Mask-edge effects at low ion implantation energies for cluster covered silicon

1999 ◽  
Vol 266 (4) ◽  
pp. 345-355 ◽  
Author(s):  
O.V Hul'ko ◽  
D Danailov ◽  
D Karpuzov ◽  
M Zinke-Allmang
Keyword(s):  
Ion Implantation ◽  
Edge Effects ◽  
Mask Edge

Mask-Edge Distributions Produced by 80 KeV As+ Ion Implantation Into Si

1996 ◽  
Vol 439 ◽  
Author(s):  
D. Danailov ◽  
D. Karpuzov ◽  
A. Almazouzi ◽  
P.De Almeida ◽  
M. Victoria
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Simple Model ◽  
Ion Implantation ◽  
Computer Code ◽  
Target Atom ◽  
Mask Edge ◽  
Computer Procedure

AbstractThe 2D-dopant and defect distributions resulting from 80 keV ion implantation of As+ ions into Si through a high-edge mask are presented. The distributions are obtained by means of an efficient computer procedure using the results of Monte Carlo simulation. Two versions of the computer code TRIM are used. The 2D-target atom redistribution is obtained as a result of cascade collisions. The simulation reveals the effect of near-mask-edge target atom depletion. This effect is related to the recoil phenomena and can be explained on the basis of simple model.

Characterizing the dependence of thick-mask edge effects on illumination angle using AIMS images

2015 ◽  
Author(s):  
Aamod Shanker ◽  
Martin Sczyrba ◽  
Falk Lange ◽  
Brid Connolly ◽  
Andy Neureuther ◽  
...  
Keyword(s):  
Edge Effects ◽  
Mask Edge

Defects Related To Electrical-Leakage In Tmos Structures

1994 ◽  
Vol 354 ◽  
Author(s):  
Lynnita Knoch ◽  
N. David Theodore ◽  
Pak Tam ◽  
Taku Yamamoto
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ion Implantation ◽  
Source Region ◽  
Stacking Faults ◽  
Transmission Electron ◽  
Edge Defects ◽  
Induced Defects ◽  
Electrical Data ◽  
Mask Edge

AbstractTMOS devices for power applications use ion-implantation for doped layers. Implant-damage can increase electrical leakage of devices. Transmission electron microscopy was used to study the effect of dose (4E14 - 2E15 cm-2) and energy (20-40 keV) of p+ implants on damage related to leakage in TMOS structures. TEM reveals a high density of boron implant-induced defects such as end-of-range and peak-of-implant damage, boron implant-induced stacking faults and dislocations. End-of-range defects also arise from an arsenic implant, and mask-edge defects arise where arsenic-amorphized Si and crystalline Si meet in the source region. Some defects extend >0.5 μπι into the substrate. The density and the extent of defect penetration decrease with decreasing implant-dose and energy. These data correlate well with the electrical data, which show that Idss leakage decreases with decreasing p+ implant-energy and dose.

Mask edge effects in high energy implants: dopant and defect distributions

1995 ◽  
Vol 96 (1-2) ◽  
pp. 144-149 ◽  
Author(s):  
V. Privitera ◽  
V. Raineri ◽  
M. Saggio ◽  
F. Priolo ◽  
E. Rimini
Keyword(s):  
Edge Effects ◽  
High Energy ◽  
Mask Edge

Mask-Edge Distributions Produced by 80 keV As+ Ion Implantation into Si

1996 ◽  
Vol 438 ◽  
Author(s):  
D. Danailov ◽  
D. Karpuzov ◽  
A. Almazouzi ◽  
P. De Almeida ◽  
M. Victoria
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Simple Model ◽  
Ion Implantation ◽  
Computer Code ◽  
Target Atom ◽  
Mask Edge ◽  
Computer Procedure

AbstractThe 2D-dopant and defect distributions resulting from 80 keV ion implantation of As+ ions into Si through a high-edge mask are presented. The distributions are obtained by means of an efficient computer procedure using the results of Monte Carlo simulation. Two versions of the computer code TRIM are used. The 2D-target atom redistribution is obtained as a result of cascade collisions. The simulation reveals the effect of near-mask-edge target atom depletion. This effect is related to the recoil phenomena and can be explained on the basis of simple model.

Electron Diffraction Analysis of Microtwin Structures in Regrown (III) Silicon

1982 ◽  
Vol 40 ◽  
pp. 460-461
Author(s):  
P. Ling ◽  
R. Gronsky ◽  
J. Washburn
Keyword(s):  
Electron Diffraction ◽  
Ion Implantation ◽  
Diffraction Analysis ◽  
Diffraction Pattern ◽  
Direct Consequence ◽  
The Other ◽  
Electron Diffraction Analysis ◽  
Defect Microstructures ◽  
Ion Implanted

The defect microstructures of Si arising from ion implantation and subsequent regrowth for a (111) substrate have been found to be dominated by microtwins. Figure 1(a) is a typical diffraction pattern of annealed ion-implanted (111) Si showing two groups of extra diffraction spots; one at positions (m, n integers), the other at adjacent positions between <000> and <220>. The object of the present paper is to show that these extra reflections are a direct consequence of the microtwins in the material.

Applications of Photoelectron Microscopy

1976 ◽  
Vol 34 ◽  
pp. 506-507
Author(s):  
William J. Baxter
Keyword(s):  
Electron Microscopy ◽  
Thermal Decomposition ◽  
Chemical Composition ◽  
Ultraviolet Radiation ◽  
Thin Layer ◽  
Edge Effects ◽  
Electron Optics ◽  
Surface Layers ◽  
Crystalline Orientation ◽  
Fluorescent Screen

In this form of electron microscopy, photoelectrons emitted from a metal by ultraviolet radiation are accelerated and imaged onto a fluorescent screen by conventional electron optics. image contrast is determined by spatial variations in the intensity of the photoemission. The dominant source of contrast is due to changes in the photoelectric work function, between surfaces of different crystalline orientation, or different chemical composition. Topographical variations produce a relatively weak contrast due to shadowing and edge effects.Since the photoelectrons originate from the surface layers (e.g. ∼5-10 nm for metals), photoelectron microscopy is surface sensitive. Thus to see the microstructure of a metal the thin layer (∼3 nm) of surface oxide must be removed, either by ion bombardment or by thermal decomposition in the vacuum of the microscope.

Interlayer mixing in GaAs/AlxGa1-xAs heterostructures as a result of Se+ ion implantation

1988 ◽  
Vol 46 ◽  
pp. 908-909
Author(s):  
E.G. Bithell ◽  
W.M. Stobbs
Keyword(s):  
Ion Implantation ◽  
Diffusion Coefficients ◽  
Dark Field ◽  
Atomic Mass ◽  
Composition Profile ◽  
Semiconductor Heterostructures ◽  
Transmission Electron ◽  
Microscope Images ◽  
Damage Process ◽  
Electron Energy Loss

It is well known that the microstructural consequences of the ion implantation of semiconductor heterostructures can be severe: amorphisation of the damaged region is possible, and layer intermixing can result both from the original damage process and from the enhancement of the diffusion coefficients for the constituents of the original composition profile. A very large number of variables are involved (the atomic mass of the target, the mass and energy of the implant species, the flux and the total dose, the substrate temperature etc.) so that experimental data are needed despite the existence of relatively well developed models for the implantation process. A major difficulty is that conventional techniques (e.g. electron energy loss spectroscopy) have inadequate resolution for the quantification of any changes in the composition profile of fine scale multilayers. However we have demonstrated that the measurement of 002 dark field intensities in transmission electron microscope images of GaAs / AlxGa1_xAs heterostructures can allow the measurement of the local Al / Ga ratio.

Dynamic studies of silicide-mediated crystallization of amorphous silicon

1992 ◽  
Vol 50 (2) ◽  
pp. 1352-1353
Author(s):  
C. Hayzelden ◽  
J. L. Batstone
Keyword(s):  
Ion Implantation ◽  
Solid Phase ◽  
Metallic Phase ◽  
Single Crystal Substrate ◽  
Free Electrons ◽  
Melt Temperature ◽  
Transmission Electron ◽  
Crystal Substrate ◽  
High Resolution Tem

Epitaxial reordering of amorphous Si(a-Si) on an underlying single-crystal substrate occurs well below the melt temperature by the process of solid phase epitaxial growth (SPEG). Growth of crystalline Si(c-Si) is known to be enhanced by the presence of small amounts of a metallic phase, presumably due to an interaction of the free electrons of the metal with the covalent Si bonds near the growing interface. Ion implantation of Ni was shown to lower the crystallization temperature of an a-Si thin film by approximately 200°C. Using in situ transmission electron microscopy (TEM), precipitates of NiSi2 formed within the a-Si film during annealing, were observed to migrate, leaving a trail of epitaxial c-Si. High resolution TEM revealed an epitaxial NiSi2/Si(l11) interface which was Type A. We discuss here the enhanced nucleation of c-Si and subsequent silicide-mediated SPEG of Ni-implanted a-Si.Thin films of a-Si, 950 Å thick, were deposited onto Si(100) wafers capped with 1000Å of a-SiO2. Ion implantation produced sharply peaked Ni concentrations of 4×l020 and 2×l021 ions cm−3, in the center of the films.

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