Organic light-emitting diode on indium zinc oxide film prepared by ion assisted deposition dc sputtering system

2002 ◽  
Vol 46 (4) ◽  
pp. 477-480 ◽  
Author(s):  
W.J Lee ◽  
Y.-K Fang ◽  
J.-J Ho ◽  
C.-Y Chen ◽  
L.-H Chiou ◽  
...  
2007 ◽  
Vol 124-126 ◽  
pp. 399-402 ◽  
Author(s):  
Han Ki Kim ◽  
Jung Hyeok Bae ◽  
Jong Min Moon ◽  
Sang Woo Kim ◽  
Soon Wook Jeong ◽  
...  

Electrical, optical, and structural properties of amorphous indium zinc oxide (IZO) anode films grown on flexible polycarbonate (PC) substrate were investigated. The x-ray diffraction (XRD) result shows that the IZO film grown at room temperature is complete amorphous structure due to low substrate temperature. A sheet resistance of 34.1 ,/, average transmittance above 88.9% in visible range, and root mean spare roughness of 3.5~10.5 Å were obtained even in the amorphous IZO anode film grown on PC substrate at room temperature. It is shown that the Ir(ppy)3 doped-flexible organic light emitting diode (OLED) fabricated on the amorphous IZO anode exhibit comparable current-voltage-luminance characteristics as well as external quantum efficiency and power efficiency to OLED fabricated on conventional ITO/glass substrate. These findings indicate that the IZO anode film is a promising anode material for the fabrication of flexible OLEDs.


2013 ◽  
Vol 102 (5) ◽  
pp. 053305 ◽  
Author(s):  
S. W. Liu ◽  
J. X. Wang ◽  
Y. Divayana ◽  
K. Dev ◽  
S. T. Tan ◽  
...  

2009 ◽  
Vol 498 (1) ◽  
pp. 284-289
Author(s):  
Chul Ho Ok ◽  
Jin Woo Han ◽  
Byeong Yong Kim ◽  
Sang Kuk Lee ◽  
Jeong Min Han ◽  
...  

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