The use of transparent conducting indium-zinc oxide film as a current spreading layer for vertical-structured high-power GaN-based light-emitting diodes

2006 ◽  
Vol 18 (10) ◽  
pp. 1146-1148 ◽  
Author(s):  
Shui-Jinn Wang ◽  
Shiue-Lung Chen ◽  
Kai-Ming Uang ◽  
Wei-Chi Lee ◽  
Tron-Min Chen ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Oxide Film ◽  
High Power ◽  
Light Emitting Diodes ◽  
Zinc Oxide Film ◽  
Current Spreading ◽  
Light Emitting ◽  
Indium Zinc Oxide ◽  
Transparent Conducting ◽  
A Current

High-Power GaN-Based Light-Emitting Diodes with Transparent Indium Zinc Oxide Films

2005 ◽  
Vol 44 (4B) ◽  
pp. 2516-2519 ◽  
Author(s):  
Kai-Ming Uang ◽  
Shui-Jinn Wang ◽  
Shiue-Lung Chen ◽  
Chin-Kun Wu ◽  
Shu-Cheng Chang ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
High Power ◽  
Light Emitting Diodes ◽  
Oxide Films ◽  
Light Emitting ◽  
Zinc Oxide Films ◽  
Indium Zinc Oxide

scholarly journals High-Power GaN-Based Vertical Light-Emitting Diodes on 4-Inch Silicon Substrate

Nanomaterials ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 1178 ◽  
Author(s):  
Qiang Zhao ◽  
Jiahao Miao ◽  
Shengjun Zhou ◽  
Chengqun Gui ◽  
Bin Tang ◽  
...  
Keyword(s):  
High Power ◽  
Silicon Substrate ◽  
Flip Chip ◽  
Heat Dissipation ◽  
Light Emitting Diodes ◽  
Light Output ◽  
Current Spreading ◽  
Light Emitting ◽  
Fabry Perot ◽  
Lift Off

We demonstrate high-power GaN-based vertical light-emitting diodes (LEDs) (VLEDs) on a 4-inch silicon substrate and flip-chip LEDs on a sapphire substrate. The GaN-based VLEDs were transferred onto the silicon substrate by using the Au–In eutectic bonding technique in combination with the laser lift-off (LLO) process. The silicon substrate with high thermal conductivity can provide a satisfactory path for heat dissipation of VLEDs. The nitrogen polar n-GaN surface was textured by KOH solution, which not only improved light extract efficiency (LEE) but also broke down Fabry–Pérot interference in VLEDs. As a result, a near Lambertian emission pattern was obtained in a VLED. To improve current spreading, the ring-shaped n-electrode was uniformly distributed over the entire VLED. Our combined numerical and experimental results revealed that the VLED exhibited superior heat dissipation and current spreading performance over a flip-chip LED (FCLED). As a result, under 350 mA injection current, the forward voltage of the VLED was 0.36 V lower than that of the FCLED, while the light output power (LOP) of the VLED was 3.7% higher than that of the FCLED. The LOP of the FCLED saturated at 1280 mA, but the light output saturation did not appear in the VLED.

Smooth indium zinc oxide film prepared by sputtering a In2O3:ZnO=95:5 target

2007 ◽  
Vol 38 (12) ◽  
pp. 1202-1206 ◽  
Author(s):  
Shang-Chou Chang ◽  
Ming-Hua Shiao
Keyword(s):  
Zinc Oxide ◽  
Oxide Film ◽  
Zinc Oxide Film ◽  
Indium Zinc Oxide

Zinc oxide-based current spreading layer behavior on the performance of P -side-up thin-film red light emitting diodes

2018 ◽  
Vol 432 ◽  
pp. 196-201 ◽  
Author(s):  
Ming-Chun Tseng ◽  
Dong-Sing Wuu ◽  
Chi-Lu Chen ◽  
Hsin-Ying Lee ◽  
Ray-Hua Horng
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Light Emitting Diodes ◽  
Red Light ◽  
Current Spreading ◽  
Light Emitting ◽  
Layer Behavior
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