P20 phosphor on polyimide as a large area high-resolution transmission screen for slow scan CCD systems

Author(s):  
C. C. Ahn ◽  
S. Karnes ◽  
M. Lvovsky ◽  
C. M. Garland ◽  
H. A. Atwater ◽  
...  

The bane of CCD imaging systems for transmission electron microscopy at intermediate and high voltages has been their relatively poor modulation transfer function (MTF), or line pair resolution. The problem originates primarily with the phosphor screen. On the one hand, screens should be thick so that as many incident electrons as possible are converted to photons, yielding a high detective quantum efficiency(DQE). The MTF diminishes as a function of scintillator thickness however, and to some extent as a function of fluorescence within the scintillator substrates. Fan has noted that the use of a thin layer of phosphor beneath a self supporting 2μ, thick Al substrate might provide the most appropriate compromise for high DQE and MTF in transmission electron microcscopes which operate at higher voltages. Monte Carlo simulations of high energy electron trajectories reveal that only little beam broadening occurs within this thickness of Al film. Consequently, the MTF is limited predominantly by broadening within the thin phosphor underlayer. There are difficulties however, in the practical implementation of this design, associated mostly with the mechanical stability of the Al support film.

2016 ◽  
Vol 22 (6) ◽  
pp. 1198-1221 ◽  
Author(s):  
Vladimir P. Oleshko ◽  
Andrew A. Herzing ◽  
Christopher L. Soles ◽  
Jared J. Griebel ◽  
Woo J. Chung ◽  
...  

AbstractPoly[sulfur-random-(1,3-diisopropenylbenzene)] copolymers synthesized via inverse vulcanization represent an emerging class of electrochemically active polymers recently used in cathodes for Li–S batteries, capable of realizing enhanced capacity retention (1,005 mAh/g at 100 cycles) and lifetimes of over 500 cycles. The composite cathodes are organized in complex hierarchical three-dimensional (3D) architectures, which contain several components and are challenging to understand and characterize using any single technique. Here, multimode analytical scanning and transmission electron microscopies and energy-dispersive X-ray/electron energy-loss spectroscopies coupled with multivariate statistical analysis and tomography were applied to explore origins of the cathode-enhanced capacity retention. The surface topography, morphology, bonding, and compositions of the cathodes created by combining sulfur copolymers with varying 1,3-diisopropenylbenzene content and conductive carbons have been investigated at multiple scales in relation to the electrochemical performance and physico-mechanical stability. We demonstrate that replacing the elemental sulfur with organosulfur copolymers improves the compositional homogeneity and compatibility between carbons and sulfur-containing domains down to sub-5 nm length scales resulting in (a) intimate wetting of nanocarbons by the copolymers at interfaces; (b) the creation of 3D percolation networks of conductive pathways involving graphitic-like outer shells of aggregated carbons; (c) concomitant improvements in the stability with preserved meso- and nanoscale porosities required for efficient charge transport.


1990 ◽  
Vol 205 ◽  
Author(s):  
A. Van Neste ◽  
S. Kaliaguine ◽  
M. Trudeau ◽  
R. Schulz

AbstractThe structural evolution of a mixture of elemental Ni and Ru powders during high energy ball milling has been studied as a function of milling time using X-ray diffraction and transmission electron microscopy. On the Ni-rich side of the phase diagram (Ni70Ru30) we observe, during the milling, the diffusion of Ru in the Ni and an expansion of the Ni fcc lattice. After about 20 hours of milling, all the Ru has diffused into the Ni and we are left with an oversaturated Ni(Ru) fcc structure with a lattice parameter about 3.6% larger than the one of pure Ni. The Ni does not seem to diffuse into Ru during the process. On the Ru-rich side (Ni43Ru57) we observe initially the same diffusion process taking place but more rapidly. After about 8 hours of milling, the incorporation of Ru in the Ni has driven the fcc Ni lattice to its limit of stability (about 3.9% expansion) and the fcc structure transforms, upon further milling, into a new hcp structure. In the later stage of the process the remaining Ru diffuses into this new phase.


2019 ◽  
Vol 492 (1) ◽  
pp. 796-803
Author(s):  
Pranjupriya Goswami ◽  
Atreyee Sinha ◽  
Sunil Chandra ◽  
Ranjeev Misra ◽  
Varsha Chitnis ◽  
...  

ABSTRACT We report the analysis of simultaneous multiwavelength data of the high-energy-peaked blazar RGB J0710 + 591 from the Large Area X-ray Proportional Counters, Soft X-ray focusing Telescope, and Ultraviolet Imaging Telescope (UVIT) instruments onboard AstroSat. The wide band X-ray spectrum (0.35–30 keV) is modelled as synchrotron emission from a non-thermal distribution of high-energy electrons. The spectrum is unusually curved, with a curvature parameter βp ∼ 6.4 for a log parabola particle distribution, or a high-energy spectral index p2 > 4.5 for a broken power-law distribution. The spectrum shows more curvature than an earlier quasi-simultaneous analysis of Swift–XRT/NuSTAR data where the parameters were βp ∼ 2.2 or p2 ∼ 4. It has long been known that a power-law electron distribution can be produced from a region where particles are accelerated under Fermi process and the radiative losses in acceleration site decide the maximum attainable Lorentz factor, γmax. Consequently, this quantity decides the energy at which the spectrum curves steeply. We show that such a distribution provides a more natural explanation for the AstroSat data as well as the earlier XRT/NuSTAR observation, making this as the first well-constrained determination of the photon energy corresponding to γmax. This in turn provides an estimate of the acceleration time-scale as a function of magnetic field and Doppler factor. The UVIT observations are consistent with earlier optical/UV measurements and reconfirm that they plausibly correspond to a different radiative component than the one responsible for the X-ray emission.


2013 ◽  
Vol 21 (4) ◽  
pp. 36-40 ◽  
Author(s):  
Paolo Longo ◽  
Paul Thomas ◽  
Aziz Aitouchen ◽  
Bernhard Schaffer ◽  
Ray D. Twesten

With advancements in aberration-corrected electron optics, the resolution in scanning transmission electron microscopy (STEM) has been significantly improved. More importantly, the reduction of the probe size and the increase of the probe current density enable the acquisition of elemental maps at the atomic scale in a fast manner using both EELS and EDS. With the latest generations of EELS spectrometers, atomic resolution compositional and chemical maps allow interfaces, oxidation state, and even single atoms to be examined with increasing detail. These improvements have also enabled elemental and chemical maps to be acquired rapidly using both low- and high-energy edges from elements across the periodic table, including heavy atoms such Au or Pt. On the EDS side, the introduction of large-area silicon drift detectors (SDD) has allowed these high-beam-current sources to be fully utilized. Improved detector area and support for higher count rates, compared to the previous generation of EDS detectors, allows the acquisition of EDS intensity maps from most types of material in the STEM, even for moderately thin samples. For the case of light elements, the reduced detector dead layer of SDD-based systems partially overcomes the very low florescence yield typical of low-energy X-ray lines. Also as reported in, atomic-level X-ray maps using fast detectors and bright sources can now be collected under some conditions. Because EDS and EELS provide complementary information about the sample, and are both generated with the electron beam, it would be wasteful to not acquire both datasets with every sample run.


Author(s):  
P. R. Swann ◽  
W. R. Duff ◽  
R. M. Fisher

Recently we have investigated the phase equilibria and antiphase domain structures of Fe-Al alloys containing from 18 to 50 at.% Al by transmission electron microscopy and Mössbauer techniques. This study has revealed that none of the published phase diagrams are correct, although the one proposed by Rimlinger agrees most closely with our results to be published separately. In this paper observations by transmission electron microscopy relating to the nucleation of disorder in Fe-24% Al will be described. Figure 1 shows the structure after heating this alloy to 776.6°C and quenching. The white areas are B2 micro-domains corresponding to regions of disorder which form at the annealing temperature and re-order during the quench. By examining specimens heated in a temperature gradient of 2°C/cm it is possible to determine the effect of temperature on the disordering reaction very precisely. It was found that disorder begins at existing antiphase domain boundaries but that at a slightly higher temperature (1°C) it also occurs by homogeneous nucleation within the domains. A small (∼ .01°C) further increase in temperature caused these micro-domains to completely fill the specimen.


Author(s):  
L.E. Murr

The production of void lattices in metals as a result of displacement damage associated with high energy and heavy ion bombardment is now well documented. More recently, Murr has shown that a void lattice can be developed in natural (colored) fluorites observed in the transmission electron microscope. These were the first observations of a void lattice in an irradiated nonmetal, and the first, direct observations of color-center aggregates. Clinard, et al. have also recently observed a void lattice (described as a high density of aligned "pores") in neutron irradiated Al2O3 and Y2O3. In this latter work, itwas pointed out that in order that a cavity be formed,a near-stoichiometric ratio of cation and anion vacancies must aggregate. It was reasoned that two other alternatives to explain the pores were cation metal colloids and highpressure anion gas bubbles.Evans has proposed that void lattices result from the presence of a pre-existing impurity lattice, and predicted that the formation of a void lattice should restrict swelling in irradiated materials because it represents a state of saturation.


Author(s):  
Joseph J. Comer ◽  
Charles Bergeron ◽  
Lester F. Lowe

Using a Van De Graaff Accelerator thinned specimens were subjected to bombardment by 3 MeV N+ ions to fluences ranging from 4x1013 to 2x1016 ions/cm2. They were then examined by transmission electron microscopy and reflection electron diffraction using a 100 KV electron beam.At the lowest fluence of 4x1013 ions/cm2 diffraction patterns of the specimens contained Kikuchi lines which appeared somewhat broader and more diffuse than those obtained on unirradiated material. No damage could be detected by transmission electron microscopy in unannealed specimens. However, Dauphiné twinning was particularly pronounced after heating to 665°C for one hour and cooling to room temperature. The twins, seen in Fig. 1, were often less than .25 μm in size, smaller than those formed in unirradiated material and present in greater number. The results are in agreement with earlier observations on the effect of electron beam damage on Dauphiné twinning.


Author(s):  
W.K. Lo ◽  
J.C.H. Spence

An improved design for a combination Scanning Tunnelling Microscope/TEM specimen holder is presented. It is based on earlier versions which have been used to test the usefulness of such a device. As with the earlier versions, this holder is meant to replace the standard double-tilt specimen holder of an unmodified Philips 400T TEM. It allows the sample to be imaged simultaneously by both the STM and the TEM when the TEM is operated in the reflection mode (see figure 1).The resolution of a STM is determined by its tip radii as well as its stability. This places strict limitations on the mechanical stability of the tip with respect to the sample. In this STM the piezoelectric tube scanner is rigidly mounted inside the endcap of the STM holder. The tip coarse approach to the sample (z-direction) is provided by an Inchworm which is located outside the TEM vacuum.


Author(s):  
Tai D. Nguyen ◽  
Ronald Gronsky ◽  
Jeffrey B. Kortright

Nanometer period Ru/C multilayers are one of the prime candidates for normal incident reflecting mirrors at wavelengths < 10 nm. Superior performance, which requires uniform layers and smooth interfaces, and high stability of the layered structure under thermal loadings are some of the demands in practical applications. Previous studies however show that the Ru layers in the 2 nm period Ru/C multilayer agglomerate upon moderate annealing, and the layered structure is no longer retained. This agglomeration and crystallization of the Ru layers upon annealing to form almost spherical crystallites is a result of the reduction of surface or interfacial energy from die amorphous high energy non-equilibrium state of the as-prepared sample dirough diffusive arrangements of the atoms. Proposed models for mechanism of thin film agglomeration include one analogous to Rayleigh instability, and grain boundary grooving in polycrystalline films. These models however are not necessarily appropriate to explain for the agglomeration in the sub-nanometer amorphous Ru layers in Ru/C multilayers. The Ru-C phase diagram shows a wide miscible gap, which indicates the preference of phase separation between these two materials and provides an additional driving force for agglomeration. In this paper, we study the evolution of the microstructures and layered structure via in-situ Transmission Electron Microscopy (TEM), and attempt to determine the order of occurence of agglomeration and crystallization in the Ru layers by observing the diffraction patterns.


Author(s):  
D. Loretto ◽  
J. M. Gibson ◽  
S. M. Yalisove

The silicides CoSi2 and NiSi2 are both metallic with the fee flourite structure and lattice constants which are close to silicon (1.2% and 0.6% smaller at room temperature respectively) Consequently epitaxial cobalt and nickel disilicide can be grown on silicon. If these layers are formed by ultra high vacuum (UHV) deposition (also known as molecular beam epitaxy or MBE) their thickness can be controlled to within a few monolayers. Such ultrathin metal/silicon systems have many potential applications: for example electronic devices based on ballistic transport. They also provide a model system to study the properties of heterointerfaces. In this work we will discuss results obtained using in situ and ex situ transmission electron microscopy (TEM).In situ TEM is suited to the study of MBE growth for several reasons. It offers high spatial resolution and the ability to penetrate many monolayers of material. This is in contrast to the techniques which are usually employed for in situ measurements in MBE, for example low energy electron diffraction (LEED) and reflection high energy electron diffraction (RHEED), which are both sensitive to only a few monolayers at the surface.


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