Short gate-length InAlAs/InGaAs MODFETs with asymmetry gate-recess grooves: electrochemical fabrication and performance

1999 ◽  
Vol 43 (8) ◽  
pp. 1527-1533 ◽  
Author(s):  
D Xu ◽  
T Suemitsu ◽  
H Yokoyama ◽  
Y Umeda ◽  
Y Yamane ◽  
...  
Keyword(s):  
Gate Length ◽  
And Performance ◽  
Gate Recess ◽  
Electrochemical Fabrication

IMPACT OF INTRINSIC PARAMETER FLUCTUATIONS IN NANO-CMOS DEVICES ON CIRCUITS AND SYSTEMS

2007 ◽  
Vol 17 (03) ◽  
pp. 501-508
Author(s):  
SCOTT ROY ◽  
BINJIE CHENG ◽  
ASEN ASENOV
Keyword(s):  
Gate Length ◽  
Design Tools ◽  
Intrinsic Parameter ◽  
Stochastic Nature ◽  
Device Mismatch ◽  
Novel Technology ◽  
Starting Point ◽  
And Performance ◽  
The Impact ◽  
Intrinsic Parameter Fluctuations

Device parameter fluctuations, which arise from both the stochastic nature of the manufacturing process and more fundamentally from the intrinsic discreteness of charge and matter, are a dominant source of device mismatch in nano-CMOS devices, and a bottleneck to the future yield and performance of circuits and systems. The impact of such parameter fluctuations is investigated for circuits — with a specific exemplar of 6-T SRAM — whose devices scale from 35 nm gate length. We posit a change in design approach to include the use of statistical compact models as a starting point for the development of cell libraries containing fluctuation information necessary for design under the constraints of parameter fluctuations, and novel Technology Aided System Design tools.

Technology and performance of 150nm gate length InGaP/InGaAs/GaAs pHEMTs

Vacuum ◽  
2001 ◽  
Vol 61 (2-4) ◽  
pp. 323-327 ◽  
Author(s):  
T Lalinský ◽  
J Škriniarová ◽  
J Kuzmı́k ◽  
S Hasenöhrl ◽  
A Fox ◽  
...  
Keyword(s):  
Gate Length ◽  
And Performance

Experimental technology and performance of 0.1-µm-gate-length FETs operated at liquid-nitrogen temperature

1990 ◽  
Vol 34 (4) ◽  
pp. 452-465 ◽  
Author(s):  
G. A. Sai-Halasz ◽  
M. R. Wordeman ◽  
D. P. Kern ◽  
S. A. Rishton ◽  
E. Ganin ◽  
...  
Keyword(s):  
Liquid Nitrogen ◽  
Liquid Nitrogen Temperature ◽  
Gate Length ◽  
And Performance ◽  
Experimental Technology

scholarly journals 75 nm Gate Length PHEMT With $f_{max} = 800$ GHz Using Asymmetric Gate Recess: RF and Noise Investigation

2021 ◽  
pp. 1-7
Author(s):  
M. Samnouni ◽  
N. Wichmann ◽  
X. Wallart ◽  
C. Coinon ◽  
S. Lepilliet ◽  
...  
Keyword(s):  
Gate Length ◽  
Gate Recess

Manufacturing study of yield and performance dependence on gate length of submicron AlInAs-GaInAs HEMTs

1993 ◽  
Vol 6 (4) ◽  
pp. 380-383
Author(s):  
L. Larson ◽  
L. Jelloian ◽  
S. Rosenbaum ◽  
A. Schmitz ◽  
M. Thompson ◽  
...  
Keyword(s):  
Gate Length ◽  
And Performance

FABRICATION TECHNIQUES FOR SELF-ALIGNED GaAs-BASED HBTs AND SUBMICRON GATE LENGTH FETs

1994 ◽  
Vol 08 (16) ◽  
pp. 2221-2243
Author(s):  
F. REN
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Ohmic Contact ◽  
Field Effect Transistors ◽  
Bipolar Transistors ◽  
Device Performance ◽  
Gate Length ◽  
Active Devices ◽  
Etching Selectivity ◽  
Gate Recess ◽  
Wet Etch

Process technologies for self-aligned AlGaAs/GaAs and InGaP/GaAs heterojunction bipolar transistors (HBTs) as well as gate definition and dry etching fabrication schemes for submicron gate length AlGaAs/GaAs-based field effect transistors (FETs) are presented. Multiple energy F + and H + ions were used to isolate the active devices for HBTs. The resistance of test wafers at 200° C showed no change over periods of more than 50 days. Highly selective dry and wet etch techniques for InGaP/GaAs and AlGaAs/GaAs material systems were used to uniformly expose heterojunctions. Reliability of the alloyed ohmic contact and feasibility of the nonalloyed ohmic contact metallizations for both p and n type GaAs layers will be discussed. The reproducible gate recess etching is one of the critical steps for AlGaAs/GaAs-based FETs. The etching selectivity, damage, pre- and post-clean procedures were studied in terms of device performance. A simple low temperature SiN x deposition and an etch-back process with optical stepper were used to demonstrate 0.1 µm Y-shape gate feature.

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