely cover the substrate while for temperatures 850°C and higher islands are formed that may cover as few as 5 percent of the substrate. From Ion Channeling and LEED we have determined the crystallographic phase to be wurtzite. The crystalline quality increases with higher deposition temperature and with thickness. The films are epitaxialy grown with the <0001> crystallographic axis and planes of the GaN films aligned with the sapphire within 0.2 degrees.


Carbon ◽  
2010 ◽  
Vol 48 (4) ◽  
pp. 964-971 ◽  
Author(s):  
Harald Rennhofer ◽  
Dieter Loidl ◽  
Stephan Puchegger ◽  
Herwig Peterlik

2017 ◽  
Vol 37 (1) ◽  
Author(s):  
Huayna Terraschke ◽  
Merrit Rothe ◽  
Patric Lindenberg

AbstractKnowledge about the mechanisms involved in the structural development of solid materials at the atomic level is essential for designing rational synthesis protocols for these compounds, which may be used to improve desired technical properties, such as light emission, conductivity, magnetism, porosity or particle size, and may allow the tailored design of solid materials to generate the aforementioned properties. Recent technological advancements have allowed the combination of synchrotron-based


Nanoscale ◽  
2010 ◽  
Vol 2 (11) ◽  
pp. 2447 ◽  
Author(s):  
Gaetano Campi ◽  
Alessandra Mari ◽  
Heinz Amenitsch ◽  
Augusto Pifferi ◽  
Carla Cannas ◽  
...  

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