High Resolution Electron Microscope Using a New 200 kV Electron Gun

1977 ◽  
Vol 35 ◽  
pp. 60-61
Author(s):  
S. Kamimura ◽  
T. Katsuta ◽  
Y. Minamikawa
Keyword(s):  
Electron Microscope ◽  
Epoxy Resin ◽  
Electron Gun ◽  
Insulation Property ◽  
Operation And Maintenance ◽  
Transmission Electron ◽  
Resolution Electron ◽  
High Resolution Electron Microscope ◽  
Electron Microscopes ◽  
Application Fields

Higher accelerating voltage has been required of transmission electron microscopes in various research and application fields. In this report, a new electron gun developed by Hitachi, Ltd. will be described. The aim of this development was to design a compact 200 kV electron microscope offering simplicity and convenience of operation and maintenance and the highest possible performance.Description will be made first on the packaged electron gun. Fig. 1 shows the sectional view of the gun. The accelerating tube is built in the gun housing so as to be free from exterior impact. Unlike the conventional gun housing, this one is made of epoxy resin instead of metal. The inside diameter of the housing is reduced to 170 mm due to the excellent insulation property of epoxy resin. A bushing for high voltage cable is mounted on the housing, making its withstand voltage high in spite of the short contour of the housing (140 mm).

Electron Microscope Studies of Some Vapor Deposited Materials: Nucleation, Epitaxial Growth and Surface Topography

1991 ◽  
Vol 237 ◽  
Author(s):  
William Krakow
Keyword(s):  
Electron Microscope ◽  
Epitaxial Growth ◽  
Three Dimensional ◽  
Film Surface ◽  
Ex Situ ◽  
Growth Regime ◽  
Growth Modes ◽  
Transmission Electron ◽  
Resolution Electron ◽  
High Resolution Electron Microscope

ABSTRACTThe nucleation and epitaxial growth of deposits at both low and high temperature substrate conditions and the resulting two and three dimensional growth modes have been investigated using electron diffraction and transmission electron microscopy. At high temperatures, the growth of small particles such as Au, Pt and Ge grown under low rate conditions similar to MBE are revealed by lattice imaging. Using an intermediate bufler layer Ag film, surface growth of (100) and (310) Au thin film layers are revealed by diffraction contrast to be in a step ledge growth regime. While the above investigations were performed ex situ to the microscope vacuum environment, an in situ evaporator has been also been installed on a high resolution electron microscope. Observations can be made in real time of cluster growth from atomic diameters on up. The resulting atomic motion around cluster edges is similar in appearance to surface melting.

scholarly journals FEI Titan 80-300 STEM

2016 ◽  
Vol 2 ◽  
Author(s):  
Marc Heggen ◽  
Martina Luysberg ◽  
Karsten Tillmann
Keyword(s):  
Electron Microscope ◽  
Scanning Transmission Electron Microscope ◽  
Electron Gun ◽  
Lens System ◽  
Scanning Transmission Electron ◽  
System A ◽  
Transmission Electron ◽  
The World ◽  
Scanning Transmission ◽  
Electron Microscopes

The FEI Titan 80-300 STEM is a scanning transmission electron microscope equipped with a field emission electron gun, a three-condenser lens system, a monochromator unit, and a Cs probe corrector (CEOS), a post-column energy filter system (Gatan Tridiem 865 ER) as well as a Gatan 2k slow scan CCD system. Characterised by a STEM resolution of 80 pm at 300 kV, the instrument was one of the first of a small number of sub-ångström resolution scanning transmission electron microscopes in the world when commissioned in 2006.

Real-time computer simulation of electron microscope images via a digital television frame store system

1986 ◽  
Vol 44 ◽  
pp. 542-543
Author(s):  
W. Krakow
Keyword(s):  
Electron Microscope ◽  
Real Time ◽  
Optical Diffraction ◽  
Digital Television ◽  
Software Packages ◽  
Resolution Electron ◽  
Computational Speed ◽  
Microscope Images ◽  
High Resolution Electron Microscope ◽  
Electron Microscopes

Digital television frame store devices and software packages have made it possible to obtain images directly from electron microscopes, photographic prints and transparencies in real time and obtain the power spectrum (optical diffraction pattern) and filtered image of various electron micrographs. Enhancements have been added to the Fourier analysis program package which include the use of offset filter functions and the computation of high resolution electron microscope images by including the microscope lens aberration phase shifts and illumination conditions. Because of the use of the frame store and a large mainframe computer, it is possible to have several orders of magnitude gain in image computational speed which makes real-time interactive computations possible.

Temperature Monitoring of an EM Environment

2006 ◽  
Vol 14 (1) ◽  
pp. 24-29 ◽  
Author(s):  
Denis Fellmann ◽  
Rachel Bañez ◽  
Bridget Carragher ◽  
Clinton S. Potter
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Temperature Stability ◽  
Temperature Variations ◽  
Multiple Exposures ◽  
Transmission Electron ◽  
Resolution Electron ◽  
Electron Microscopes ◽  
The Stability ◽  
Modern Instrumentation

The ultimate performance of high resolution electron microscopes depends on a variety of factors including the stability of the temperature surrounding the instrument. Variations in temperature can cause drift of the specimen, the microscope electronics, and the mechanical tolerances in components such as microscope lenses and scan coils. For high resolution work or for image reconstruction that requires acquisition of multiple exposures over extended periods of time, it is critical that the temperature variations be strictly controlled. A typical manufacturer's specification for temperature stability of a room housing a transmission electron microscope (TEM) is a tolerance of <0.5°C/hour with fluctuations of <0.05°C/minute. While modern instrumentation rooms are carefully designed to maintain stable environmental conditions (O'Keefe etal, 2004), it seems unlikely that these stringent specifications are routinely met in practice when the microscope is in operation and personnel are present in the room.

Scanning Device Combined with Conventional Electron Miscroscope

1971 ◽  
Vol 29 ◽  
pp. 28-29
Author(s):  
H. Koike ◽  
K. Ueno ◽  
M. Suzuki
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Basic Function ◽  
Transmission Electron ◽  
Resolution Electron ◽  
Different Types ◽  
Specimen Area ◽  
High Resolution Electron Microscope ◽  
Scanning Em ◽  
Conventional Transmission Electron Microscope

A scanning image observation device has been developed for use in conjunction with the JEM-100B Electron Microscope, thereby enabling the microscope to function as a high resolution scanning EM in addition to its basic function as a conventioanl high resolution electron microscope. As a result, it is possible to observe three different types of image of the same specimen area; viz, secondary electron images, transmission scanning images and conventional transmission electron microscope images. It is also possible to detect strays and obsorbed electrons, so that, the combined instrument provides a means for obtaining a wealth of information about the specimen.

300kv high-performance analytical TEM (H-9000)

1987 ◽  
Vol 45 ◽  
pp. 108-109
Author(s):  
H. Kobayashi ◽  
H. Sato ◽  
K. Miyauchi ◽  
T. Onai ◽  
K. Shii ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Microscope ◽  
High Performance ◽  
Image Resolution ◽  
X Ray ◽  
Transmission Electron ◽  
Resolution Electron ◽  
Analytical Microscopy ◽  
High Resolution Electron Microscope

Higher voltage operation has many advantages for transmission electron microscopy.These advantages include better TEM image resolution and ease of specimen imaging. For analytical microscopy, the higher voltage operation has advantages such as higher source brightness, and better spatial resolution.We reported development of a 300kV ultra high resolution electron microscope. At this time, we would like to report an analytical type 300kV electron microscope.We have incorporated a side entry specimen stage which permits ±45° specimen tilt and is convenient for characteristic x-ray detection. We have also incorporated an analytical objective polepiece which has Cs of 2. 5mm, Cc of 2. 3mm and theoretical TEM image resolution of 0.23nm.

Transmission Electron Microscopy of II-VI/III-V Semiconductor Heteroepitaxial Interfaces

1989 ◽  
Vol 161 ◽  
Author(s):  
D. Li ◽  
N. Otsuka ◽  
J. Qiu ◽  
J. Glenn ◽  
M. Kobayashi ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Microscope ◽  
Molecular Beam ◽  
Dark Field ◽  
Group Iii ◽  
Transmission Electron ◽  
Resolution Electron ◽  
Microscope Images ◽  
High Resolution Electron Microscope

ABSTRACTInterfaces of pseudomorphic (100)ZnSe/GaAs and (100)CdTe/InSb heterostructures grown by molecular beam epitaxy have been studied by transmission electron microscopy. High resolution electron microscope images show dark bands with thicknesses of one or two monolayers at the interfaces. The interfaces appear as bright lines in dark field images of the 200 type reflections, while they become dark lines in dark field images of the 400 type reflections. These observations are explained by assuming the existence of interfaces layers of III2VI3 compounds which have structural vacancies in the sublattices of the group III atoms.

Direct observations of semithin sections by the use of TEM and STEM

1978 ◽  
Vol 36 (2) ◽  
pp. 104-105
Author(s):  
Toshio Sakai
Keyword(s):  
Electron Microscope ◽  
Epoxy Resin ◽  
Transmission Electron Microscope ◽  
Scanning Transmission Electron Microscope ◽  
Direct Observations ◽  
Transmission Electron ◽  
Semithin Sections ◽  
Scanning Transmission ◽  
Electron Microscopes ◽  
Rats And Mice

It has been routin to cut semithin sections to look for desired areas before cutting ultrathin sections for electron microscope studies. A new method made it possible to observe larger semithin sections of epoxy resin-embedded tissue with both light microscope and two kinds of electron microscopes,: Transmission Electron Microscope and Scanning Transmission Electron Microscope.Samples obtained from kidneys of rats and mice were sliced to 0. 5.mm to 1 mm thickness. They were fixed for 4 hours in Sorensen phosphate buffer of pH 7.4, containing 2 % glutaraldehyde and 1.5 % paraformaldehyde, rinsed in plain buffer for 12 hours (overnight) and postfixed in 1 % osmium tetroxide buffered with phosphate for 90 minutes. The tissu blocks were then embedded in epoxy resin in a ratio of 6:4 or 5:5 by weight, based on the method of Luft.

Surface studies with a UHV-TEM

1992 ◽  
Vol 50 (1) ◽  
pp. 326-327
Author(s):  
David J. Smith ◽  
M. Gajdardziska-Josifovska ◽  
M.R. McCartney
Keyword(s):  
Electron Microscope ◽  
Surface Profile ◽  
High Energy ◽  
Operating Modes ◽  
Transmission Imaging ◽  
Transmission Electron ◽  
Resolution Electron ◽  
Reflection Electron Microscopy ◽  
High Resolution Electron Microscope

The provision of ultrahigh vacuum capabilities, as well as in situ specimen treatment and annealing facilities, makes the transmission electron microscope into a potentially powerful instrument for the characterization of surfaces. Several operating modes are available, including surface profile imaging, reflection electron microscopy (REM), and reflection high energy electron diffraction (RHEED), as well as conventional transmission imaging and diffraction. All of these techniques have been utilized in our recent studies of surface structures and reactions for various metals, oxides and semiconductors with our modified Philips-Gatan 430ST high-resolution electron microscope.

scholarly journals The Mechanism of {113} Defect Formation in Silicon: Clustering of Interstitial–Vacancy Pairs Studied by In Situ High-Resolution Electron Microscope Irradiation

2013 ◽  
Vol 19 (S5) ◽  
pp. 38-42 ◽  
Author(s):  
Ludmila I. Fedina ◽  
Se Ahn Song ◽  
Andrey L. Chuvilin ◽  
Anton K. Gutakovskii ◽  
Alexander V. Latyshev
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Point Defect ◽  
Defect Formation ◽  
Silicon Crystal ◽  
Equilibrium Structure ◽  
Transmission Electron ◽  
Resolution Electron ◽  
Atomic Chains ◽  
High Resolution Electron Microscope

AbstractWe report the direct visualization of point defect clustering in {113} planes of silicon crystal using a transmission electron microscope, which was supported by structural modeling and high-resolution electron microscope image simulations. In the initial stage an accumulation of nonbonded interstitial–vacancy (I–V) pairs stacked at a distance of 7.68 Å along neighboring atomic chains located on the {113} plane takes place. Further broadening of the {113} defect across its plane is due to the formation of planar fourfold coordinated defects (FFCDs) perpendicular to chains accumulating I–V pairs. Closely packed FFCDs create a sequence of eightfold rings in the {113} plane, providing sites for additional interstitials. As a result, the perfect interstitial chains are built on the {113} plane to create an equilibrium structure. Self-ordering of point defects driven by their nonisotropic strain fields is assumed to be the main force for point defect clustering in the {113} plane under the existence of an energy barrier for their recombination.

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