The interface formation and adhesion of metals (Cu, Ta, and Ti) and low dielectric constant polymer-like organic thin films deposited by plasma-enhanced chemical vapor deposition using para-xylene precursor

2000 ◽  
Vol 377-378 ◽  
pp. 122-128 ◽  
Author(s):  
K.S. Kim ◽  
Y.C. Jang ◽  
H.J. Kim ◽  
Y.-C. Quan ◽  
J. Choi ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Thin Films ◽  
Low Dielectric Constant ◽  
Interface Formation ◽  
Low Dielectric ◽  
Para Xylene

Low Dielectric Constant, High Temperature Stable Copolymer Thin Films by Room Temperature Chemical Vapor Deposition

1994 ◽  
Vol 343 ◽  
Author(s):  
Justin F. Gaynor ◽  
Seshu B. Desu
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Speed ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Conformal Coatings

ABSTRACTPolyxylylene thin films grown by the chemical vapor deposition (CVD) process have long been utilized to achieve uniform, pinhole-free conformal coatings. They have recently been cited as possible low dielectric constant films for intermetal layers in high-speed ICs. Homopolymer films are highly crystalline and have a glass transition temperature around room temperature. We have demonstrated that room temperature copolymerization with previously untested comonomers can be achieved during the CVD process. Copolymerizing chloro-p-xylylene with perfluorooctyl methacrylate results in the dielectric constant at optical frequencies being lowered from 2.68 to 2.19. Copolymerizing p-xylylene with vinylbiphenyl resulted in films which increase the temperature at which oxidative scission occurs from 320 to 450C. Copolymerizing p-xylylene with 9-vinylanthracene resulted in a brittle, yellow film.

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