Environmental Influence on the Tolerance of Corn to Atrazine

Weed Science ◽  
1970 ◽  
Vol 18 (4) ◽  
pp. 509-514 ◽  
Author(s):  
Lafayette Thompson ◽  
F. W. Slife ◽  
H. S. Butler

Corn(Zea maysL.) in the two to three-leaf stage grown 18 to 21 days in a growth chamber under cold, wet conditions was injured by postemergence application of 2-chloro-4-(ethylamino)-6-(isopropylamino)-s-triazine (atrazine) plus emulsifiable phytobland oil. Injury was most severe when these plants were kept under cold, wet conditions for 48 hr after the herbicidal spray was applied, followed by exposure to high light intensity and high temperature. Under these growth chamber conditions, approximately 50% of the atrazine-treated plants died. Since wet foliage before and after application increased foliar penetration and low temperature decreased the rate of detoxication to peptide conjugates, atrazine accumulated under cold, wet conditions. This accumulation of foliarly-absorbed atrazine and the “weakened” conditions of the plants grown under the stress conditions is believed to be responsible for the injury to corn. Hydroxylation and the dihydroxybenzoxazin-3-one content in the roots were reduced at low temperature, but it is unlikely that this contributed to the death of the corn.

2009 ◽  
Vol 34 (12) ◽  
pp. 2196-2201 ◽  
Author(s):  
Xue-Li QI ◽  
Lin HU ◽  
Hai-Bin DONG ◽  
Lei ZHANG ◽  
Gen-Song WANG ◽  
...  

1992 ◽  
Vol 258 ◽  
Author(s):  
N.W. Wang ◽  
P.A. Morin ◽  
V. Chu ◽  
S. Wagner

ABSTRACTIt is a question as yet unresolved whether the density of light-induced defects in a-Si:H reaches a saturated value that cannot fundamentally be exceeded, or whether the defect density is in all conditions a steady-state value that reflects carrier concentration and temperature. In our experiments on a-Si:H we have observed defect saturation at low temperature and high light intensity; on the other hand, data exhibiting no saturation have also been published. To learn more about this question we have carried out saturation experiments on a-SiGe:H(F) alloys. These alloys have lower defect freeze-in temperatures than a-Si:H and, presumably, lower annealing energies. Therefore, saturation should be more difficult to achieve in the alloys than in a-Si:H.We have studied saturation for a-SiGe:H(F) samples to temperatures above the onset of thermal annealing and have observed that its behavior is similar to that seen in a-Si:H.


1998 ◽  
Vol 131 (3) ◽  
pp. 277-283 ◽  
Author(s):  
D. ROUSSOPOULOS ◽  
A. LIAKATAS ◽  
W. J. WHITTINGTON

A series of experiments investigating the interactive effects of light and temperature on vegetative growth, earliness, fruiting, yield and fibre properties in three cultivars of cotton, was undertaken in growth rooms. Two constant day/night temperature regimes with a difference of 4 °C (30/20 and 26/16·5 °C) were used throughout the growing season in combination with two light intensities (75 and 52·5 W m−2).The results showed that significant interactions occurred for most of the characters studied. Although the development of leaf area was mainly temperature-dependent, plants at harvest had a larger leaf area when high temperature was combined with low rather than with high light intensity. Leaf area was least in the low temperature–low light regime. However, the plants grown under the high temperature–low light combination weighed the least.Variations in the number of nodes and internode length were largely dependent on temperature rather than light. Light did, however, affect the numbers of branches, sympodia and monopodia. The first two of these were highest in the high light–high temperature regime and the third in the low light–low temperature regime.All other characters, except time to certain developmental stages and fibre length, were reduced at the lower light intensity. Variation in temperature modified the light effect and vice versa, in a character-dependent manner. More specifically, square and boll dry weights, as well as seed cotton yield per plant, were highest in high light combined with low temperature, where the most and heaviest bolls were produced. But flower production was favoured by high light and high temperature, suggesting increased boll retention at low temperature, especially when combined with low light. Low temperature and high light also maximized lint percentage.Fibres were shortest in the high temperature–high light regime, where fibre strength, micronaire index and maturity ratio were at a maximum. However, the finest and the most uniform fibres were produced when high light was combined with low temperature.Cultivar differences were significant mainly in leaf area and dry matter production at flowering.


2001 ◽  
Vol 10 (3) ◽  
pp. 153-163 ◽  
Author(s):  
M.M. SEPPÄNEN ◽  
O. NISSINEN ◽  
S. PERÄLÄ

Four Solanum tuberosum L. cultivars (Nicola, Pito, Puikula, Timo) and somatic hybrids between freezing tolerant S. commersonii and freezing sensitive S. tuberosum were evaluated for their tolerance to freezing and low temperature photoinhibition. Cellular freezing tolerance was studied using ion leakage tests and the sensitivity of the photosynthetic apparatus to freezing and high light intensity stress by measuring changes in chlorophyll fluorescence (FV/FM) and oxygen evolution. Exposure to high light intensities after freezing stress increased frost injury significantly in all genotypes studied. Compared with S. tuberosum cultivars, the hybrids were more tolerant both of freezing and intense light stresses. In field experiments the mechanism of frost injury varied according to the severity of night frosts. During night frosts in 1999, the temperature inside the potato canopy was significantly higher than at ground level, and did not fall below the lethal temperature for potato cultivars (from -2.5 to -3.0°C). As a result, frost injury developed slowly, indicating that damage occurred to the photosynthetic apparatus. However, as the temperature at ground level and inside the canopy fell below -4°C, cellular freezing occurred and the canopy was rapidly destroyed. This suggests that in the field visual frost damage can follow from freezing or non-freezing temperatures accompanied with high light intensity. Therefore, in an attempt to improve low temperature tolerance in potato, it is important to increase tolerance to both freezing and chilling stresses.


1959 ◽  
Vol 7 (1) ◽  
pp. 68-74
Author(s):  
J.F. Harrington ◽  
K. Verkerk ◽  
J. Doorenbos

Vernalization of germinating endive seed or of young endive plants hastened floral initiation, but at the expense of vegetative growth. High temperatures after vernalization promoted bolting. Long days hastened bolting in both vernalized and non-vernalized plants, again at the expense of vegetative growth. A limited period of short days immediately after sowing also promoted flowering, and it is suggested that such short-day treatment may act as a partial substitute for low temperature. High light intensity had a supplementary effect in promoting bolting but, in contrast to vernalization and long days, caused more rapid vegetative growth than low light intensity.-Lab. TuinbPl., Wageningen. (Abstract retrieved from CAB Abstracts by CABI’s permission)


2013 ◽  
Vol 1493 ◽  
pp. 253-259
Author(s):  
Adam F. Halverson ◽  
Loucas Tsakalakos

ABSTRACTWire array solar cells benefit from enhanced coupling of light into the active area of the device, significantly decreased collection lengths due to radial charge separation and collection, and easier access to grain boundaries for passivation which may enable future deposition on non-wafer substrates. We report on an analysis of the junction operation of wire array based GaAs solar cells through temperature and light intensity dependent current-voltage analysis and compare these data to matched planar devices. We see evidence of non-ideal recombination pathways indicated by activation energies for generation-recombination that are significantly less than the band gap of GaAs. We observe voltage shifts in the wire array devices at low temperature and high light intensity that we posit can be explained by electron accumulation in the window layers of the devices.


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