Damage structure induced by high-dose helium implantation into single crystal silicon

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

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Supersaturated P-Type Polycrystaline Films Produced by Rapid Thermal Annealing of High Dose Boron Ion Implants for Interconnects and Shallow Junction Diffusion Sources

MRS Proceedings ◽

10.1557/proc-182-153 ◽

1990 ◽

Vol 182 ◽

Cited By ~ 1

Author(s):

B. Raicu ◽

M.I. Current ◽

W.A. Keenan ◽

D. Mordo ◽

R. Brennan ◽

...

Keyword(s):

Ion Implantation ◽

Single Crystal ◽

Thermal Annealing ◽

Cross Section ◽

Rapid Thermal Annealing ◽

Single Crystal Silicon ◽

High Dose ◽

Crystal Silicon ◽

Polysilicon Films ◽

P Type

AbstractHighly conductive p+-polysilicon films were fabricated over Si(100) and SiO2 surfaces using high-dose ion implantation and rapid thermal annealing. Resistivities close to that of single crystal silicon were achieved. These films were characterized by a variety of electrical and optical techniques as well as SIMS and cross-section TEM.

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Annealing of High Dose Sb‐Implanted Single‐Crystal Silicon

Journal of The Electrochemical Society ◽

10.1149/1.2113720 ◽

1985 ◽

Vol 132 (12) ◽

pp. 3048-3052 ◽

Cited By ~ 12

Author(s):

E. Guerrero ◽

H. Pötzl ◽

G. Stingeder ◽

M. Grasserbauer ◽

K. Piplitz ◽

...

Keyword(s):

Single Crystal ◽

Single Crystal Silicon ◽

High Dose ◽

Crystal Silicon

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Structure of Ion-Implanted Silicon After Electron Beam Annealing

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s1431927600001288 ◽

1980 ◽

Vol 38 ◽

pp. 306-307

Author(s):

P. J. Smith ◽

J. M. Leas ◽

A. T. Leighton

Keyword(s):

Electron Beam ◽

High Temperature ◽

Single Crystal ◽

Single Crystal Silicon ◽

Amorphous Layer ◽

High Dose ◽

Device Structure ◽

Crystal Silicon ◽

Crystal Material ◽

Ion Implanted

High dose ion-implantation into single crystal silicon produces an amorphous layer which must be removed by high temperature annealing. Laser and electron beam annealing, which bring only the top surface of the silicon to a high temperature, can produce more perfect single crystal material than conventional thermal annealing while avoiding the disadvantages of heating the entire wafer. We have found that electron beam annealing of oxide- defined silicon devices can produce dislocation-free single crystal material from amorphous ion-implanted layers, but the results are strongly dependent on both the electron beam parameters and the initial device structure.

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XTEM analysis of buried layer structure of silicon-on-insulator materials

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100176460 ◽

1990 ◽

Vol 48 (4) ◽

pp. 666-668

Author(s):

Ni Rushan ◽

Lin Chenglu

Keyword(s):

Silicon Nitride ◽

Single Crystal ◽

Oxide Layer ◽

Silicon Oxide ◽

Single Crystal Silicon ◽

Silicon On Insulator ◽

High Dose ◽

Main Concern ◽

Crystal Silicon ◽

Silicon Oxide Layer

It Is well known that a buried silicon nitride or silicon oxide layer in silicon can be formed by high dose >150 KeV nitrogen or oxygen implantation into single crystal silicon followed by high temperature annealing. This is one of the techniques to produce silicon-on-insulator (SOI) structures which is promising for a variety of potential application in VLSI, high-voltage devices, high density CMOS circuits and possibly 3-dimensional integration, etc. The main concern is how to produce a buried dielective layer with good insulating properties and with a high quality single crystal silicon overlayer on it.In this paper the microstructures of buriea silicon nitride and silicon oxide layer of the SOI materials formed by N+ or O+ implantation in single-crystal silicon are studied oy means of cross-sectional transmission electron microscopy (XTEM) and infrared (IR) absorption measurements.

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