Defects in Crystals

1968 ◽  
Vol 26 ◽  
pp. 244-245
Author(s):  
Kenneth R. Lawless
Keyword(s):  
Electron Microscope ◽  
Point Defects ◽  
Surface Defects ◽  
Chemical Properties ◽  
Material Point ◽  
Crystal Defects ◽  
Defects In Crystals ◽  
Irradiation Effects ◽  
Normal Lattice ◽  
Line Defects

One of the most important applications of the electron microscope in recent years has been to the observation of defects in crystals. Replica techniques have been widely utilized for many years for the observation of surface defects, but more recently the most striking use of the electron microscope has been for the direct observation of internal defects in crystals, utilizing the transmission of electrons through thin samples.Defects in crystals may be classified basically as point defects, line defects, and planar defects, all of which play an important role in determining the physical or chemical properties of a material. Point defects are of two types, either vacancies where individual atoms are missing from lattice sites, or interstitials where an atom is situated in between normal lattice sites. The so-called point defects most commonly observed are actually aggregates of either vacancies or interstitials. Details of crystal defects of this type are considered in the special session on “Irradiation Effects in Materials” and will not be considered in detail in this session.

scholarly journals Application of HVEM to the Study of Radiation Damage in Metals

1973 ◽  
Vol 31 ◽  
pp. 10-11
Author(s):  
J.J. Laidler ◽  
B. Mastel
Keyword(s):  
Electron Microscopy ◽  
Radiation Damage ◽  
Point Defects ◽  
Beam Current ◽  
Crystal Defects ◽  
Continuous Observation ◽  
Irradiation Effects ◽  
High Voltage Electron Microscopy ◽  
Atomic Displacements ◽  
Voltage Electron

One aspect of high voltage electron microscopy, which is normally considered to be a disadvantage in the usual materials studies, is the production of atomic displacements or radiation damage in the specimen. This imposes limitations on beam current, accelerating voltage used or time of observation if one is concerned with measurements which are sensitive to the presence of point defects. This limiting aspect can be turned into a major asset, however, in the case of investigations involving the study of irradiation effects in metals and alloys. The HVEM has a special advantage in such studies, since it makes possible the continuous observation of the accumulation of crystal defects during the process of irradiation.

The Imaging of Crystal Structures and Crystal Defects

1978 ◽  
Vol 36 (3) ◽  
pp. 207-217
Author(s):  
J.M. Cowley
Keyword(s):  
Electron Microscope ◽  
Crystal Structures ◽  
Phase Contrast ◽  
Crystal Defects ◽  
Atom Density ◽  
Lack Of Information ◽  
Spatial Frequencies

The problem of "understandinq" electron microscope imaqes becomes more acute as the resolution is improved. The naive interpretation of an imaqe as representinq the projection of an atom density becomes less and less appropriate. We are increasinqly forced to face the complexities of coherent imaqinq of what are essentially phase objects. Most electron microscopists are now aware that, for very thin weakly scatterinq objects such as thin unstained bioloqical specimens, hiqh resolution imaqes are best obtained near the optimum defocus, as prescribed by Scherzer, where the phase contrast imaqe qives a qood representation of the projected potential, apart from a lack of information on the lower spatial frequencies. But phase contrast imaqinq is never simple except in idealized limitinq cases.

Contrast From Point Defects in The Infinitesimal Approximation

1980 ◽  
Vol 38 ◽  
pp. 350-351
Author(s):  
L. J. Sykes ◽  
J. J. Hren
Keyword(s):  
Electron Microscope ◽  
Point Defects ◽  
Broad Class ◽  
Stacking Fault ◽  
Crystalline Solids ◽  
Dislocation Loops ◽  
Analytical Expression ◽  
Stacking Fault Tetrahedra

In electron microscope studies of crystalline solids there is a broad class of very small objects which are imaged primarily by strain contrast. Typical examples include: dislocation loops, precipitates, stacking fault tetrahedra and voids. Such objects are very difficult to identify and measure because of the sensitivity of their image to a host of variables and a similarity in their images. A number of attempts have been made to publish contrast rules to help the microscopist sort out certain subclasses of such defects. For example, Ashby and Brown (1963) described semi-quantitative rules to understand small precipitates. Eyre et al. (1979) published a catalog of images for BCC dislocation loops. Katerbau (1976) described an analytical expression to help understand contrast from small defects. There are other publications as well.

On the defects of enamel coatings

2019 ◽  
pp. 145-150
Author(s):  
T. O. Soshina ◽  
V. R. Mukhamadyarovа
Keyword(s):  
Heat Treatment ◽  
Surface Tension ◽  
Electron Microscope ◽  
Enamel Coating ◽  
Surface Defects ◽  
Linear Expansion ◽  
Corrosion Properties ◽  
Treatment Conditions ◽  
Mechanical And Corrosion Properties ◽  
Coefficient Of Linear Expansion

The defects destroy the integrity of the enamel, and the paper examines the influence of the physical-mechanical and corrosion properties of frits and heat treatment on the defectiveness of the enamel coating. The surface defects were scanned by electron microscope. It has been established that the defectiveness of enamel coatings depends on the melting index, temperature coefficient of linear expansion, surface tension of the frits, and heat treatment conditions. When burning rate of the enamel coating decreases, the fine-meshed structure of the enamel changes, and the size of the defects decreases.

The Use of Metallography for Examination of Causes of Surface Defects on Visual Parts

2017 ◽  
Vol 270 ◽  
pp. 107-111
Author(s):  
Zuzana Andršová ◽  
Pavel Kejzlar
Keyword(s):  
Sample Preparation ◽  
Cross Section ◽  
Surface Defects ◽  
Chemical Properties ◽  
Physical And Chemical Properties ◽  
Visual Appearance ◽  
Visual Defects ◽  
Physical And Chemical ◽  
Microscopic Techniques ◽  
And Chemical Properties

Many of currently manufactured components intended for automotive, must not only meet the requirements on functionality, but also considerable demands on the visual appearance. Parts are subjected to thorough inspection and suppliers are forced to deal with causes of a very slight visual defects. When examining the defects, it is necessary to use a whole range of advanced analytical methods and procedures previously used only for identification of the physical and chemical properties and structure of the material. This paper deals with several examples which have been solved. It focuses especially on the use of demanding metallographic sample preparation from components with surface defects, examining the defects on the cross-section using mainly microscopic techniques and determining the causes of their generation. These results then serve as a basis for modification of the technology and thus they are the tool for significant reduction of amount of NOK parts.

Multi-scale modeling of self-irradiation effects in plutonium alloys - Molecular dynamic simulations results

2005 ◽  
Vol 893 ◽  
Author(s):  
Lilian Berlu ◽  
Gaelle Rosa ◽  
Philippe Faure ◽  
Nathalie Baclet ◽  
Gérald Jomard
Keyword(s):  
Point Defects ◽  
Metal Structure ◽  
Irradiation Effects ◽  
Dynamic Simulations ◽  
Α Decay ◽  
Multi Scale ◽  
Scale Modeling ◽  
Energy Cascades ◽  
First Results ◽  
Multi Scale Modeling

AbstractThe plutonium α decay leads to the formation of numerous point defects in the metal structure. The multi-scale modeling of self-irradiation effects in plutonium alloys needs a quantitative knowledge of defects population properties. In this work, we initiated a parametric study of molecular dynamics displacement cascade simulations to get properties of defects microstructure such as number of point defects, number and size of clusters, spatial repartition and spatial expansion of the cascade. These data constitute some of the input parameters for the mesoscopic scale simulations. First results obtained for two 2 keV energy cascades simulations are presented and discussed.

Group III-Sb Metamorphic Buffer on Si for p-Channel all-III-V CMOS: Electrical Properties, Growth and Surface Defects

2015 ◽  
Vol 1790 ◽  
pp. 13-18
Author(s):  
Shun Sasaki ◽  
Shailesh Madisetti ◽  
Vadim Tokranov ◽  
Michael Yakimov ◽  
Makoto Hirayama ◽  
...  
Keyword(s):  
Surface Defects ◽  
Lattice Mismatch ◽  
Chemical Properties ◽  
Antiphase Domain ◽  
Hole Transport ◽  
Heteroepitaxial Growth ◽  
Group Iii ◽  
Similar Chemical ◽  
Unintentional Doping ◽  
P Type

ABSTRACTGroup III-Sb compound semiconductors are promising materials for future CMOS circuits. Especially, In1-xGaxSb is considered as a complimentary p-type channel material to n-type In1-xGaxAs MOSFET due to the superior hole transport properties and similar chemical properties in III-Sb’s to those of InGaAs. The heteroepitaxial growth of In1-xGaxSb on Si substrate has significant advantage for volume fabrication of III-V ICs. However large lattice mismatch between InGaSb and Si results in many growth-related defects (micro twins, threading dislocations and antiphase domain boundaries); these defects also act as deep acceptor levels. Accordingly, unintentional doping in InGaSb films causes additional scattering, increase junction leakages and affects the interface properties. In this paper, we studied the correlations between of defects and hole carrier densities in GaSb and strained In1-xGaxSb quantum well layers by using various designs of metamorphic superlattice buffers.

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