Temperature dependent effective ionization coefficient for Si

2000 ◽  
Vol 51-52 ◽  
pp. 535-540
Author(s):  
Yong-Sung Chung ◽  
Il-Yong Park ◽  
Yearn-Ik Choi ◽  
Sang-Koo Chung
2018 ◽  
Vol 51 (13) ◽  
pp. 135205 ◽  
Author(s):  
Märt Aints ◽  
Indrek Jõgi ◽  
Matti Laan ◽  
Peeter Paris ◽  
Jüri Raud

1998 ◽  
Vol 512 ◽  
Author(s):  
You-Sang Lee ◽  
D.-S. Byeon ◽  
Y.-I. Choi ◽  
I.-Y. Park ◽  
Min-Koo Han

ABSTRACTThe closed-form analytic solutions for the breakdown voltage of 6H-SiC RTD, reachthrough diode, having the structure of p+-n-n+, are successfully derived by solving the impact ionization integral using effective ionization coefficient in the reachthrough condition. In the region of the lowly doped epitaxial layer, the breakdown voltages of 6H-SiC RTD nearly constant with the increased doping concentration. Also the breakdown voltages of 6H-SiC RTD decrease, in the region of the highly doped epitaxial layer, which coincides with Baliga'seq. [1].


2019 ◽  
Vol 9 (18) ◽  
pp. 3686 ◽  
Author(s):  
Zhaoyu Qin ◽  
Yunxiang Long ◽  
Zhenyu Shen ◽  
Cheng Chen ◽  
Liping Guo ◽  
...  

The normalized Townsend first ionization coefficient α/N and normalized attachment coefficient η/N in pure C4F7N were measured by using the steady-state Townsend (SST) method for a range of reduced electric fields E/N from 750 to 1150 Td at room temperature (20 °C). Meanwhile, the effective ionization coefficients are obtained. All SST experimental results show good agreement with pulsed Townsend (PT) experiment results. Comparisons of the critical electric fields of C4F7N with SF6 and other alternative gases such as c-C4F8 and CF3I indicate that C4F7N has a better insulation performance with a much higher normalized critical electric field at 959.19 Td.


2000 ◽  
Vol 622 ◽  
Author(s):  
Y. S. Lee ◽  
M. K. Han ◽  
Y. I. Choi

ABSTRACTThe breakdown voltages of 6H- and 4H-SiC rectifiers as function of temperature were modeled analytically in both non-reachthrough diode and reachthrough diode. The breakdown voltage was derived by the ionization integral employing accurate hole impact ionization coefficient. The breakdown voltage of SiC rectifiers was increased with increasing temperature and the positive temperature coefficient of breakdown voltage indicates that SiC rectifiers are suitable for high temperature applications. The breakdown voltages of both 6H- and 4H-SiC diodes were increased by M(T)-1/4 in NRDs and M(T)-1/8 in RDs.


2015 ◽  
Vol 93 (11) ◽  
pp. 1407-1412 ◽  
Author(s):  
Nour Hijazi ◽  
M.Z. Kabir

The mechanisms of electric-field- and temperature-dependent effective drift mobility and impact ionization coefficient of both holes and electrons in amorphous selenium (a-Se) are investigated in this paper. An analytical model for the microscopic mobility, momentum relaxation mean free path, and hence the effective drift mobility and impact ionization coefficient of carriers, is proposed in this paper by considering the density of states distribution, field enhancement release rate from the shallow traps, and carrier heating. The results of the model are fitted with the published experimental results on effective mobility and impact ionization coefficient with wide variations of the applied electric field and temperature. A better fitting considering thermally activated tunneling for the field-enhancement release rate indicates that the effective drift mobility at extremely high fields is mainly controlled by the neutral defect states near the band edges. The density of state function near the band edges, consisting of an exponential tail and a Gaussian peak, can successfully describe the electric-field- and temperature-dependent effective drift mobility characteristics in a-Se. The momentum relaxation mean free path decreases with increasing field and decreasing temperature, which is required to describe the electric-field- and temperature-dependent behaviors of impact ionization coefficient in a-Se.


2021 ◽  
Vol 36 (1) ◽  
pp. 420-432
Author(s):  
Mohammad M. Othman ◽  
Sherzad A. Taha ◽  
Saeed O. Ibrahim

In this study, the electron energy distribution function EEDF, the electron swarm parameters, the effective ionization coefficients, and the critical field strength (dielectric strength) in binary He-H2 gas mixture which used as cryogenic for high-temperature superconducting power application, are evaluated by using two-term approximation of the Boltzmann equation over the range of E/N ( the electric field to gas density) from 1 to 100 Td ( 1 Td=10-17 Vcm2) at temperature 77 K and pressure 2MPa, taking into account elastic and inelastic cross-section. Using the calculated EEDF, the electron swarm parameters (electron drift velocity, mean electron energy, diffusion coefficient, electron mobility, ionization and attachment coefficient) are calculated. At low reduced electric field E/N, the EEDF close Maxwellian distribution, at high E/N, due to vibrational excitation of H2 the calculated distribution function is non-Maxwellian. Besides, in the He-H2 mixture, it is found that increasing small amount of H2 enhances to shift the tail of EEDF to the lower energy region, the reduced ionization coefficient α/N. reduced effective ionization coefficient (α-η)/N) decreases, while, reduced attachment coefficient η/N, reduced critical electric field strength (E/N)crt. and critical electric field Ecrt. Increases, because of hydrogen’s large ionization cross-sections. The dielectric strength of 5% H2 in mixture is in good agreement with experimental values, it is found that dielectric strength depend on pressure and temperature. The electron swarm parameters in pure gaseous helium (He) and hydrogen (H2), in satisfying agreement with previous available theoretical and experimental values. The validity of the calculated values has been confirmed by two-term approximation of the Boltzmann equation analysis.


1991 ◽  
Vol 30 (Part 1, No. 7) ◽  
pp. 1487-1488 ◽  
Author(s):  
Hartmut Hilmert ◽  
Werner F. Schmidt ◽  
Yosuke Sakai ◽  
Sadao Sawada

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