High collection efficiency in chemical vapor deposited diamond particle detectors

ABSTRACTWe report a study of pulse shapes of a radiation detector with a sandwich structure fabricated from chemical vapor deposited (CVD) polycrystalline diamond. The pulse shapes were recorded at room temperature using 5.486 MeV alpha particles from 241Am source. Only “fast” component was observed in the electron predominated pulses, whereas both “fast” and “slow” components were obtained in the hole predominated pulses, suggesting that electron charge drift is prompt and no detrapping occurred. In contrast, hole charge drift is slower than expected and trapping-detrapping took place during hole travel process.

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High Collection Efficiency Thin Film Diamond Particle Detectors

MRS Proceedings ◽

10.1557/proc-487-441 ◽

1997 ◽

Vol 487 ◽

Author(s):

P. Bergonzo ◽

F. Foulon ◽

R. D. Marshall ◽

C. Jany ◽

A. Brambilla ◽

...

Keyword(s):

High Performance ◽

Collection Efficiency ◽

Diamond Particle ◽

Chemical Vapour ◽

Particle Detectors ◽

Alternative Approach ◽

Interesting Candidate ◽

The Mean ◽

Quality Material ◽

Accessible Form

AbstractDiamond is a resilient material with rather extreme electronic properties. As such it is an interesting candidate for the fabrication of high performance solid state particle detectors. However, the commercially accessible form of diamond, grown by chemical vapour deposition (CVD) methods, is polycrystalline in nature and often displays rather poor electrical characteristics. This paper considers ways in which this material may be used to form alpha particle detectors with useful performance levels. One approach adopted has been to reduce the impurity levels within the feed-stock gases that are used to grow the diamond films. This has enabled significant improvements to be achieved in the mean carrier drift distance within the films leading to alpha detectors with up to 40% collection efficiencies. An alternative approach explored is the use of planar device geometries whereby charge collection is limited to the top surface of the diamond which comprises higher quality material than the bulk of the film. This has lead to collection efficiencies of 70%, the highest yet reported for polycrystalline CVD diamond based detectors. Techniques for improving the characteristics of these devices further are discussed.

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Ion Beam Induced Interfacial Reactions in Molybdenum Thin Films on Silicon

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100097466 ◽

1981 ◽

Vol 39 ◽

pp. 162-163

Author(s):

L. J. Chen ◽

L. S. Hung ◽

J. W. Mayer

Keyword(s):

Ion Beam ◽

Chemical Vapor ◽

Interfacial Reactions ◽

Practical Applications ◽

Microelectronic Devices ◽

Recent Emergence ◽

Chemical Vapor Deposited ◽

Atomic Mixing ◽

Silicon Interface ◽

Kinetics Of

When an energetic ion penetrates through an interface between a thin film (of species A) and a substrate (of species B), ion induced atomic mixing may result in an intermixed region (which contains A and B) near the interface. Most ion beam mixing experiments have been directed toward metal-silicon systems, silicide phases are generally obtained, and they are the same as those formed by thermal treatment.Recent emergence of silicide compound as contact material in silicon microelectronic devices is mainly due to the superiority of the silicide-silicon interface in terms of uniformity and thermal stability. It is of great interest to understand the kinetics of the interfacial reactions to provide insights into the nature of ion beam-solid interactions as well as to explore its practical applications in device technology.About 500 Å thick molybdenum was chemical vapor deposited in hydrogen ambient on (001) n-type silicon wafer with substrate temperature maintained at 650-700°C. Samples were supplied by D. M. Brown of General Electric Research & Development Laboratory, Schenectady, NY.

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Metal Microstructures in Advanced CMOS Devices

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100164258 ◽

1996 ◽

Vol 54 ◽

pp. 358-359

Author(s):

L. M. Gignac ◽

K. P. Rodbell

Keyword(s):

Grain Boundaries ◽

Semiconductor Device ◽

Chemical Vapor ◽

Microstructural Characterization ◽

Metal Films ◽

Thin Metal ◽

Electrical Performance ◽

Thin Metal Films ◽

Chemical Vapor Deposited ◽

Boundary Properties

As advanced semiconductor device features shrink, grain boundaries and interfaces become increasingly more important to the properties of thin metal films. With film thicknesses decreasing to the range of 10 nm and the corresponding features also decreasing to sub-micrometer sizes, interface and grain boundary properties become dominant. In this regime the details of the surfaces and grain boundaries dictate the interactions between film layers and the subsequent electrical properties. Therefore it is necessary to accurately characterize these materials on the proper length scale in order to first understand and then to improve the device effectiveness. In this talk we will examine the importance of microstructural characterization of thin metal films used in semiconductor devices and show how microstructure can influence the electrical performance. Specifically, we will review Co and Ti silicides for silicon contact and gate conductor applications, Ti/TiN liner films used for adhesion and diffusion barriers in chemical vapor deposited (CVD) tungsten vertical wiring (vias) and Ti/AlCu/Ti-TiN films used as planar interconnect metal lines.

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